KR20010107764A - 박막 트랜지스터 제조 방법 - Google Patents

박막 트랜지스터 제조 방법 Download PDF

Info

Publication number
KR20010107764A
KR20010107764A KR1020010029012A KR20010029012A KR20010107764A KR 20010107764 A KR20010107764 A KR 20010107764A KR 1020010029012 A KR1020010029012 A KR 1020010029012A KR 20010029012 A KR20010029012 A KR 20010029012A KR 20010107764 A KR20010107764 A KR 20010107764A
Authority
KR
South Korea
Prior art keywords
thin film
semiconductor thin
protective film
forming
particle size
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020010029012A
Other languages
English (en)
Korean (ko)
Inventor
타카토쿠마코토
Original Assignee
이데이 노부유끼
소니 가부시끼 가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이데이 노부유끼, 소니 가부시끼 가이샤 filed Critical 이데이 노부유끼
Publication of KR20010107764A publication Critical patent/KR20010107764A/ko
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nonlinear Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Recrystallisation Techniques (AREA)
  • Weting (AREA)
KR1020010029012A 2000-05-25 2001-05-25 박막 트랜지스터 제조 방법 Ceased KR20010107764A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000-154049 2000-05-25
JP2000154049A JP2001332741A (ja) 2000-05-25 2000-05-25 薄膜トランジスタの製造方法

Publications (1)

Publication Number Publication Date
KR20010107764A true KR20010107764A (ko) 2001-12-07

Family

ID=18659203

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020010029012A Ceased KR20010107764A (ko) 2000-05-25 2001-05-25 박막 트랜지스터 제조 방법

Country Status (4)

Country Link
US (3) US6599783B2 (enExample)
JP (1) JP2001332741A (enExample)
KR (1) KR20010107764A (enExample)
TW (1) TW519764B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100466628B1 (ko) * 2002-11-12 2005-01-15 삼성에스디아이 주식회사 평판표시장치 및 그의 제조방법
KR101510212B1 (ko) * 2008-06-05 2015-04-10 삼성전자주식회사 산화물 반도체 박막 트랜지스터의 제조방법

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002076352A (ja) * 2000-08-31 2002-03-15 Semiconductor Energy Lab Co Ltd 表示装置及びその作製方法
TW525402B (en) 2001-01-18 2003-03-21 Semiconductor Energy Lab Process for producing a light emitting device
KR100766493B1 (ko) * 2001-02-12 2007-10-15 삼성전자주식회사 박막트랜지스터 액정표시장치
SG143944A1 (en) 2001-02-19 2008-07-29 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
US6720198B2 (en) * 2001-02-19 2004-04-13 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method thereof
KR100437475B1 (ko) * 2001-04-13 2004-06-23 삼성에스디아이 주식회사 평판 디스플레이 장치용 표시 소자 제조 방법
US7211828B2 (en) 2001-06-20 2007-05-01 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic apparatus
TW548860B (en) 2001-06-20 2003-08-21 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
JP2003168645A (ja) * 2001-12-03 2003-06-13 Hitachi Ltd 半導体薄膜装置、その製造方法及び画像表示装置
TW200302511A (en) 2002-01-28 2003-08-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
US7749818B2 (en) 2002-01-28 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
TWI261358B (en) * 2002-01-28 2006-09-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
KR100979926B1 (ko) * 2002-03-05 2010-09-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체소자 및 그것을 사용한 반도체장치
US7579771B2 (en) 2002-04-23 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
US7786496B2 (en) * 2002-04-24 2010-08-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing same
JP2003317971A (ja) * 2002-04-26 2003-11-07 Semiconductor Energy Lab Co Ltd 発光装置およびその作製方法
US7303945B2 (en) 2002-06-06 2007-12-04 Nec Corporation Method for forming pattern of stacked film and thin film transistor
US6933241B2 (en) 2002-06-06 2005-08-23 Nec Corporation Method for forming pattern of stacked film
US7897979B2 (en) 2002-06-07 2011-03-01 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method thereof
US7230271B2 (en) 2002-06-11 2007-06-12 Semiconductor Energy Laboratory Co., Ltd. Light emitting device comprising film having hygroscopic property and transparency and manufacturing method thereof
JP4216008B2 (ja) * 2002-06-27 2009-01-28 株式会社半導体エネルギー研究所 発光装置およびその作製方法、ならびに前記発光装置を有するビデオカメラ、デジタルカメラ、ゴーグル型ディスプレイ、カーナビゲーション、パーソナルコンピュータ、ｄｖｄプレーヤー、電子遊技機器、または携帯情報端末
SG130013A1 (en) * 2002-07-25 2007-03-20 Semiconductor Energy Lab Method of fabricating light emitting device
CN100466285C (zh) * 2002-09-11 2009-03-04 株式会社半导体能源研究所 发光装置及其制造方法
JP4373086B2 (ja) 2002-12-27 2009-11-25 株式会社半導体エネルギー研究所 発光装置
US7202504B2 (en) 2004-05-20 2007-04-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element and display device
US7112455B2 (en) 2004-06-10 2006-09-26 Freescale Semiconductor, Inc Semiconductor optical devices and method for forming
US20070054429A1 (en) * 2005-08-25 2007-03-08 Tsuan-Lun Lung Back panel manufacturing process
US7675078B2 (en) * 2005-09-14 2010-03-09 Chunghwa Picture Tubes, Ltd. Pixel structure
JP5208591B2 (ja) 2007-06-28 2013-06-12 株式会社半導体エネルギー研究所 発光装置、及び照明装置
JP2009206508A (ja) * 2008-01-31 2009-09-10 Canon Inc 薄膜トランジスタ及び表示装置
KR101352237B1 (ko) * 2008-08-13 2014-01-16 엘지디스플레이 주식회사 유기전계발광표시장치의 제조방법
KR20110090408A (ko) * 2010-02-03 2011-08-10 삼성전자주식회사 박막 형성 방법, 표시판용 금속 배선 및 이를 포함하는 박막 트랜지스터 표시판 및 그 제조 방법
TWI588910B (zh) * 2011-11-30 2017-06-21 半導體能源研究所股份有限公司 半導體裝置的製造方法
JP6190192B2 (ja) * 2013-07-16 2017-08-30 ソニーセミコンダクタソリューションズ株式会社 放射線撮像装置および放射線撮像表示システム
KR20150137214A (ko) * 2014-05-28 2015-12-09 삼성디스플레이 주식회사 유기발광 디스플레이 장치 및 그 제조방법
KR102716494B1 (ko) * 2016-03-18 2024-10-14 삼성디스플레이 주식회사 박막트랜지스터와 제조 방법, 및 이를 포함하는 유기 발광 표시 장치
CN109585566B (zh) * 2018-11-14 2021-05-18 惠科股份有限公司 一种阵列基板、阵列基板的制作方法和显示面板

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3035451B2 (ja) * 1994-07-19 2000-04-24 大日本スクリーン製造株式会社 基板の表面処理装置
JPH08153699A (ja) * 1994-09-16 1996-06-11 Semiconductor Energy Lab Co Ltd 薄膜半導体装置の作製方法
EP0801427A3 (en) * 1996-04-11 1999-05-06 Matsushita Electric Industrial Co., Ltd. Field effect transistor, semiconductor storage device, method of manufacturing the same and method of driving semiconductor storage device
JP3463971B2 (ja) * 1996-12-26 2003-11-05 出光興産株式会社 有機アクティブｅｌ発光装置
JP3976828B2 (ja) * 1997-02-17 2007-09-19 株式会社半導体エネルギー研究所 結晶性珪素膜の作製方法
US6392720B1 (en) * 1998-12-17 2002-05-21 Lg Electronics, Inc. Substrate structure of a liquid crystal display and a manufacturing method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100466628B1 (ko) * 2002-11-12 2005-01-15 삼성에스디아이 주식회사 평판표시장치 및 그의 제조방법
KR101510212B1 (ko) * 2008-06-05 2015-04-10 삼성전자주식회사 산화물 반도체 박막 트랜지스터의 제조방법

Also Published As

Publication number Publication date
TW519764B (en) 2003-02-01
JP2001332741A (ja) 2001-11-30
US20020066902A1 (en) 2002-06-06
US20030211667A1 (en) 2003-11-13
US6599783B2 (en) 2003-07-29
US20030211668A1 (en) 2003-11-13

Similar Documents

Publication Publication Date Title
KR20010107764A (ko) 박막 트랜지스터 제조 방법
KR101451103B1 (ko) 박막 반도체장치의 제조방법
JP4084080B2 (ja) 薄膜トランジスタ基板の製造方法
KR100402845B1 (ko) 액정표시장치의제조방법
KR19980081122A (ko) 박막트랜지스터 및 그 제조방법과그것을 사용한 액정표시장치
JP2000299465A (ja) 薄膜トランジスタ及びその製造方法と表示装置
KR100585873B1 (ko) 폴리실리콘 액정표시소자 및 그 제조방법
JP4234363B2 (ja) 薄膜トランジスタ装置及びその製造方法、並びにそれを備えた薄膜トランジスタ基板及び表示装置
KR19980084468A (ko) 박막트랜지스터의 제조방법
KR20040013273A (ko) 박막 트랜지스터 및 그 제조방법
KR100500068B1 (ko) 보텀 게이트형 박막 트랜지스터 및 그 제조 방법
KR100652216B1 (ko) 폴리실리콘 액정표시소자 제조 방법
KR101599280B1 (ko) 어레이 기판의 제조방법
KR100498629B1 (ko) 액정표시장치의제조방법
KR20060060795A (ko) 박막 트랜지스터 및 디스플레이 픽셀 제조방법
JP2002190604A (ja) 薄膜トランジスタおよびそれを用いた液晶表示装置とエレクトロルミネッセンス表示装置
JP4160174B2 (ja) 半導体装置
JP2001274413A (ja) 薄膜トランジスタの製造方法
JPH10189499A (ja) 半導体装置の製造方法
JP2001036097A (ja) 半導体装置
JP2000004021A (ja) 薄膜トランジスタおよび液晶表示装置用アクティブマトリックスアレイとそれらの製造方法
KR100923054B1 (ko) 디스플레이 픽셀 및 이의 제조 방법
KR20020064123A (ko) 저온 다결정 실리콘형 박막 트랜지스터 제조 방법
KR20050099025A (ko) 유기 전계 발광 표시 장치용 박막 트랜지스터 및 그를사용하는 유기 전계 발광 표시 장치
JPH07131021A (ja) 半導体装置およびその作製方法

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20010525

PG1501 Laying open of application
A201 Request for examination
AMND Amendment
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20060525

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 20010525

Comment text: Patent Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20070411

Patent event code: PE09021S01D

AMND Amendment
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20071107

Patent event code: PE09021S01D

AMND Amendment
E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20080711

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20071107

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

Patent event date: 20070411

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

J201 Request for trial against refusal decision
PJ0201 Trial against decision of rejection

Patent event date: 20081013

Comment text: Request for Trial against Decision on Refusal

Patent event code: PJ02012R01D

Patent event date: 20080711

Comment text: Decision to Refuse Application

Patent event code: PJ02011S01I

Appeal kind category: Appeal against decision to decline refusal

Decision date: 20100225

Appeal identifier: 2008101010611

Request date: 20081013

AMND Amendment
PB0901 Examination by re-examination before a trial

Comment text: Amendment to Specification, etc.

Patent event date: 20081112

Patent event code: PB09011R02I

Comment text: Request for Trial against Decision on Refusal

Patent event date: 20081013

Patent event code: PB09011R01I

Comment text: Amendment to Specification, etc.

Patent event date: 20080307

Patent event code: PB09011R02I

Comment text: Amendment to Specification, etc.

Patent event date: 20070711

Patent event code: PB09011R02I

Comment text: Amendment to Specification, etc.

Patent event date: 20060525

Patent event code: PB09011R02I

B601 Maintenance of original decision after re-examination before a trial
PB0601 Maintenance of original decision after re-examination before a trial

Comment text: Report of Result of Re-examination before a Trial

Patent event code: PB06011S01D

Patent event date: 20081212

J301 Trial decision

Free format text: TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20081013

Effective date: 20100225

PJ1301 Trial decision

Patent event code: PJ13011S01D

Patent event date: 20100225

Comment text: Trial Decision on Objection to Decision on Refusal

Appeal kind category: Appeal against decision to decline refusal

Request date: 20081013

Decision date: 20100225

Appeal identifier: 2008101010611