JP2001320131A - 多波長半導体レーザ素子アレイ及びその作製方法 - Google Patents

多波長半導体レーザ素子アレイ及びその作製方法

Info

Publication number
JP2001320131A
JP2001320131A JP2000132628A JP2000132628A JP2001320131A JP 2001320131 A JP2001320131 A JP 2001320131A JP 2000132628 A JP2000132628 A JP 2000132628A JP 2000132628 A JP2000132628 A JP 2000132628A JP 2001320131 A JP2001320131 A JP 2001320131A
Authority
JP
Japan
Prior art keywords
semiconductor laser
laser device
face
emission end
wavelength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000132628A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001320131A5 (enExample
Inventor
Kenichi Kikuchi
健一 菊地
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2000132628A priority Critical patent/JP2001320131A/ja
Priority to US09/795,383 priority patent/US6522678B2/en
Publication of JP2001320131A publication Critical patent/JP2001320131A/ja
Publication of JP2001320131A5 publication Critical patent/JP2001320131A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287—Facet reflectivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Head (AREA)
JP2000132628A 2000-03-01 2000-05-01 多波長半導体レーザ素子アレイ及びその作製方法 Pending JP2001320131A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000132628A JP2001320131A (ja) 2000-03-01 2000-05-01 多波長半導体レーザ素子アレイ及びその作製方法
US09/795,383 US6522678B2 (en) 2000-03-01 2001-02-28 Multiple wavelength semiconductor laser device array and production method

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000-56223 2000-03-01
JP2000056223 2000-03-01
JP2000132628A JP2001320131A (ja) 2000-03-01 2000-05-01 多波長半導体レーザ素子アレイ及びその作製方法

Publications (2)

Publication Number Publication Date
JP2001320131A true JP2001320131A (ja) 2001-11-16
JP2001320131A5 JP2001320131A5 (enExample) 2007-01-25

Family

ID=26586545

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000132628A Pending JP2001320131A (ja) 2000-03-01 2000-05-01 多波長半導体レーザ素子アレイ及びその作製方法

Country Status (2)

Country Link
US (1) US6522678B2 (enExample)
JP (1) JP2001320131A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005142216A (ja) * 2003-11-04 2005-06-02 Sharp Corp 半導体レーザ素子の測定方法および測定装置
JP2009224480A (ja) * 2008-03-14 2009-10-01 Panasonic Corp ２波長半導体レーザ装置
JP2021132088A (ja) * 2020-02-19 2021-09-09 ウシオ電機株式会社 半導体レーザ装置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000011417A (ja) * 1998-06-26 2000-01-14 Toshiba Corp 半導体レーザアレイ及びその製造方法、光集積ユニット、光ピックアップ並びに光ディスク駆動装置
JP2006310413A (ja) * 2005-04-26 2006-11-09 Matsushita Electric Ind Co Ltd 半導体レーザ装置
DE102016103358A1 (de) * 2016-02-25 2017-08-31 Osram Opto Semiconductors Gmbh Laserbarren mit gräben

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05102613A (ja) * 1991-10-09 1993-04-23 Fuji Xerox Co Ltd 多波長半導体レーザ装置
JPH07170016A (ja) * 1993-10-08 1995-07-04 Hewlett Packard Co <Hp> 同調可能な外部空洞型レーザの出力特性を最適化するための方法と装置
JPH11186656A (ja) * 1997-12-22 1999-07-09 Victor Co Of Japan Ltd 半導体レーザ素子用反射膜及びその製造方法
JP2000011417A (ja) * 1998-06-26 2000-01-14 Toshiba Corp 半導体レーザアレイ及びその製造方法、光集積ユニット、光ピックアップ並びに光ディスク駆動装置
JP2001230495A (ja) * 2000-02-17 2001-08-24 Sharp Corp 半導体レーザ素子

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4993036A (en) * 1988-09-28 1991-02-12 Canon Kabushiki Kaisha Semiconductor laser array including lasers with reflecting means having different wavelength selection properties

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05102613A (ja) * 1991-10-09 1993-04-23 Fuji Xerox Co Ltd 多波長半導体レーザ装置
JPH07170016A (ja) * 1993-10-08 1995-07-04 Hewlett Packard Co <Hp> 同調可能な外部空洞型レーザの出力特性を最適化するための方法と装置
JPH11186656A (ja) * 1997-12-22 1999-07-09 Victor Co Of Japan Ltd 半導体レーザ素子用反射膜及びその製造方法
JP2000011417A (ja) * 1998-06-26 2000-01-14 Toshiba Corp 半導体レーザアレイ及びその製造方法、光集積ユニット、光ピックアップ並びに光ディスク駆動装置
JP2001230495A (ja) * 2000-02-17 2001-08-24 Sharp Corp 半導体レーザ素子

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005142216A (ja) * 2003-11-04 2005-06-02 Sharp Corp 半導体レーザ素子の測定方法および測定装置
JP2009224480A (ja) * 2008-03-14 2009-10-01 Panasonic Corp ２波長半導体レーザ装置
JP2021132088A (ja) * 2020-02-19 2021-09-09 ウシオ電機株式会社 半導体レーザ装置
JP7371522B2 (ja) 2020-02-19 2023-10-31 ウシオ電機株式会社 半導体レーザ装置

Also Published As

Publication number Publication date
US6522678B2 (en) 2003-02-18
US20010040906A1 (en) 2001-11-15

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