JP2001320131A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2001320131A5 JP2001320131A5 JP2000132628A JP2000132628A JP2001320131A5 JP 2001320131 A5 JP2001320131 A5 JP 2001320131A5 JP 2000132628 A JP2000132628 A JP 2000132628A JP 2000132628 A JP2000132628 A JP 2000132628A JP 2001320131 A5 JP2001320131 A5 JP 2001320131A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- laser device
- face
- wavelength
- reflectance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 description 46
- 150000001875 compounds Chemical class 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000132628A JP2001320131A (ja) | 2000-03-01 | 2000-05-01 | 多波長半導体レーザ素子アレイ及びその作製方法 |
| US09/795,383 US6522678B2 (en) | 2000-03-01 | 2001-02-28 | Multiple wavelength semiconductor laser device array and production method |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000-56223 | 2000-03-01 | ||
| JP2000056223 | 2000-03-01 | ||
| JP2000132628A JP2001320131A (ja) | 2000-03-01 | 2000-05-01 | 多波長半導体レーザ素子アレイ及びその作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001320131A JP2001320131A (ja) | 2001-11-16 |
| JP2001320131A5 true JP2001320131A5 (enExample) | 2007-01-25 |
Family
ID=26586545
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000132628A Pending JP2001320131A (ja) | 2000-03-01 | 2000-05-01 | 多波長半導体レーザ素子アレイ及びその作製方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6522678B2 (enExample) |
| JP (1) | JP2001320131A (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000011417A (ja) * | 1998-06-26 | 2000-01-14 | Toshiba Corp | 半導体レーザアレイ及びその製造方法、光集積ユニット、光ピックアップ並びに光ディスク駆動装置 |
| JP4564736B2 (ja) * | 2003-11-04 | 2010-10-20 | シャープ株式会社 | 半導体レーザ素子の測定方法および測定装置 |
| JP2006310413A (ja) * | 2005-04-26 | 2006-11-09 | Matsushita Electric Ind Co Ltd | 半導体レーザ装置 |
| JP2009224480A (ja) * | 2008-03-14 | 2009-10-01 | Panasonic Corp | ２波長半導体レーザ装置 |
| DE102016103358A1 (de) * | 2016-02-25 | 2017-08-31 | Osram Opto Semiconductors Gmbh | Laserbarren mit gräben |
| JP7371522B2 (ja) * | 2020-02-19 | 2023-10-31 | ウシオ電機株式会社 | 半導体レーザ装置 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4993036A (en) * | 1988-09-28 | 1991-02-12 | Canon Kabushiki Kaisha | Semiconductor laser array including lasers with reflecting means having different wavelength selection properties |
| JPH05102613A (ja) * | 1991-10-09 | 1993-04-23 | Fuji Xerox Co Ltd | 多波長半導体レーザ装置 |
| US5434874A (en) * | 1993-10-08 | 1995-07-18 | Hewlett-Packard Company | Method and apparatus for optimizing output characteristics of a tunable external cavity laser |
| JPH11186656A (ja) * | 1997-12-22 | 1999-07-09 | Victor Co Of Japan Ltd | 半導体レーザ素子用反射膜及びその製造方法 |
| JP2000011417A (ja) * | 1998-06-26 | 2000-01-14 | Toshiba Corp | 半導体レーザアレイ及びその製造方法、光集積ユニット、光ピックアップ並びに光ディスク駆動装置 |
| JP3642711B2 (ja) * | 2000-02-17 | 2005-04-27 | シャープ株式会社 | 半導体レーザ素子 |
-
2000
- 2000-05-01 JP JP2000132628A patent/JP2001320131A/ja active Pending
-
2001
- 2001-02-28 US US09/795,383 patent/US6522678B2/en not_active Expired - Lifetime
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP1072072B1 (en) | Surface-emitting optical device | |
| EP0361399A2 (en) | Semmiconductor laser array including lasers with reflecting means having different wavelength selection properties | |
| US7230962B2 (en) | Semiconductor laser device | |
| JP5190115B2 (ja) | 多重キャビティエッチファセットｄｆｂレーザ | |
| JP2008085339A (ja) | 複数のモノリシックに集積されたレーザダイオードを備えている端面発光形半導体レーザ | |
| WO2007097411A1 (ja) | ２波長半導体発光装置及びその製造方法 | |
| JP2005514796A5 (enExample) | ||
| JP3547344B2 (ja) | 半導体発光素子 | |
| JPH0687512B2 (ja) | 選択的エピタクシー法に依る表面放出型ＡｌＧａＡｓ／ＧａＡｓ半導体レーザーダイオードの製造方法 | |
| JP2001085793A (ja) | 半導体レーザ装置 | |
| JP2001320131A5 (enExample) | ||
| US20060176924A1 (en) | Semiconductor light emitting device having effective cooling structure and method of manufacturing the same | |
| WO1999018640A1 (en) | Surface light emitting laser and method of production thereof | |
| US7672353B2 (en) | Semiconductor laser device and method for its production | |
| US20020185653A1 (en) | Semiconductor light-emitting device | |
| CA2132986C (en) | Semiconductor optical devices and techniques | |
| JP2002026442A (ja) | 半導体レーザ | |
| CN100559672C (zh) | 多波长激光二极管 | |
| CN101902012B (zh) | 半导体激光装置 | |
| JP2002231704A5 (enExample) | ||
| US7492802B2 (en) | End pumping vertical external cavity surface emitting laser apparatus | |
| JP2645871B2 (ja) | 多波長半導体レーザ装置 | |
| JPH05102613A (ja) | 多波長半導体レーザ装置 | |
| JP4701832B2 (ja) | 半導体レーザ素子 | |
| JP2004014725A (ja) | 半導体発光素子 |