JP2002231704A5 - - Google Patents

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Publication number
JP2002231704A5
JP2002231704A5 JP2001355467A JP2001355467A JP2002231704A5 JP 2002231704 A5 JP2002231704 A5 JP 2002231704A5 JP 2001355467 A JP2001355467 A JP 2001355467A JP 2001355467 A JP2001355467 A JP 2001355467A JP 2002231704 A5 JP2002231704 A5 JP 2002231704A5
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JP
Japan
Prior art keywords
layer
semiconductor
etching
etching stop
emitting device
Prior art date
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Application number
JP2001355467A
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English (en)
Japanese (ja)
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JP2002231704A (ja
JP3464991B2 (ja
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Priority to JP2001355467A priority Critical patent/JP3464991B2/ja
Priority claimed from JP2001355467A external-priority patent/JP3464991B2/ja
Publication of JP2002231704A publication Critical patent/JP2002231704A/ja
Application granted granted Critical
Publication of JP3464991B2 publication Critical patent/JP3464991B2/ja
Publication of JP2002231704A5 publication Critical patent/JP2002231704A5/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2001355467A 2000-11-28 2001-11-21 半導体レーザ発光装置の製造方法 Expired - Lifetime JP3464991B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001355467A JP3464991B2 (ja) 2000-11-28 2001-11-21 半導体レーザ発光装置の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000-360615 2000-11-28
JP2000360615 2000-11-28
JP2001355467A JP3464991B2 (ja) 2000-11-28 2001-11-21 半導体レーザ発光装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2003282207A Division JP2004006969A (ja) 2000-11-28 2003-07-29 半導体レーザ発光装置の製造方法

Publications (3)

Publication Number Publication Date
JP2002231704A JP2002231704A (ja) 2002-08-16
JP3464991B2 JP3464991B2 (ja) 2003-11-10
JP2002231704A5 true JP2002231704A5 (enExample) 2004-08-12

Family

ID=26604682

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001355467A Expired - Lifetime JP3464991B2 (ja) 2000-11-28 2001-11-21 半導体レーザ発光装置の製造方法

Country Status (1)

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JP (1) JP3464991B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4680015B2 (ja) * 2005-09-09 2011-05-11 シャープ株式会社 窒化物半導体レーザ素子およびその製造方法
JP2007110049A (ja) * 2005-10-17 2007-04-26 Rohm Co Ltd 半導体発光素子
JP5131817B2 (ja) * 2007-04-20 2013-01-30 シャープ株式会社 半導体装置、その製造方法、およびそれに用いる製造装置
US10304749B2 (en) * 2017-06-20 2019-05-28 Intel Corporation Method and apparatus for improved etch stop layer or hard mask layer of a memory device
JP7560540B2 (ja) * 2020-03-19 2024-10-02 パナソニックホールディングス株式会社 半導体レーザ素子

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6503769B2 (en) 1998-10-26 2003-01-07 Matsushita Electronics Corporation Semiconductor device and method for fabricating the same

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