JP3464991B2 - 半導体レーザ発光装置の製造方法 - Google Patents

半導体レーザ発光装置の製造方法

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Publication number
JP3464991B2
JP3464991B2 JP2001355467A JP2001355467A JP3464991B2 JP 3464991 B2 JP3464991 B2 JP 3464991B2 JP 2001355467 A JP2001355467 A JP 2001355467A JP 2001355467 A JP2001355467 A JP 2001355467A JP 3464991 B2 JP3464991 B2 JP 3464991B2
Authority
JP
Japan
Prior art keywords
layer
etching
type
semiconductor
stop layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2001355467A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002231704A5 (enExample
JP2002231704A (ja
Inventor
義晃 長谷川
岳 菅原
良子 宮永
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Panasonic Corp
Priority to JP2001355467A priority Critical patent/JP3464991B2/ja
Publication of JP2002231704A publication Critical patent/JP2002231704A/ja
Application granted granted Critical
Publication of JP3464991B2 publication Critical patent/JP3464991B2/ja
Publication of JP2002231704A5 publication Critical patent/JP2002231704A5/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
JP2001355467A 2000-11-28 2001-11-21 半導体レーザ発光装置の製造方法 Expired - Lifetime JP3464991B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001355467A JP3464991B2 (ja) 2000-11-28 2001-11-21 半導体レーザ発光装置の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000360615 2000-11-28
JP2000-360615 2000-11-28
JP2001355467A JP3464991B2 (ja) 2000-11-28 2001-11-21 半導体レーザ発光装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2003282207A Division JP2004006969A (ja) 2000-11-28 2003-07-29 半導体レーザ発光装置の製造方法

Publications (3)

Publication Number Publication Date
JP2002231704A JP2002231704A (ja) 2002-08-16
JP3464991B2 true JP3464991B2 (ja) 2003-11-10
JP2002231704A5 JP2002231704A5 (enExample) 2004-08-12

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001355467A Expired - Lifetime JP3464991B2 (ja) 2000-11-28 2001-11-21 半導体レーザ発光装置の製造方法

Country Status (1)

Country Link
JP (1) JP3464991B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4680015B2 (ja) * 2005-09-09 2011-05-11 シャープ株式会社 窒化物半導体レーザ素子およびその製造方法
JP2007110049A (ja) * 2005-10-17 2007-04-26 Rohm Co Ltd 半導体発光素子
JP5131817B2 (ja) * 2007-04-20 2013-01-30 シャープ株式会社 半導体装置、その製造方法、およびそれに用いる製造装置
US10304749B2 (en) * 2017-06-20 2019-05-28 Intel Corporation Method and apparatus for improved etch stop layer or hard mask layer of a memory device
CN115298918A (zh) * 2020-03-19 2022-11-04 松下控股株式会社 半导体激光元件

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000200946A (ja) 1998-10-26 2000-07-18 Matsushita Electronics Industry Corp 半導体装置およびその製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000200946A (ja) 1998-10-26 2000-07-18 Matsushita Electronics Industry Corp 半導体装置およびその製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Ｊ．Ｙ．Ｃｈｅｎ，Ｃ．Ｊ．Ｐａｎ，Ｇ．Ｃ．Ｃｈｉ，Ｅｌｅｃｔｒｉｃａｌ ａｎｄ Ｏｐｔｉｃａｌ ｃｈａｎｇｅｓ ｉｎ ｔｈｅ ｎｅａｒ ｓｕｒｒｆａｃｅ ｏｆ ｒｅａｃｔｉｖｅｌｙ ｉｏｎ ｅｔｃｈｅｄ ｎ−ＧａＮ，Ｓｏｌｉｄ−Ｓｔａｔｅ Ｅｌｅｃｔｒｏｎｉｃｓ，１９９９年，４３，６４９−６５２

Also Published As

Publication number Publication date
JP2002231704A (ja) 2002-08-16

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