JP2001274094A5 - - Google Patents

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Publication number
JP2001274094A5
JP2001274094A5 JP2000084590A JP2000084590A JP2001274094A5 JP 2001274094 A5 JP2001274094 A5 JP 2001274094A5 JP 2000084590 A JP2000084590 A JP 2000084590A JP 2000084590 A JP2000084590 A JP 2000084590A JP 2001274094 A5 JP2001274094 A5 JP 2001274094A5
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JP
Japan
Prior art keywords
susceptor
substrate
processed
processing apparatus
substrate processing
Prior art date
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Granted
Application number
JP2000084590A
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English (en)
Japanese (ja)
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JP4203206B2 (ja
JP2001274094A (ja
Filing date
Publication date
Priority claimed from JP2000084590A external-priority patent/JP4203206B2/ja
Priority to JP2000084590A priority Critical patent/JP4203206B2/ja
Application filed filed Critical
Priority to TW090106943A priority patent/TW522474B/zh
Priority to US09/816,643 priority patent/US20020017363A1/en
Priority to KR10-2001-0015052A priority patent/KR100491680B1/ko
Publication of JP2001274094A publication Critical patent/JP2001274094A/ja
Publication of JP2001274094A5 publication Critical patent/JP2001274094A5/ja
Priority to US11/258,670 priority patent/US20060075972A1/en
Publication of JP4203206B2 publication Critical patent/JP4203206B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2000084590A 2000-03-24 2000-03-24 基板処理装置 Expired - Lifetime JP4203206B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2000084590A JP4203206B2 (ja) 2000-03-24 2000-03-24 基板処理装置
TW090106943A TW522474B (en) 2000-03-24 2001-03-23 A substrate processing apparatus with the same
US09/816,643 US20020017363A1 (en) 2000-03-24 2001-03-23 Substrate processing apparatus and substrate processing method
KR10-2001-0015052A KR100491680B1 (ko) 2000-03-24 2001-03-23 기판 처리 장치 및 기판 처리 방법
US11/258,670 US20060075972A1 (en) 2000-03-24 2005-10-25 Substrate processing apparatus and substrate processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000084590A JP4203206B2 (ja) 2000-03-24 2000-03-24 基板処理装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006232974A Division JP2006344997A (ja) 2006-08-30 2006-08-30 基板処理装置および基板処理方法

Publications (3)

Publication Number Publication Date
JP2001274094A JP2001274094A (ja) 2001-10-05
JP2001274094A5 true JP2001274094A5 (cg-RX-API-DMAC10.html) 2005-09-15
JP4203206B2 JP4203206B2 (ja) 2008-12-24

Family

ID=18601049

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000084590A Expired - Lifetime JP4203206B2 (ja) 2000-03-24 2000-03-24 基板処理装置

Country Status (4)

Country Link
US (2) US20020017363A1 (cg-RX-API-DMAC10.html)
JP (1) JP4203206B2 (cg-RX-API-DMAC10.html)
KR (1) KR100491680B1 (cg-RX-API-DMAC10.html)
TW (1) TW522474B (cg-RX-API-DMAC10.html)

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TWI327339B (en) * 2005-07-29 2010-07-11 Nuflare Technology Inc Vapor phase growing apparatus and vapor phase growing method
TWI354320B (en) * 2006-02-21 2011-12-11 Nuflare Technology Inc Vopor phase deposition apparatus and support table
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JP5358436B2 (ja) * 2007-07-11 2013-12-04 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置
KR101419389B1 (ko) * 2007-07-25 2014-07-21 주성엔지니어링(주) 기판 지지 어셈블리 및 이를 포함하는 기판 처리 장치
KR100902619B1 (ko) * 2007-08-29 2009-06-11 세메스 주식회사 기판 처리장치 및 그 방법
JP5038073B2 (ja) * 2007-09-11 2012-10-03 株式会社ニューフレアテクノロジー 半導体製造装置および半導体製造方法
JP5283370B2 (ja) * 2007-11-29 2013-09-04 株式会社ニューフレアテクノロジー 気相成長装置および気相成長方法
CN101919041B (zh) * 2008-01-16 2013-03-27 索绍股份有限公司 衬底固持器，衬底支撑设备，衬底处理设备以及使用所述衬底处理设备的衬底处理方法
KR100943427B1 (ko) * 2008-02-04 2010-02-19 주식회사 유진테크 기판지지유닛 및 기판처리장치, 그리고 기판지지유닛을제조하는 방법
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JP2009270143A (ja) * 2008-05-02 2009-11-19 Nuflare Technology Inc サセプタ、半導体製造装置及び半導体製造方法
US9099513B2 (en) * 2008-09-08 2015-08-04 Shibaura Mechatronics Corporation Substrate processing apparatus, and substrate processing method
JP5208850B2 (ja) * 2009-05-14 2013-06-12 株式会社ニューフレアテクノロジー 成膜装置
KR20100129566A (ko) * 2009-06-01 2010-12-09 주식회사 유진테크 기판지지유닛 및 이를 포함하는 기판처리장치
JP5275935B2 (ja) * 2009-07-15 2013-08-28 株式会社ニューフレアテクノロジー 半導体製造装置および半導体製造方法
JP5183659B2 (ja) * 2010-03-23 2013-04-17 東京エレクトロン株式会社 基板処理装置、基板処理方法、プログラム及びコンピュータ記憶媒体
JP5615102B2 (ja) * 2010-08-31 2014-10-29 株式会社ニューフレアテクノロジー 半導体製造方法及び半導体製造装置
US20120085747A1 (en) * 2010-10-07 2012-04-12 Benson Chao Heater assembly and wafer processing apparatus using the same
US9499905B2 (en) * 2011-07-22 2016-11-22 Applied Materials, Inc. Methods and apparatus for the deposition of materials on a substrate
US8956979B2 (en) 2011-11-17 2015-02-17 Skyworks Solutions, Inc. Systems and methods for improving front-side process uniformity by back-side metallization
KR101312592B1 (ko) * 2012-04-10 2013-09-30 주식회사 유진테크 히터 승강형 기판 처리 장치
WO2014038667A1 (ja) * 2012-09-06 2014-03-13 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及び記録媒体
KR101440307B1 (ko) * 2012-09-17 2014-09-18 주식회사 유진테크 기판처리장치
JP6131162B2 (ja) 2012-11-08 2017-05-17 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
US10153185B2 (en) * 2013-03-14 2018-12-11 Applied Materials, Inc. Substrate temperature measurement in multi-zone heater
US20140263275A1 (en) * 2013-03-15 2014-09-18 Applied Materials, Inc. Rotation enabled multifunctional heater-chiller pedestal
JP6444641B2 (ja) * 2014-07-24 2018-12-26 株式会社ニューフレアテクノロジー 成膜装置、サセプタ、及び成膜方法
DE102014223301B8 (de) * 2014-11-14 2016-06-09 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Substrathalter, Plasmareaktor und Verfahren zur Abscheidung von Diamant
US10109510B2 (en) * 2014-12-18 2018-10-23 Varian Semiconductor Equipment Associates, Inc. Apparatus for improving temperature uniformity of a workpiece
KR102372555B1 (ko) * 2015-02-25 2022-03-08 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 히터 및 반도체 장치의 제조 방법
JP6622597B2 (ja) * 2016-01-12 2019-12-18 大陽日酸株式会社 気相成長装置
US20180033673A1 (en) * 2016-07-26 2018-02-01 Applied Materials, Inc. Substrate support with in situ wafer rotation
DE102017206671A1 (de) * 2017-04-20 2018-10-25 Siltronic Ag Suszeptor zum Halten einer Halbleiterscheibe mit Orientierungskerbe während des Abscheidens einer Schicht auf einer Vorderseite der Halbleiterscheibe und Verfahren zum Abscheiden der Schicht unter Verwendung des Suszeptors
KR20190067356A (ko) * 2017-12-07 2019-06-17 삼성전자주식회사 막 형성 장치
CN108677168B (zh) * 2018-07-05 2023-11-21 福建省福联集成电路有限公司 一种改善化学气相沉积加热均匀度的装置
US20220243325A1 (en) * 2019-02-05 2022-08-04 Veeco Instruments, Inc. Rotating Disk Reactor with Split Substrate Carrier
JP2021012944A (ja) * 2019-07-05 2021-02-04 東京エレクトロン株式会社 基板処理装置及び基板の受け渡し方法
CN111705302B (zh) * 2020-08-18 2020-11-10 上海陛通半导体能源科技股份有限公司 可实现晶圆平稳升降的气相沉积设备
KR102810675B1 (ko) * 2020-12-16 2025-05-23 주식회사 원익아이피에스 기판 처리 장치
US20250085056A1 (en) * 2023-09-07 2025-03-13 Applied Materials, Inc. Process chamber substrate transfer
WO2025085307A2 (en) * 2023-10-16 2025-04-24 Cvd Equipment Corporation Improvements in chemical vapor deposition systems

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US5421893A (en) * 1993-02-26 1995-06-06 Applied Materials, Inc. Susceptor drive and wafer displacement mechanism
JPH07111245A (ja) * 1993-10-12 1995-04-25 Fuji Electric Co Ltd 気相成長装置
US5421983A (en) * 1993-11-12 1995-06-06 E. I. Du Pont De Nemours And Company Anion selective electrodes containing fumed silica
US5653808A (en) * 1996-08-07 1997-08-05 Macleish; Joseph H. Gas injection system for CVD reactors
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US6007635A (en) * 1997-11-26 1999-12-28 Micro C Technologies, Inc. Platform for supporting a semiconductor substrate and method of supporting a substrate during rapid high temperature processing
US20010052392A1 (en) * 1998-02-25 2001-12-20 Masahiko Nakamura Multichamber substrate processing apparatus

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