JP2001274036A5 - - Google Patents
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- Publication number
- JP2001274036A5 JP2001274036A5 JP2000087872A JP2000087872A JP2001274036A5 JP 2001274036 A5 JP2001274036 A5 JP 2001274036A5 JP 2000087872 A JP2000087872 A JP 2000087872A JP 2000087872 A JP2000087872 A JP 2000087872A JP 2001274036 A5 JP2001274036 A5 JP 2001274036A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- wiring
- capacitor
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 claims description 78
- 239000000758 substrate Substances 0.000 claims description 76
- 238000004519 manufacturing process Methods 0.000 claims description 26
- 239000007787 solid Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 14
- 239000003989 dielectric material Substances 0.000 claims description 9
- 239000011347 resin Substances 0.000 claims description 6
- 229920005989 resin Polymers 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 92
- 239000010408 film Substances 0.000 description 58
- 229920001721 polyimide Polymers 0.000 description 27
- 239000004642 Polyimide Substances 0.000 description 19
- 229910052594 sapphire Inorganic materials 0.000 description 14
- 239000010980 sapphire Substances 0.000 description 14
- 239000009719 polyimide resin Substances 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 239000007864 aqueous solution Substances 0.000 description 6
- 239000002585 base Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 230000002378 acidificating effect Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 239000003513 alkali Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 238000003980 solgel method Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonium chloride Substances [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 238000013007 heat curing Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910010252 TiO3 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 239000011260 aqueous acid Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000087872A JP2001274036A (ja) | 2000-03-28 | 2000-03-28 | フィルム状コンデンサ及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000087872A JP2001274036A (ja) | 2000-03-28 | 2000-03-28 | フィルム状コンデンサ及びその製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005157429A Division JP4196351B2 (ja) | 2005-05-30 | 2005-05-30 | フィルム状コンデンサの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001274036A JP2001274036A (ja) | 2001-10-05 |
| JP2001274036A5 true JP2001274036A5 (enExample) | 2004-10-07 |
Family
ID=18603821
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000087872A Pending JP2001274036A (ja) | 2000-03-28 | 2000-03-28 | フィルム状コンデンサ及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001274036A (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3583396B2 (ja) | 2001-10-31 | 2004-11-04 | 富士通株式会社 | 半導体装置の製造方法、薄膜多層基板及びその製造方法 |
| WO2005069320A1 (ja) * | 2004-01-19 | 2005-07-28 | Murata Manufacturing Co., Ltd | 薄膜キャパシタ、該薄膜キャパシタの製造方法、及び電子装置の製造方法、並びに電子装置 |
| JP4614788B2 (ja) * | 2005-02-25 | 2011-01-19 | 京セラ株式会社 | 配線基板 |
| JP4613846B2 (ja) * | 2006-02-02 | 2011-01-19 | パナソニック株式会社 | 立体回路基板およびその製造方法 |
| US8134081B2 (en) | 2006-01-13 | 2012-03-13 | Panasonic Corporation | Three-dimensional circuit board and its manufacturing method |
| JP4613828B2 (ja) * | 2006-01-13 | 2011-01-19 | パナソニック株式会社 | 立体回路基板およびその製造方法 |
| JP2009252893A (ja) * | 2008-04-03 | 2009-10-29 | Elpida Memory Inc | 半導体装置 |
| JP6790771B2 (ja) * | 2016-12-01 | 2020-11-25 | 株式会社村田製作所 | コンデンサの実装構造 |
-
2000
- 2000-03-28 JP JP2000087872A patent/JP2001274036A/ja active Pending
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