JP2001271170A5 - - Google Patents

Download PDF

Info

Publication number
JP2001271170A5
JP2001271170A5 JP2000087474A JP2000087474A JP2001271170A5 JP 2001271170 A5 JP2001271170 A5 JP 2001271170A5 JP 2000087474 A JP2000087474 A JP 2000087474A JP 2000087474 A JP2000087474 A JP 2000087474A JP 2001271170 A5 JP2001271170 A5 JP 2001271170A5
Authority
JP
Japan
Prior art keywords
pulse amplitude
amplitude modulation
switch
switching
modulation circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000087474A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001271170A (ja
JP4592867B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2000087474A priority Critical patent/JP4592867B2/ja
Priority claimed from JP2000087474A external-priority patent/JP4592867B2/ja
Priority to US09/818,188 priority patent/US6675816B2/en
Publication of JP2001271170A publication Critical patent/JP2001271170A/ja
Priority to US10/752,520 priority patent/US7223446B2/en
Priority to US11/734,309 priority patent/US7569256B2/en
Publication of JP2001271170A5 publication Critical patent/JP2001271170A5/ja
Application granted granted Critical
Publication of JP4592867B2 publication Critical patent/JP4592867B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

JP2000087474A 2000-03-27 2000-03-27 平行平板形プラズマｃｖｄ装置及びドライクリーニングの方法 Expired - Fee Related JP4592867B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2000087474A JP4592867B2 (ja) 2000-03-27 2000-03-27 平行平板形プラズマｃｖｄ装置及びドライクリーニングの方法
US09/818,188 US6675816B2 (en) 2000-03-27 2001-03-26 Plasma CVD apparatus and dry cleaning method of the same
US10/752,520 US7223446B2 (en) 2000-03-27 2004-01-08 Plasma CVD apparatus and dry cleaning method of the same
US11/734,309 US7569256B2 (en) 2000-03-27 2007-04-12 Plasma CVD apparatus and dry cleaning method of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000087474A JP4592867B2 (ja) 2000-03-27 2000-03-27 平行平板形プラズマｃｖｄ装置及びドライクリーニングの方法

Publications (3)

Publication Number Publication Date
JP2001271170A JP2001271170A (ja) 2001-10-02
JP2001271170A5 true JP2001271170A5 (https=) 2007-05-24
JP4592867B2 JP4592867B2 (ja) 2010-12-08

Family

ID=18603479

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000087474A Expired - Fee Related JP4592867B2 (ja) 2000-03-27 2000-03-27 平行平板形プラズマｃｖｄ装置及びドライクリーニングの方法

Country Status (2)

Country Link
US (3) US6675816B2 (https=)
JP (1) JP4592867B2 (https=)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4592867B2 (ja) * 2000-03-27 2010-12-08 株式会社半導体エネルギー研究所 平行平板形プラズマｃｖｄ装置及びドライクリーニングの方法
WO2002061173A2 (en) * 2001-01-29 2002-08-08 The Board Of Regents For Oklahoma State University Advanced composite ormosil coatings
JP3702235B2 (ja) * 2002-03-11 2005-10-05 三菱重工業株式会社 シリコン堆積膜除去方法
US7067439B2 (en) 2002-06-14 2006-06-27 Applied Materials, Inc. ALD metal oxide deposition process using direct oxidation
TW200410337A (en) * 2002-12-02 2004-06-16 Au Optronics Corp Dry cleaning method for plasma reaction chamber
US7500445B2 (en) * 2003-01-27 2009-03-10 Applied Materials, Inc. Method and apparatus for cleaning a CVD chamber
US20050241762A1 (en) * 2004-04-30 2005-11-03 Applied Materials, Inc. Alternating asymmetrical plasma generation in a process chamber
US8119210B2 (en) * 2004-05-21 2012-02-21 Applied Materials, Inc. Formation of a silicon oxynitride layer on a high-k dielectric material
JP2008508166A (ja) * 2004-06-18 2008-03-21 リージェンツ・オブ・ザ・ユニヴァーシティー・オブ・ミネソタ 高周波プラズマを用いてナノ粒子を生成するための方法および装置
US20060000552A1 (en) * 2004-07-05 2006-01-05 Tokyo Electron Limited Plasma processing apparatus and cleaning method thereof
JP4758159B2 (ja) * 2005-07-19 2011-08-24 株式会社日立ハイテクノロジーズ プラズマエッチング装置および微粒子除去方法
JP4677612B2 (ja) * 2006-01-25 2011-04-27 独立行政法人産業技術総合研究所 炭素材料が被着した被処理物の清浄方法
US7678710B2 (en) * 2006-03-09 2010-03-16 Applied Materials, Inc. Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system
US7837838B2 (en) * 2006-03-09 2010-11-23 Applied Materials, Inc. Method of fabricating a high dielectric constant transistor gate using a low energy plasma apparatus
US7645710B2 (en) * 2006-03-09 2010-01-12 Applied Materials, Inc. Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system
JP4497323B2 (ja) * 2006-03-29 2010-07-07 三菱電機株式会社 プラズマｃｖｄ装置
US20070259111A1 (en) * 2006-05-05 2007-11-08 Singh Kaushal K Method and apparatus for photo-excitation of chemicals for atomic layer deposition of dielectric film
WO2008039845A2 (en) * 2006-09-26 2008-04-03 Applied Materials, Inc. Fluorine plasma treatment of high-k gate stack for defect passivation
US20090084987A1 (en) * 2007-09-28 2009-04-02 Varian Semiconductor Equipment Associates, Inc. Charge neutralization in a plasma processing apparatus
JP5211332B2 (ja) * 2008-07-01 2013-06-12 株式会社ユーテック プラズマｃｖｄ装置、ｄｌｃ膜及び薄膜の製造方法
US20100098875A1 (en) * 2008-10-17 2010-04-22 Andreas Fischer Pre-coating and wafer-less auto-cleaning system and method
JP5390846B2 (ja) 2008-12-09 2014-01-15 東京エレクトロン株式会社 プラズマエッチング装置及びプラズマクリーニング方法
US20100169289A1 (en) * 2008-12-30 2010-07-01 International Business Machines Corporation Two Phase Commit With Grid Elements
US8440061B2 (en) * 2009-07-20 2013-05-14 Lam Research Corporation System and method for plasma arc detection, isolation and prevention
US9275838B2 (en) * 2009-09-02 2016-03-01 Lam Research Corporation Arrangements for manipulating plasma confinement within a plasma processing system and methods thereof
US9401263B2 (en) * 2013-09-19 2016-07-26 Globalfoundries Inc. Feature etching using varying supply of power pulses
US9478408B2 (en) 2014-06-06 2016-10-25 Lam Research Corporation Systems and methods for removing particles from a substrate processing chamber using RF plasma cycling and purging
US10047438B2 (en) 2014-06-10 2018-08-14 Lam Research Corporation Defect control and stability of DC bias in RF plasma-based substrate processing systems using molecular reactive purge gas
US10081869B2 (en) 2014-06-10 2018-09-25 Lam Research Corporation Defect control in RF plasma substrate processing systems using DC bias voltage during movement of substrates
US9828672B2 (en) 2015-03-26 2017-11-28 Lam Research Corporation Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma
KR102452593B1 (ko) 2015-04-15 2022-10-11 삼성전자주식회사 반도체 장치의 제조 방법
JP6778639B2 (ja) * 2017-03-08 2020-11-04 東京エレクトロン株式会社 高周波発生器及びプラズマ処理装置
US11761079B2 (en) 2017-12-07 2023-09-19 Lam Research Corporation Oxidation resistant protective layer in chamber conditioning
US10760158B2 (en) 2017-12-15 2020-09-01 Lam Research Corporation Ex situ coating of chamber components for semiconductor processing
US12371781B2 (en) 2018-10-19 2025-07-29 Lam Research Corporation In situ protective coating of chamber components for semiconductor processing
CN112144036B (zh) * 2020-08-24 2021-04-20 宁波中骏森驰汽车零部件股份有限公司 一种pvd真空镀膜机
US12181801B2 (en) 2021-05-03 2024-12-31 Applied Materials, Inc. Chamber and methods of treating a substrate after exposure to radiation
CN116053109B (zh) * 2023-03-16 2025-10-21 长鑫存储技术有限公司 电容耦合等离子体处理装置

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US586339A (en) * 1897-07-13 Puzzle
JPH0752718B2 (ja) 1984-11-26 1995-06-05 株式会社半導体エネルギー研究所 薄膜形成方法
GB8516537D0 (en) * 1985-06-29 1985-07-31 Standard Telephones Cables Ltd Pulsed plasma apparatus
JPS62271418A (ja) 1986-05-20 1987-11-25 Matsushita Electric Ind Co Ltd 非晶質シリコン半導体素子の製造方法
JP2588388B2 (ja) 1986-08-08 1997-03-05 株式会社 半導体エネルギー研究所 被膜作製方法
US5057185A (en) * 1990-09-27 1991-10-15 Consortium For Surface Processing, Inc. Triode plasma reactor with phase modulated plasma control
US5330606A (en) 1990-12-14 1994-07-19 Matsushita Electric Industrial Co., Ltd. Plasma source for etching
US5330578A (en) * 1991-03-12 1994-07-19 Semiconductor Energy Laboratory Co., Ltd. Plasma treatment apparatus
JP3193803B2 (ja) 1993-03-12 2001-07-30 株式会社半導体エネルギー研究所 半導体素子の作製方法
JPH06333857A (ja) 1993-05-27 1994-12-02 Semiconductor Energy Lab Co Ltd 成膜装置および成膜方法
TW369686B (en) 1993-07-27 1999-09-11 Semiconductor Energy Lab Corp Semiconductor device and process for fabricating the same
EP0653501B1 (en) * 1993-11-11 1998-02-04 Nissin Electric Company, Limited Plasma-CVD method and apparatus
US5900103A (en) * 1994-04-20 1999-05-04 Tokyo Electron Limited Plasma treatment method and apparatus
US5779925A (en) * 1994-10-14 1998-07-14 Fujitsu Limited Plasma processing with less damage
JP2956494B2 (ja) * 1994-10-26 1999-10-04 住友金属工業株式会社 プラズマ処理装置
US5814529A (en) 1995-01-17 1998-09-29 Semiconductor Energy Laboratory Co., Ltd. Method for producing a semiconductor integrated circuit including a thin film transistor and a capacitor
JP2978940B2 (ja) * 1995-05-10 1999-11-15 治久 木下 プラズマプロセス装置の反応室のクリーニング方法
JPH09167755A (ja) * 1995-12-15 1997-06-24 Nec Corp プラズマ酸化膜処理装置
JP3122618B2 (ja) * 1996-08-23 2001-01-09 東京エレクトロン株式会社 プラズマ処理装置
US6214162B1 (en) * 1996-09-27 2001-04-10 Tokyo Electron Limited Plasma processing apparatus
US5824607A (en) * 1997-02-06 1998-10-20 Applied Materials, Inc. Plasma confinement for an inductively coupled plasma reactor
US5843239A (en) * 1997-03-03 1998-12-01 Applied Materials, Inc. Two-step process for cleaning a substrate processing chamber
JP3582287B2 (ja) * 1997-03-26 2004-10-27 株式会社日立製作所 エッチング装置
US6041734A (en) * 1997-12-01 2000-03-28 Applied Materials, Inc. Use of an asymmetric waveform to control ion bombardment during substrate processing
JPH11224795A (ja) * 1998-02-10 1999-08-17 Shin Seiki:Kk プラズマ生成方法、プラズマ生成装置、プラズマ利用表面処理方法、並びにプラズマ利用ガス処理方法
JPH11293468A (ja) * 1998-04-07 1999-10-26 Nissin Electric Co Ltd プラズマｃｖｄ装置およびそのクリーニング方法
JP2000045061A (ja) * 1998-07-27 2000-02-15 Pascal Kk グロー放電処理に供するパルスモードでの狭グロー放電制御方法及び処理温度制御方法及びその狭グロー放電処理装置
TW507256B (en) * 2000-03-13 2002-10-21 Mitsubishi Heavy Ind Ltd Discharge plasma generating method, discharge plasma generating apparatus, semiconductor device fabrication method, and semiconductor device fabrication apparatus
JP4592867B2 (ja) * 2000-03-27 2010-12-08 株式会社半導体エネルギー研究所 平行平板形プラズマｃｖｄ装置及びドライクリーニングの方法
US6441555B1 (en) * 2000-03-31 2002-08-27 Lam Research Corporation Plasma excitation coil
DE10309711A1 (de) * 2001-09-14 2004-09-16 Robert Bosch Gmbh Verfahren zum Einätzen von Strukturen in einem Ätzkörper mit einem Plasma
JP2004128159A (ja) * 2002-10-01 2004-04-22 Mitsubishi Heavy Ind Ltd 高周波プラズマ発生装置および高周波プラズマ発生方法
AU2002344594B2 (en) * 2002-10-29 2005-06-09 Mitsubishi Heavy Industries, Ltd. Method and device for generating uniform high-frequency plasma over large surface area used for plasma chemical vapor deposition apparatus
US7291360B2 (en) * 2004-03-26 2007-11-06 Applied Materials, Inc. Chemical vapor deposition plasma process using plural ion shower grids
US7244474B2 (en) * 2004-03-26 2007-07-17 Applied Materials, Inc. Chemical vapor deposition plasma process using an ion shower grid
US20050241670A1 (en) * 2004-04-29 2005-11-03 Dong Chun C Method for cleaning a reactor using electron attachment
US20050279384A1 (en) * 2004-06-17 2005-12-22 Guidotti Emmanuel P Method and processing system for controlling a chamber cleaning process
US7851367B2 (en) * 2006-08-31 2010-12-14 Kabushiki Kaisha Toshiba Method for plasma processing a substrate
JP2008060429A (ja) * 2006-08-31 2008-03-13 Toshiba Corp 基板のプラズマ処理装置及びプラズマ処理方法
JP4660498B2 (ja) * 2007-03-27 2011-03-30 株式会社東芝 基板のプラズマ処理装置

Similar Documents

Publication Publication Date Title
JP2001271170A5 (https=)
WO2021137085A3 (en) High voltage, high efficiency sine wave generator that prevents spikes during amplitude adjustments and switching of channels
EP3804809B1 (en) Optimizing characteristics of an electric field to increase the field's effect on proliferating cells
EP0708618B1 (en) An electrosurgical generator
RU2005108355A (ru) Способ косметического ухода за кожей, предотвращающий старение
IL152223A0 (en) Apparatus for electromedical therapy
KR970061012A (ko) 방전 램프 작동용 장치 및 그 방법
TW200504815A (en) Apparatus using hybrid coupled plasma
DE69721332D1 (de) Mehrkanalige mikrostromvorrichtung mit interferenzwellen
JP3636511B2 (ja) 電気手術装置
JP2003109794A (ja) プラズマ発生方法及びプラズマ発生装置
CN202537652U (zh) 用于阻断肾动脉交感神经丛的射频消融治疗设备
US6703818B2 (en) AC to AC power converter for electronic devices having substantially different output voltage/current characteristics
DE50300964D1 (de) Schaltung zur elektrischen leistungsfaktorkorrektur
JPS6439106A (en) Single sideband modulator
JP2000312474A5 (https=)
JP2018088819A (ja) 高周波電源
CN104284634B (zh) 高频外科手术设备
JP7657750B2 (ja) 電気医療用発電機
JPS6474813A (en) Class f push-pull amplifier of high efficiency
JPH1131600A5 (https=)
ITBZ20040031A1 (it) Alimentatore ad alta frequenza ed alta tensione con controllo retroattivo.
HK40039803A (en) Optimizing characteristics of an electric field to increase the field’s effect on proliferating cells
HK40039803B (en) Optimizing characteristics of an electric field to increase the field’s effect on proliferating cells
MY135228A (en) Surface acoustic wave device