JP4592867B2 - 平行平板形プラズマｃｖｄ装置及びドライクリーニングの方法 - Google Patents

平行平板形プラズマｃｖｄ装置及びドライクリーニングの方法 Download PDF

Info

Publication number
JP4592867B2
JP4592867B2 JP2000087474A JP2000087474A JP4592867B2 JP 4592867 B2 JP4592867 B2 JP 4592867B2 JP 2000087474 A JP2000087474 A JP 2000087474A JP 2000087474 A JP2000087474 A JP 2000087474A JP 4592867 B2 JP4592867 B2 JP 4592867B2
Authority
JP
Japan
Prior art keywords
dry cleaning
electrode
changeover switch
amplitude modulation
pulse amplitude
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000087474A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001271170A5 (https=
JP2001271170A (ja
Inventor
充弘 一條
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2000087474A priority Critical patent/JP4592867B2/ja
Priority to US09/818,188 priority patent/US6675816B2/en
Publication of JP2001271170A publication Critical patent/JP2001271170A/ja
Priority to US10/752,520 priority patent/US7223446B2/en
Priority to US11/734,309 priority patent/US7569256B2/en
Publication of JP2001271170A5 publication Critical patent/JP2001271170A5/ja
Application granted granted Critical
Publication of JP4592867B2 publication Critical patent/JP4592867B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/905—Cleaning of reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
JP2000087474A 2000-03-27 2000-03-27 平行平板形プラズマｃｖｄ装置及びドライクリーニングの方法 Expired - Fee Related JP4592867B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2000087474A JP4592867B2 (ja) 2000-03-27 2000-03-27 平行平板形プラズマｃｖｄ装置及びドライクリーニングの方法
US09/818,188 US6675816B2 (en) 2000-03-27 2001-03-26 Plasma CVD apparatus and dry cleaning method of the same
US10/752,520 US7223446B2 (en) 2000-03-27 2004-01-08 Plasma CVD apparatus and dry cleaning method of the same
US11/734,309 US7569256B2 (en) 2000-03-27 2007-04-12 Plasma CVD apparatus and dry cleaning method of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000087474A JP4592867B2 (ja) 2000-03-27 2000-03-27 平行平板形プラズマｃｖｄ装置及びドライクリーニングの方法

Publications (3)

Publication Number Publication Date
JP2001271170A JP2001271170A (ja) 2001-10-02
JP2001271170A5 JP2001271170A5 (https=) 2007-05-24
JP4592867B2 true JP4592867B2 (ja) 2010-12-08

Family

ID=18603479

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000087474A Expired - Fee Related JP4592867B2 (ja) 2000-03-27 2000-03-27 平行平板形プラズマｃｖｄ装置及びドライクリーニングの方法

Country Status (2)

Country Link
US (3) US6675816B2 (https=)
JP (1) JP4592867B2 (https=)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4592867B2 (ja) * 2000-03-27 2010-12-08 株式会社半導体エネルギー研究所 平行平板形プラズマｃｖｄ装置及びドライクリーニングの方法
WO2002061173A2 (en) * 2001-01-29 2002-08-08 The Board Of Regents For Oklahoma State University Advanced composite ormosil coatings
JP3702235B2 (ja) * 2002-03-11 2005-10-05 三菱重工業株式会社 シリコン堆積膜除去方法
US7067439B2 (en) 2002-06-14 2006-06-27 Applied Materials, Inc. ALD metal oxide deposition process using direct oxidation
TW200410337A (en) * 2002-12-02 2004-06-16 Au Optronics Corp Dry cleaning method for plasma reaction chamber
US7500445B2 (en) * 2003-01-27 2009-03-10 Applied Materials, Inc. Method and apparatus for cleaning a CVD chamber
US20050241762A1 (en) * 2004-04-30 2005-11-03 Applied Materials, Inc. Alternating asymmetrical plasma generation in a process chamber
US8119210B2 (en) * 2004-05-21 2012-02-21 Applied Materials, Inc. Formation of a silicon oxynitride layer on a high-k dielectric material
JP2008508166A (ja) * 2004-06-18 2008-03-21 リージェンツ・オブ・ザ・ユニヴァーシティー・オブ・ミネソタ 高周波プラズマを用いてナノ粒子を生成するための方法および装置
US20060000552A1 (en) * 2004-07-05 2006-01-05 Tokyo Electron Limited Plasma processing apparatus and cleaning method thereof
JP4758159B2 (ja) * 2005-07-19 2011-08-24 株式会社日立ハイテクノロジーズ プラズマエッチング装置および微粒子除去方法
JP4677612B2 (ja) * 2006-01-25 2011-04-27 独立行政法人産業技術総合研究所 炭素材料が被着した被処理物の清浄方法
US7678710B2 (en) * 2006-03-09 2010-03-16 Applied Materials, Inc. Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system
US7837838B2 (en) * 2006-03-09 2010-11-23 Applied Materials, Inc. Method of fabricating a high dielectric constant transistor gate using a low energy plasma apparatus
US7645710B2 (en) * 2006-03-09 2010-01-12 Applied Materials, Inc. Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system
JP4497323B2 (ja) * 2006-03-29 2010-07-07 三菱電機株式会社 プラズマｃｖｄ装置
US20070259111A1 (en) * 2006-05-05 2007-11-08 Singh Kaushal K Method and apparatus for photo-excitation of chemicals for atomic layer deposition of dielectric film
WO2008039845A2 (en) * 2006-09-26 2008-04-03 Applied Materials, Inc. Fluorine plasma treatment of high-k gate stack for defect passivation
US20090084987A1 (en) * 2007-09-28 2009-04-02 Varian Semiconductor Equipment Associates, Inc. Charge neutralization in a plasma processing apparatus
JP5211332B2 (ja) * 2008-07-01 2013-06-12 株式会社ユーテック プラズマｃｖｄ装置、ｄｌｃ膜及び薄膜の製造方法
US20100098875A1 (en) * 2008-10-17 2010-04-22 Andreas Fischer Pre-coating and wafer-less auto-cleaning system and method
JP5390846B2 (ja) 2008-12-09 2014-01-15 東京エレクトロン株式会社 プラズマエッチング装置及びプラズマクリーニング方法
US20100169289A1 (en) * 2008-12-30 2010-07-01 International Business Machines Corporation Two Phase Commit With Grid Elements
US8440061B2 (en) * 2009-07-20 2013-05-14 Lam Research Corporation System and method for plasma arc detection, isolation and prevention
US9275838B2 (en) * 2009-09-02 2016-03-01 Lam Research Corporation Arrangements for manipulating plasma confinement within a plasma processing system and methods thereof
US9401263B2 (en) * 2013-09-19 2016-07-26 Globalfoundries Inc. Feature etching using varying supply of power pulses
US9478408B2 (en) 2014-06-06 2016-10-25 Lam Research Corporation Systems and methods for removing particles from a substrate processing chamber using RF plasma cycling and purging
US10047438B2 (en) 2014-06-10 2018-08-14 Lam Research Corporation Defect control and stability of DC bias in RF plasma-based substrate processing systems using molecular reactive purge gas
US10081869B2 (en) 2014-06-10 2018-09-25 Lam Research Corporation Defect control in RF plasma substrate processing systems using DC bias voltage during movement of substrates
US9828672B2 (en) 2015-03-26 2017-11-28 Lam Research Corporation Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma
KR102452593B1 (ko) 2015-04-15 2022-10-11 삼성전자주식회사 반도체 장치의 제조 방법
JP6778639B2 (ja) * 2017-03-08 2020-11-04 東京エレクトロン株式会社 高周波発生器及びプラズマ処理装置
US11761079B2 (en) 2017-12-07 2023-09-19 Lam Research Corporation Oxidation resistant protective layer in chamber conditioning
US10760158B2 (en) 2017-12-15 2020-09-01 Lam Research Corporation Ex situ coating of chamber components for semiconductor processing
US12371781B2 (en) 2018-10-19 2025-07-29 Lam Research Corporation In situ protective coating of chamber components for semiconductor processing
CN112144036B (zh) * 2020-08-24 2021-04-20 宁波中骏森驰汽车零部件股份有限公司 一种pvd真空镀膜机
US12181801B2 (en) 2021-05-03 2024-12-31 Applied Materials, Inc. Chamber and methods of treating a substrate after exposure to radiation
CN116053109B (zh) * 2023-03-16 2025-10-21 长鑫存储技术有限公司 电容耦合等离子体处理装置

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US586339A (en) * 1897-07-13 Puzzle
JPH0752718B2 (ja) 1984-11-26 1995-06-05 株式会社半導体エネルギー研究所 薄膜形成方法
GB8516537D0 (en) * 1985-06-29 1985-07-31 Standard Telephones Cables Ltd Pulsed plasma apparatus
JPS62271418A (ja) 1986-05-20 1987-11-25 Matsushita Electric Ind Co Ltd 非晶質シリコン半導体素子の製造方法
JP2588388B2 (ja) 1986-08-08 1997-03-05 株式会社 半導体エネルギー研究所 被膜作製方法
US5057185A (en) * 1990-09-27 1991-10-15 Consortium For Surface Processing, Inc. Triode plasma reactor with phase modulated plasma control
US5330606A (en) 1990-12-14 1994-07-19 Matsushita Electric Industrial Co., Ltd. Plasma source for etching
US5330578A (en) * 1991-03-12 1994-07-19 Semiconductor Energy Laboratory Co., Ltd. Plasma treatment apparatus
JP3193803B2 (ja) 1993-03-12 2001-07-30 株式会社半導体エネルギー研究所 半導体素子の作製方法
JPH06333857A (ja) 1993-05-27 1994-12-02 Semiconductor Energy Lab Co Ltd 成膜装置および成膜方法
TW369686B (en) 1993-07-27 1999-09-11 Semiconductor Energy Lab Corp Semiconductor device and process for fabricating the same
EP0653501B1 (en) * 1993-11-11 1998-02-04 Nissin Electric Company, Limited Plasma-CVD method and apparatus
US5900103A (en) * 1994-04-20 1999-05-04 Tokyo Electron Limited Plasma treatment method and apparatus
US5779925A (en) * 1994-10-14 1998-07-14 Fujitsu Limited Plasma processing with less damage
JP2956494B2 (ja) * 1994-10-26 1999-10-04 住友金属工業株式会社 プラズマ処理装置
US5814529A (en) 1995-01-17 1998-09-29 Semiconductor Energy Laboratory Co., Ltd. Method for producing a semiconductor integrated circuit including a thin film transistor and a capacitor
JP2978940B2 (ja) * 1995-05-10 1999-11-15 治久 木下 プラズマプロセス装置の反応室のクリーニング方法
JPH09167755A (ja) * 1995-12-15 1997-06-24 Nec Corp プラズマ酸化膜処理装置
JP3122618B2 (ja) * 1996-08-23 2001-01-09 東京エレクトロン株式会社 プラズマ処理装置
US6214162B1 (en) * 1996-09-27 2001-04-10 Tokyo Electron Limited Plasma processing apparatus
US5824607A (en) * 1997-02-06 1998-10-20 Applied Materials, Inc. Plasma confinement for an inductively coupled plasma reactor
US5843239A (en) * 1997-03-03 1998-12-01 Applied Materials, Inc. Two-step process for cleaning a substrate processing chamber
JP3582287B2 (ja) * 1997-03-26 2004-10-27 株式会社日立製作所 エッチング装置
US6041734A (en) * 1997-12-01 2000-03-28 Applied Materials, Inc. Use of an asymmetric waveform to control ion bombardment during substrate processing
JPH11224795A (ja) * 1998-02-10 1999-08-17 Shin Seiki:Kk プラズマ生成方法、プラズマ生成装置、プラズマ利用表面処理方法、並びにプラズマ利用ガス処理方法
JPH11293468A (ja) * 1998-04-07 1999-10-26 Nissin Electric Co Ltd プラズマｃｖｄ装置およびそのクリーニング方法
JP2000045061A (ja) * 1998-07-27 2000-02-15 Pascal Kk グロー放電処理に供するパルスモードでの狭グロー放電制御方法及び処理温度制御方法及びその狭グロー放電処理装置
TW507256B (en) * 2000-03-13 2002-10-21 Mitsubishi Heavy Ind Ltd Discharge plasma generating method, discharge plasma generating apparatus, semiconductor device fabrication method, and semiconductor device fabrication apparatus
JP4592867B2 (ja) * 2000-03-27 2010-12-08 株式会社半導体エネルギー研究所 平行平板形プラズマｃｖｄ装置及びドライクリーニングの方法
US6441555B1 (en) * 2000-03-31 2002-08-27 Lam Research Corporation Plasma excitation coil
DE10309711A1 (de) * 2001-09-14 2004-09-16 Robert Bosch Gmbh Verfahren zum Einätzen von Strukturen in einem Ätzkörper mit einem Plasma
JP2004128159A (ja) * 2002-10-01 2004-04-22 Mitsubishi Heavy Ind Ltd 高周波プラズマ発生装置および高周波プラズマ発生方法
AU2002344594B2 (en) * 2002-10-29 2005-06-09 Mitsubishi Heavy Industries, Ltd. Method and device for generating uniform high-frequency plasma over large surface area used for plasma chemical vapor deposition apparatus
US7291360B2 (en) * 2004-03-26 2007-11-06 Applied Materials, Inc. Chemical vapor deposition plasma process using plural ion shower grids
US7244474B2 (en) * 2004-03-26 2007-07-17 Applied Materials, Inc. Chemical vapor deposition plasma process using an ion shower grid
US20050241670A1 (en) * 2004-04-29 2005-11-03 Dong Chun C Method for cleaning a reactor using electron attachment
US20050279384A1 (en) * 2004-06-17 2005-12-22 Guidotti Emmanuel P Method and processing system for controlling a chamber cleaning process
US7851367B2 (en) * 2006-08-31 2010-12-14 Kabushiki Kaisha Toshiba Method for plasma processing a substrate
JP2008060429A (ja) * 2006-08-31 2008-03-13 Toshiba Corp 基板のプラズマ処理装置及びプラズマ処理方法
JP4660498B2 (ja) * 2007-03-27 2011-03-30 株式会社東芝 基板のプラズマ処理装置

Also Published As

Publication number Publication date
US20040139915A1 (en) 2004-07-22
US20070181146A1 (en) 2007-08-09
US20010025606A1 (en) 2001-10-04
US6675816B2 (en) 2004-01-13
JP2001271170A (ja) 2001-10-02
US7569256B2 (en) 2009-08-04
US7223446B2 (en) 2007-05-29

Similar Documents

Publication Publication Date Title
JP4592867B2 (ja) 平行平板形プラズマｃｖｄ装置及びドライクリーニングの方法
US6499427B1 (en) Plasma CVD apparatus
US5585012A (en) Self-cleaning polymer-free top electrode for parallel electrode etch operation
JP4714166B2 (ja) 基板のプラズマ処理装置及びプラズマ処理方法
JPWO2000074127A1 (ja) プラズマプロセス装置
AU2002344594A1 (en) Method and device for generating uniform high-frequency plasma over large surface area used for plasma chemical vapor deposition apparatus
CN109478489B (zh) 用于多区域电极阵列中的rf功率分配的方法
JPH08321491A (ja) ウエハ清浄化スパッタリングプロセス
US7851367B2 (en) Method for plasma processing a substrate
KR100932763B1 (ko) 시료의 플라즈마 에칭방법
JP3520577B2 (ja) プラズマ処理装置
US10991594B2 (en) Method for area-selective etching of silicon nitride layers for the manufacture of microelectronic workpieces
JP3227949B2 (ja) プラズマ処理方法及び装置
JP2000328248A (ja) 薄膜形成装置のクリーニング方法及び薄膜形成装置
JPH10242130A (ja) プラズマ処理方法及び装置
JPH0822980A (ja) プラズマ処理装置
JP2797307B2 (ja) プラズマプロセス装置
JP3335762B2 (ja) プラズマクリーニング方法
JP3817171B2 (ja) プラズマプロセス装置
JP2696892B2 (ja) プラズマプロセス装置
JPH0831442B2 (ja) プラズマ処理方法及び装置
JP2669249B2 (ja) プラズマ処理装置及び該装置のクリーニング方法
US12300467B2 (en) Plasma processing method and plasma processing apparatus
JP2002043235A (ja) プラズマ処理装置
JP2885150B2 (ja) ドライエッチング装置のドライクリーニング方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070314

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070314

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090327

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100720

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100825

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20100914

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20100915

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130924

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 4592867

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130924

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees