JP2001244551A - パルセーションレーザ - Google Patents
パルセーションレーザInfo
- Publication number
- JP2001244551A JP2001244551A JP2000051626A JP2000051626A JP2001244551A JP 2001244551 A JP2001244551 A JP 2001244551A JP 2000051626 A JP2000051626 A JP 2000051626A JP 2000051626 A JP2000051626 A JP 2000051626A JP 2001244551 A JP2001244551 A JP 2001244551A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- pulsation
- laser
- schottky barrier
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000010349 pulsation Effects 0.000 title claims abstract description 77
- 230000004888 barrier function Effects 0.000 claims abstract description 37
- 239000004065 semiconductor Substances 0.000 claims abstract description 18
- 239000010410 layer Substances 0.000 claims description 133
- 238000005253 cladding Methods 0.000 claims description 37
- 239000002344 surface layer Substances 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 9
- 239000000470 constituent Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 3
- 230000001105 regulatory effect Effects 0.000 claims description 2
- 239000000463 material Substances 0.000 claims 3
- 238000002513 implantation Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 238000003475 lamination Methods 0.000 abstract 1
- 238000002347 injection Methods 0.000 description 19
- 239000007924 injection Substances 0.000 description 19
- 238000010521 absorption reaction Methods 0.000 description 11
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 5
- 239000000969 carrier Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000002517 constrictor effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000051626A JP2001244551A (ja) | 2000-02-28 | 2000-02-28 | パルセーションレーザ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000051626A JP2001244551A (ja) | 2000-02-28 | 2000-02-28 | パルセーションレーザ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001244551A true JP2001244551A (ja) | 2001-09-07 |
| JP2001244551A5 JP2001244551A5 (enrdf_load_stackoverflow) | 2007-02-08 |
Family
ID=18573254
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000051626A Pending JP2001244551A (ja) | 2000-02-28 | 2000-02-28 | パルセーションレーザ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001244551A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005183927A (ja) * | 2003-11-27 | 2005-07-07 | Sharp Corp | 半導体レーザ素子、光ディスク装置および光伝送システム |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5717188A (en) * | 1980-07-04 | 1982-01-28 | Fujitsu Ltd | Semiconductor light-emitting element |
| JPS61179617A (ja) * | 1985-02-05 | 1986-08-12 | Matsushita Electric Ind Co Ltd | 光論理素子 |
| JPH02201989A (ja) * | 1989-01-30 | 1990-08-10 | Agency Of Ind Science & Technol | 自励発振半導体レーザ装置 |
| JPH0362984A (ja) * | 1989-07-31 | 1991-03-19 | Nec Corp | 半導体レーザ装置 |
| JPH03241879A (ja) * | 1990-02-20 | 1991-10-29 | Sony Corp | カオス光発生自励発振レーザ装置 |
| JPH04309278A (ja) * | 1991-04-08 | 1992-10-30 | Hitachi Ltd | 半導体レーザ |
| JPH0846289A (ja) * | 1994-08-02 | 1996-02-16 | Nippondenso Co Ltd | 半導体レーザの製造方法 |
| JPH1012923A (ja) * | 1996-04-26 | 1998-01-16 | Sanyo Electric Co Ltd | 発光素子およびその製造方法 |
-
2000
- 2000-02-28 JP JP2000051626A patent/JP2001244551A/ja active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5717188A (en) * | 1980-07-04 | 1982-01-28 | Fujitsu Ltd | Semiconductor light-emitting element |
| JPS61179617A (ja) * | 1985-02-05 | 1986-08-12 | Matsushita Electric Ind Co Ltd | 光論理素子 |
| JPH02201989A (ja) * | 1989-01-30 | 1990-08-10 | Agency Of Ind Science & Technol | 自励発振半導体レーザ装置 |
| JPH0362984A (ja) * | 1989-07-31 | 1991-03-19 | Nec Corp | 半導体レーザ装置 |
| JPH03241879A (ja) * | 1990-02-20 | 1991-10-29 | Sony Corp | カオス光発生自励発振レーザ装置 |
| JPH04309278A (ja) * | 1991-04-08 | 1992-10-30 | Hitachi Ltd | 半導体レーザ |
| JPH0846289A (ja) * | 1994-08-02 | 1996-02-16 | Nippondenso Co Ltd | 半導体レーザの製造方法 |
| JPH1012923A (ja) * | 1996-04-26 | 1998-01-16 | Sanyo Electric Co Ltd | 発光素子およびその製造方法 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005183927A (ja) * | 2003-11-27 | 2005-07-07 | Sharp Corp | 半導体レーザ素子、光ディスク装置および光伝送システム |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20061215 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20061215 |
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| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20100126 |
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| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100202 |
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| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20100601 |