JP2001195900A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JP2001195900A
JP2001195900A JP2000007764A JP2000007764A JP2001195900A JP 2001195900 A JP2001195900 A JP 2001195900A JP 2000007764 A JP2000007764 A JP 2000007764A JP 2000007764 A JP2000007764 A JP 2000007764A JP 2001195900 A JP2001195900 A JP 2001195900A
Authority
JP
Japan
Prior art keywords
sense amplifier
signal
memory cell
test mode
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000007764A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001195900A5 (enExample
Inventor
Shunsuke Endo
俊介 遠藤
Takashi Ito
孝 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2000007764A priority Critical patent/JP2001195900A/ja
Priority to TW089122231A priority patent/TW480484B/zh
Priority to US09/694,485 priority patent/US6259640B1/en
Priority to KR10-2000-0063179A priority patent/KR100383007B1/ko
Publication of JP2001195900A publication Critical patent/JP2001195900A/ja
Publication of JP2001195900A5 publication Critical patent/JP2001195900A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Dram (AREA)
  • Tests Of Electronic Circuits (AREA)
JP2000007764A 2000-01-17 2000-01-17 半導体記憶装置 Pending JP2001195900A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2000007764A JP2001195900A (ja) 2000-01-17 2000-01-17 半導体記憶装置
TW089122231A TW480484B (en) 2000-01-17 2000-10-23 Semiconductor storage device
US09/694,485 US6259640B1 (en) 2000-01-17 2000-10-24 Semiconductor storage device having a delayed sense amplifier activating signal during a test mode
KR10-2000-0063179A KR100383007B1 (ko) 2000-01-17 2000-10-26 반도체 기억 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000007764A JP2001195900A (ja) 2000-01-17 2000-01-17 半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2001195900A true JP2001195900A (ja) 2001-07-19
JP2001195900A5 JP2001195900A5 (enExample) 2007-02-01

Family

ID=18536126

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000007764A Pending JP2001195900A (ja) 2000-01-17 2000-01-17 半導体記憶装置

Country Status (4)

Country Link
US (1) US6259640B1 (enExample)
JP (1) JP2001195900A (enExample)
KR (1) KR100383007B1 (enExample)
TW (1) TW480484B (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005339588A (ja) * 2004-05-24 2005-12-08 Matsushita Electric Ind Co Ltd 半導体記憶装置の検査方法と半導体記憶装置
KR100543911B1 (ko) * 2003-04-29 2006-01-23 주식회사 하이닉스반도체 반도체 테스트 회로
US6992939B2 (en) * 2004-01-26 2006-01-31 Micron Technology, Inc. Method and apparatus for identifying short circuits in an integrated circuit device
JP2009020948A (ja) * 2007-07-11 2009-01-29 Elpida Memory Inc 半導体記憶装置
US7558137B2 (en) 2006-09-27 2009-07-07 Fujitsu Microelectronics Limited Semiconductor memory and testing method of same

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4400999B2 (ja) 2000-06-29 2010-01-20 株式会社ルネサステクノロジ 半導体記憶装置
JP2002230998A (ja) * 2001-02-01 2002-08-16 Mitsubishi Electric Corp 半導体記憶装置
DE102006007321A1 (de) * 2006-02-16 2007-08-30 Infineon Technologies Ag Integrierte Schaltkreis-Anordnung und Verfahren zum Ermitteln des parasitären ohmschen Widerstands zumindest der Zuleitung zumindest einer Speicherzelle einer integrierten Schaltkreis-Anordnung
KR100965773B1 (ko) * 2008-04-24 2010-06-24 주식회사 하이닉스반도체 메모리소자의 센스앰프제어회로 및 그 제어방법
US7852692B2 (en) * 2008-06-30 2010-12-14 Freescale Semiconductor, Inc. Memory operation testing
CN115376600B (zh) * 2022-08-26 2025-10-21 长鑫存储技术有限公司 存储器的测试方法、装置、设备及介质

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0428084A (ja) 1990-05-23 1992-01-30 Mitsubishi Electric Corp 半導体記憶装置
JPH04356789A (ja) * 1990-07-17 1992-12-10 Nec Corp 半導体メモリ装置
KR0138208B1 (ko) * 1994-12-08 1998-04-28 문정환 반도체 메모리 소자
KR19980034731A (ko) * 1996-11-08 1998-08-05 김영환 반도체 메모리 소자의 스트레스 테스트 장치 및 그 방법
JP3803463B2 (ja) * 1997-07-23 2006-08-02 エルピーダメモリ株式会社 半導体記憶装置
US6163862A (en) * 1997-12-01 2000-12-19 International Business Machines Corporation On-chip test circuit for evaluating an on-chip signal using an external test signal
JPH11328972A (ja) * 1998-05-18 1999-11-30 Mitsubishi Electric Corp 半導体装置、その設計方法およびその検査方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100543911B1 (ko) * 2003-04-29 2006-01-23 주식회사 하이닉스반도체 반도체 테스트 회로
US6992939B2 (en) * 2004-01-26 2006-01-31 Micron Technology, Inc. Method and apparatus for identifying short circuits in an integrated circuit device
US7426148B2 (en) 2004-01-26 2008-09-16 Micron Technology, Inc. Method and apparatus for identifying short circuits in an integrated circuit device
JP2005339588A (ja) * 2004-05-24 2005-12-08 Matsushita Electric Ind Co Ltd 半導体記憶装置の検査方法と半導体記憶装置
US7558137B2 (en) 2006-09-27 2009-07-07 Fujitsu Microelectronics Limited Semiconductor memory and testing method of same
JP2009020948A (ja) * 2007-07-11 2009-01-29 Elpida Memory Inc 半導体記憶装置

Also Published As

Publication number Publication date
US6259640B1 (en) 2001-07-10
KR20010086264A (ko) 2001-09-10
KR100383007B1 (ko) 2003-05-09
TW480484B (en) 2002-03-21

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