JP2001168081A5 - - Google Patents

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Publication number
JP2001168081A5
JP2001168081A5 JP1999352351A JP35235199A JP2001168081A5 JP 2001168081 A5 JP2001168081 A5 JP 2001168081A5 JP 1999352351 A JP1999352351 A JP 1999352351A JP 35235199 A JP35235199 A JP 35235199A JP 2001168081 A5 JP2001168081 A5 JP 2001168081A5
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JP
Japan
Prior art keywords
conductor
wafer
etched
dry etching
melting point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1999352351A
Other languages
English (en)
Japanese (ja)
Other versions
JP4161493B2 (ja
JP2001168081A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP35235199A priority Critical patent/JP4161493B2/ja
Priority claimed from JP35235199A external-priority patent/JP4161493B2/ja
Priority to US09/733,280 priority patent/US6727181B2/en
Publication of JP2001168081A publication Critical patent/JP2001168081A/ja
Publication of JP2001168081A5 publication Critical patent/JP2001168081A5/ja
Application granted granted Critical
Publication of JP4161493B2 publication Critical patent/JP4161493B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP35235199A 1999-12-10 1999-12-10 エッチング方法およびマイクロミラーの製造方法 Expired - Fee Related JP4161493B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP35235199A JP4161493B2 (ja) 1999-12-10 1999-12-10 エッチング方法およびマイクロミラーの製造方法
US09/733,280 US6727181B2 (en) 1999-12-10 2000-12-08 Etching method and manufacturing method of a structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP35235199A JP4161493B2 (ja) 1999-12-10 1999-12-10 エッチング方法およびマイクロミラーの製造方法

Publications (3)

Publication Number Publication Date
JP2001168081A JP2001168081A (ja) 2001-06-22
JP2001168081A5 true JP2001168081A5 (enExample) 2006-04-27
JP4161493B2 JP4161493B2 (ja) 2008-10-08

Family

ID=18423472

Family Applications (1)

Application Number Title Priority Date Filing Date
JP35235199A Expired - Fee Related JP4161493B2 (ja) 1999-12-10 1999-12-10 エッチング方法およびマイクロミラーの製造方法

Country Status (2)

Country Link
US (1) US6727181B2 (enExample)
JP (1) JP4161493B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10144343A1 (de) * 2001-09-10 2003-03-27 Perkinelmer Optoelectronics Sensor zum berührugslosen Messen einer Temperatur
US6912081B2 (en) * 2002-03-12 2005-06-28 Lucent Technologies Inc. Optical micro-electromechanical systems (MEMS) devices and methods of making same
ES2293767B1 (es) * 2005-03-23 2009-02-16 Angel Iglesias, S.A. Procedimiento de fabricacion de membranas metalicas ultrafinas de espesor controlado por ataque ionico reactivo y con parada automatica y microestructuras capacitivas resultantes.
JP2007012819A (ja) * 2005-06-29 2007-01-18 Toshiba Corp ドライエッチング方法
DE102007019638A1 (de) * 2007-04-26 2008-10-30 Robert Bosch Gmbh Verfahren zur Herstellung eines mikromechanischen Bauelements mit Trenchstruktur zur Rückseitenkontaktierung
US8450132B2 (en) * 2008-06-24 2013-05-28 Ecole Polytechnique Federale De Lausanne (Epfl) Thermally activated micromirror and fabrication method
US20120141667A1 (en) * 2010-07-16 2012-06-07 Applied Materials, Inc. Methods for forming barrier/seed layers for copper interconnect structures

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04280427A (ja) * 1991-03-08 1992-10-06 Fuji Electric Co Ltd シリコン基板の加工方法
JP3178123B2 (ja) * 1992-02-25 2001-06-18 富士電機株式会社 櫛歯式アクチュエータの製造方法
JP3089870B2 (ja) * 1992-12-28 2000-09-18 富士電機株式会社 シリコン基体の加工方法
US5308442A (en) * 1993-01-25 1994-05-03 Hewlett-Packard Company Anisotropically etched ink fill slots in silicon
JP2650626B2 (ja) * 1995-03-15 1997-09-03 株式会社日立製作所 プラズマ処理方法
US5658471A (en) * 1995-09-22 1997-08-19 Lexmark International, Inc. Fabrication of thermal ink-jet feed slots in a silicon substrate
JPH10109313A (ja) * 1996-10-08 1998-04-28 Oki Electric Ind Co Ltd 微細金型の製造方法及びそれを応用した樹脂系光導波路
DE19706682C2 (de) * 1997-02-20 1999-01-14 Bosch Gmbh Robert Anisotropes fluorbasiertes Plasmaätzverfahren für Silizium
US6121552A (en) * 1997-06-13 2000-09-19 The Regents Of The University Of Caliofornia Microfabricated high aspect ratio device with an electrical isolation trench
DE19736370C2 (de) * 1997-08-21 2001-12-06 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silizium
DE19757197A1 (de) * 1997-12-22 1999-06-24 Bosch Gmbh Robert Herstellungsverfahren für mikromechanische Vorrichtung
JPH11195641A (ja) * 1998-01-05 1999-07-21 Matsushita Electric Ind Co Ltd プラズマ処理方法
JP3036506B2 (ja) * 1998-02-26 2000-04-24 日本電気株式会社 電子ビーム露光装置用一括アパチャの製造方法
JP2000022172A (ja) * 1998-06-30 2000-01-21 Matsushita Electric Ind Co Ltd 変換装置及びその製造方法
US6014240A (en) * 1998-12-01 2000-01-11 Xerox Corporation Method and apparatus for an integrated laser beam scanner using a carrier substrate
US6483147B1 (en) * 1999-10-25 2002-11-19 Advanced Micro Devices, Inc. Through wafer backside contact to improve SOI heat dissipation
EP1096201A1 (de) * 1999-10-29 2001-05-02 Siemens Aktiengesellschaft Brenner

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