JP4161493B2 - エッチング方法およびマイクロミラーの製造方法 - Google Patents

エッチング方法およびマイクロミラーの製造方法 Download PDF

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Publication number
JP4161493B2
JP4161493B2 JP35235199A JP35235199A JP4161493B2 JP 4161493 B2 JP4161493 B2 JP 4161493B2 JP 35235199 A JP35235199 A JP 35235199A JP 35235199 A JP35235199 A JP 35235199A JP 4161493 B2 JP4161493 B2 JP 4161493B2
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Japan
Prior art keywords
substrate
etching
trench
conductor
film
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Expired - Fee Related
Application number
JP35235199A
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English (en)
Japanese (ja)
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JP2001168081A (ja
JP2001168081A5 (enExample
Inventor
昌輝 原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
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Sony Corp
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Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP35235199A priority Critical patent/JP4161493B2/ja
Priority to US09/733,280 priority patent/US6727181B2/en
Publication of JP2001168081A publication Critical patent/JP2001168081A/ja
Publication of JP2001168081A5 publication Critical patent/JP2001168081A5/ja
Application granted granted Critical
Publication of JP4161493B2 publication Critical patent/JP4161493B2/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
    • B81C1/00563—Avoid or control over-etching
    • B81C1/00587—Processes for avoiding or controlling over-etching not provided for in B81C1/00571 - B81C1/00579
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/04—Optical MEMS
    • B81B2201/042—Micromirrors, not used as optical switches

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Drying Of Semiconductors (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Micromachines (AREA)
JP35235199A 1999-12-10 1999-12-10 エッチング方法およびマイクロミラーの製造方法 Expired - Fee Related JP4161493B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP35235199A JP4161493B2 (ja) 1999-12-10 1999-12-10 エッチング方法およびマイクロミラーの製造方法
US09/733,280 US6727181B2 (en) 1999-12-10 2000-12-08 Etching method and manufacturing method of a structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP35235199A JP4161493B2 (ja) 1999-12-10 1999-12-10 エッチング方法およびマイクロミラーの製造方法

Publications (3)

Publication Number Publication Date
JP2001168081A JP2001168081A (ja) 2001-06-22
JP2001168081A5 JP2001168081A5 (enExample) 2006-04-27
JP4161493B2 true JP4161493B2 (ja) 2008-10-08

Family

ID=18423472

Family Applications (1)

Application Number Title Priority Date Filing Date
JP35235199A Expired - Fee Related JP4161493B2 (ja) 1999-12-10 1999-12-10 エッチング方法およびマイクロミラーの製造方法

Country Status (2)

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US (1) US6727181B2 (enExample)
JP (1) JP4161493B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10144343A1 (de) * 2001-09-10 2003-03-27 Perkinelmer Optoelectronics Sensor zum berührugslosen Messen einer Temperatur
US6912081B2 (en) * 2002-03-12 2005-06-28 Lucent Technologies Inc. Optical micro-electromechanical systems (MEMS) devices and methods of making same
ES2293767B1 (es) * 2005-03-23 2009-02-16 Angel Iglesias, S.A. Procedimiento de fabricacion de membranas metalicas ultrafinas de espesor controlado por ataque ionico reactivo y con parada automatica y microestructuras capacitivas resultantes.
JP2007012819A (ja) * 2005-06-29 2007-01-18 Toshiba Corp ドライエッチング方法
DE102007019638A1 (de) * 2007-04-26 2008-10-30 Robert Bosch Gmbh Verfahren zur Herstellung eines mikromechanischen Bauelements mit Trenchstruktur zur Rückseitenkontaktierung
WO2009155968A1 (en) * 2008-06-24 2009-12-30 Ecole polytechnique fédérale de Lausanne (EPFL) Thermally activated micromirror and fabrication method
US20120141667A1 (en) * 2010-07-16 2012-06-07 Applied Materials, Inc. Methods for forming barrier/seed layers for copper interconnect structures

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04280427A (ja) * 1991-03-08 1992-10-06 Fuji Electric Co Ltd シリコン基板の加工方法
JP3178123B2 (ja) * 1992-02-25 2001-06-18 富士電機株式会社 櫛歯式アクチュエータの製造方法
JP3089870B2 (ja) * 1992-12-28 2000-09-18 富士電機株式会社 シリコン基体の加工方法
US5308442A (en) * 1993-01-25 1994-05-03 Hewlett-Packard Company Anisotropically etched ink fill slots in silicon
JP2650626B2 (ja) * 1995-03-15 1997-09-03 株式会社日立製作所 プラズマ処理方法
US5658471A (en) * 1995-09-22 1997-08-19 Lexmark International, Inc. Fabrication of thermal ink-jet feed slots in a silicon substrate
JPH10109313A (ja) * 1996-10-08 1998-04-28 Oki Electric Ind Co Ltd 微細金型の製造方法及びそれを応用した樹脂系光導波路
DE19706682C2 (de) * 1997-02-20 1999-01-14 Bosch Gmbh Robert Anisotropes fluorbasiertes Plasmaätzverfahren für Silizium
US6121552A (en) * 1997-06-13 2000-09-19 The Regents Of The University Of Caliofornia Microfabricated high aspect ratio device with an electrical isolation trench
DE19736370C2 (de) * 1997-08-21 2001-12-06 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silizium
DE19757197A1 (de) * 1997-12-22 1999-06-24 Bosch Gmbh Robert Herstellungsverfahren für mikromechanische Vorrichtung
JPH11195641A (ja) * 1998-01-05 1999-07-21 Matsushita Electric Ind Co Ltd プラズマ処理方法
JP3036506B2 (ja) * 1998-02-26 2000-04-24 日本電気株式会社 電子ビーム露光装置用一括アパチャの製造方法
JP2000022172A (ja) * 1998-06-30 2000-01-21 Matsushita Electric Ind Co Ltd 変換装置及びその製造方法
US6014240A (en) * 1998-12-01 2000-01-11 Xerox Corporation Method and apparatus for an integrated laser beam scanner using a carrier substrate
US6483147B1 (en) * 1999-10-25 2002-11-19 Advanced Micro Devices, Inc. Through wafer backside contact to improve SOI heat dissipation
EP1096201A1 (de) * 1999-10-29 2001-05-02 Siemens Aktiengesellschaft Brenner

Also Published As

Publication number Publication date
JP2001168081A (ja) 2001-06-22
US20010021585A1 (en) 2001-09-13
US6727181B2 (en) 2004-04-27

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