JP2001160595A5 - - Google Patents

Download PDF

Info

Publication number
JP2001160595A5
JP2001160595A5 JP1999342358A JP34235899A JP2001160595A5 JP 2001160595 A5 JP2001160595 A5 JP 2001160595A5 JP 1999342358 A JP1999342358 A JP 1999342358A JP 34235899 A JP34235899 A JP 34235899A JP 2001160595 A5 JP2001160595 A5 JP 2001160595A5
Authority
JP
Japan
Prior art keywords
element isolation
charge storage
storage layer
memory device
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1999342358A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001160595A (ja
JP3878374B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP34235899A priority Critical patent/JP3878374B2/ja
Priority claimed from JP34235899A external-priority patent/JP3878374B2/ja
Priority to US09/725,564 priority patent/US6462373B2/en
Publication of JP2001160595A publication Critical patent/JP2001160595A/ja
Publication of JP2001160595A5 publication Critical patent/JP2001160595A5/ja
Application granted granted Critical
Publication of JP3878374B2 publication Critical patent/JP3878374B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP34235899A 1999-12-01 1999-12-01 不揮発性半導体記憶装置 Expired - Fee Related JP3878374B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP34235899A JP3878374B2 (ja) 1999-12-01 1999-12-01 不揮発性半導体記憶装置
US09/725,564 US6462373B2 (en) 1999-12-01 2000-11-30 Nonvolatile semiconductor memory device having tapered portion on side wall of charge accumulation layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34235899A JP3878374B2 (ja) 1999-12-01 1999-12-01 不揮発性半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2001160595A JP2001160595A (ja) 2001-06-12
JP2001160595A5 true JP2001160595A5 (enExample) 2005-04-28
JP3878374B2 JP3878374B2 (ja) 2007-02-07

Family

ID=18353115

Family Applications (1)

Application Number Title Priority Date Filing Date
JP34235899A Expired - Fee Related JP3878374B2 (ja) 1999-12-01 1999-12-01 不揮発性半導体記憶装置

Country Status (2)

Country Link
US (1) US6462373B2 (enExample)
JP (1) JP3878374B2 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002246485A (ja) * 2001-02-13 2002-08-30 Mitsubishi Electric Corp 不揮発性半導体記憶装置およびその製造方法
US20020130357A1 (en) * 2001-03-14 2002-09-19 Hurley Kelly T. Self-aligned floating gate flash cell system and method
JP2003007869A (ja) * 2001-06-26 2003-01-10 Fujitsu Ltd 半導体装置及びその製造方法
JP4237561B2 (ja) * 2003-07-04 2009-03-11 株式会社東芝 半導体記憶装置及びその製造方法
US6825526B1 (en) * 2004-01-16 2004-11-30 Advanced Micro Devices, Inc. Structure for increasing drive current in a memory array and related method
JP2007005380A (ja) * 2005-06-21 2007-01-11 Toshiba Corp 半導体装置
US7842618B2 (en) * 2005-08-01 2010-11-30 Spansion Llc System and method for improving mesa width in a semiconductor device
JP4906329B2 (ja) * 2005-12-02 2012-03-28 ラピスセミコンダクタ株式会社 不揮発性半導体記憶装置及びその製造方法
JP2008016777A (ja) * 2006-07-10 2008-01-24 Toshiba Corp 半導体装置およびその製造方法
JP4557992B2 (ja) * 2007-02-13 2010-10-06 株式会社東芝 半導体装置
US7652335B2 (en) * 2007-10-17 2010-01-26 Toshiba America Electronics Components, Inc. Reversely tapered contact structure compatible with dual stress liner process
KR101402890B1 (ko) * 2007-11-30 2014-06-27 삼성전자주식회사 비휘발성 기억 소자 및 그 형성 방법
WO2011097592A1 (en) 2010-02-07 2011-08-11 Zeno Semiconductor , Inc. Semiconductor memory device having electrically floating body transistor, and having both volatile and non-volatile functionality and method
US8692353B2 (en) * 2011-09-02 2014-04-08 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method
US8877614B2 (en) 2011-10-13 2014-11-04 Taiwan Semiconductor Manufacturing Company, Ltd. Spacer for semiconductor structure contact
US10026750B1 (en) * 2017-11-08 2018-07-17 Macronix International Co., Ltd. Memory device and method for operating the same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0817948A (ja) 1994-06-30 1996-01-19 Toshiba Corp 半導体装置及びその製造方法
KR100278647B1 (ko) * 1996-10-05 2001-02-01 윤종용 불휘발성 메모리소자 및 그 제조방법
US6165845A (en) * 1999-04-26 2000-12-26 Taiwan Semiconductor Manufacturing Company Method to fabricate poly tip in split-gate flash
US6108242A (en) * 1999-08-10 2000-08-22 Taiwan Semiconductor Mfg. Co. Ltd. Flash memory with split gate structure and method of fabricating the same

Similar Documents

Publication Publication Date Title
JP2001160595A5 (enExample)
US8017991B2 (en) Non-volatile memory device and methods of operating and fabricating the same
CN100435338C (zh) 鳍形场效晶体管半导体存储器的字线和位线排列
JP2002110825A5 (enExample)
JP2001168306A5 (enExample)
KR960043226A (ko) 디램 셀(dram) 및 그 제조 방법
JPH1154732A5 (enExample)
KR970067903A (ko) 불휘발성 메모리소자, 그 제조방법 및 구동방법
JP2005079165A5 (enExample)
EP1777752A3 (en) Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements
CN110323224A (zh) 三维半导体存储器件
CN111627978A (zh) 晶体管、包含该晶体管的三维存储器元件及其制造方法
JP2002100689A5 (enExample)
JP2002151665A5 (ja) 半導体集積回路装置
KR100638426B1 (ko) 플래시 메모리 셀 및 그 제조 방법
EP1139426A3 (en) Nonvolatile semiconductor memory and method of manufacturing the same
JP2003152116A5 (enExample)
JP2004111892A (ja) フラッシュメモリ装置及びその製造方法ならびにフラッシュメモリ装置用トランジスタ
KR880011808A (ko) 불휘발성 반도체기억장치
JP2003188287A5 (enExample)
JP2006121094A5 (enExample)
KR900007118A (ko) 불휘발성 반도체기억장치 및 그 제조방법
US20070096222A1 (en) Low voltage nanovolatile memory cell with electrically transparent control gate
JP2002289706A5 (enExample)
JP2004193598A5 (enExample)