JPH1154732A5 - - Google Patents

Info

Publication number
JPH1154732A5
JPH1154732A5 JP1998113413A JP11341398A JPH1154732A5 JP H1154732 A5 JPH1154732 A5 JP H1154732A5 JP 1998113413 A JP1998113413 A JP 1998113413A JP 11341398 A JP11341398 A JP 11341398A JP H1154732 A5 JPH1154732 A5 JP H1154732A5
Authority
JP
Japan
Prior art keywords
memory cell
floating gate
semiconductor substrate
buried
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1998113413A
Other languages
English (en)
Japanese (ja)
Other versions
JP4330670B2 (ja
JPH1154732A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP11341398A priority Critical patent/JP4330670B2/ja
Priority claimed from JP11341398A external-priority patent/JP4330670B2/ja
Priority to US09/090,625 priority patent/US6034894A/en
Publication of JPH1154732A publication Critical patent/JPH1154732A/ja
Priority to US09/503,459 priority patent/US6222769B1/en
Publication of JPH1154732A5 publication Critical patent/JPH1154732A5/ja
Application granted granted Critical
Publication of JP4330670B2 publication Critical patent/JP4330670B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP11341398A 1997-06-06 1998-04-23 不揮発性半導体記憶装置 Expired - Fee Related JP4330670B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP11341398A JP4330670B2 (ja) 1997-06-06 1998-04-23 不揮発性半導体記憶装置
US09/090,625 US6034894A (en) 1997-06-06 1998-06-04 Nonvolatile semiconductor storage device having buried electrode within shallow trench
US09/503,459 US6222769B1 (en) 1997-06-06 2000-02-14 Nonvolatile semiconductor storage device having buried electrode within shallow trench

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP14968197 1997-06-06
JP9-149681 1997-06-06
JP11341398A JP4330670B2 (ja) 1997-06-06 1998-04-23 不揮発性半導体記憶装置

Publications (3)

Publication Number Publication Date
JPH1154732A JPH1154732A (ja) 1999-02-26
JPH1154732A5 true JPH1154732A5 (enExample) 2005-09-29
JP4330670B2 JP4330670B2 (ja) 2009-09-16

Family

ID=26452399

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11341398A Expired - Fee Related JP4330670B2 (ja) 1997-06-06 1998-04-23 不揮発性半導体記憶装置

Country Status (2)

Country Link
US (1) US6034894A (enExample)
JP (1) JP4330670B2 (enExample)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6147377A (en) * 1998-03-30 2000-11-14 Advanced Micro Devices, Inc. Fully recessed semiconductor device
FI981301A0 (fi) * 1998-06-08 1998-06-08 Valtion Teknillinen Prosessivaihtelujen eliminointimenetelmä u-MOSFET-rakenteissa
US6091104A (en) 1999-03-24 2000-07-18 Chen; Chiou-Feng Flash memory cell with self-aligned gates and fabrication process
US6281050B1 (en) * 1999-03-15 2001-08-28 Kabushiki Kaisha Toshiba Manufacturing method of a semiconductor device and a nonvolatile semiconductor storage device
US6901006B1 (en) * 1999-07-14 2005-05-31 Hitachi, Ltd. Semiconductor integrated circuit device including first, second and third gates
US6222227B1 (en) * 1999-08-09 2001-04-24 Actrans System Inc. Memory cell with self-aligned floating gate and separate select gate, and fabrication process
US6461915B1 (en) * 1999-09-01 2002-10-08 Micron Technology, Inc. Method and structure for an improved floating gate memory cell
JP3971873B2 (ja) * 1999-09-10 2007-09-05 株式会社ルネサステクノロジ 半導体集積回路装置およびその製造方法
KR20010036336A (ko) * 1999-10-07 2001-05-07 한신혁 반도체 디바이스의 메모리 셀 제조 방법
GB9928285D0 (en) * 1999-11-30 2000-01-26 Koninkl Philips Electronics Nv Manufacture of trench-gate semiconductor devices
US6426896B1 (en) 2000-05-22 2002-07-30 Actrans System Inc. Flash memory cell with contactless bit line, and process of fabrication
US6887753B2 (en) * 2001-02-28 2005-05-03 Micron Technology, Inc. Methods of forming semiconductor circuitry, and semiconductor circuit constructions
US6762092B2 (en) * 2001-08-08 2004-07-13 Sandisk Corporation Scalable self-aligned dual floating gate memory cell array and methods of forming the array
US6551881B1 (en) * 2001-10-01 2003-04-22 Koninklijke Philips Electronics N.V. Self-aligned dual-oxide umosfet device and a method of fabricating same
US6664191B1 (en) 2001-10-09 2003-12-16 Advanced Micro Devices, Inc. Non self-aligned shallow trench isolation process with disposable space to define sub-lithographic poly space
JP4027656B2 (ja) 2001-12-10 2007-12-26 シャープ株式会社 不揮発性半導体記憶装置及びその動作方法
US6894930B2 (en) * 2002-06-19 2005-05-17 Sandisk Corporation Deep wordline trench to shield cross coupling between adjacent cells for scaled NAND
US6885586B2 (en) * 2002-09-19 2005-04-26 Actrans System Inc. Self-aligned split-gate NAND flash memory and fabrication process
JP2004241558A (ja) 2003-02-05 2004-08-26 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法、半導体集積回路及び不揮発性半導体記憶装置システム
DE10321742A1 (de) * 2003-05-14 2004-12-09 Infineon Technologies Ag Integrierte Schaltungsanordnung mit Isoliergraben und Feldeffekttransistor sowie Herstellungsverfahren
JP3854247B2 (ja) * 2003-05-30 2006-12-06 株式会社東芝 不揮発性半導体記憶装置
DE10324612B4 (de) * 2003-05-30 2005-08-11 Infineon Technologies Ag Halbleiterspeicher mit Charge-Trapping-Speicherzellen und Virtual-Ground-Architektur
KR100598108B1 (ko) 2004-09-23 2006-07-07 삼성전자주식회사 측벽 트랜지스터를 가지는 비휘발성 메모리 소자 및 그제조방법
TWI246749B (en) * 2005-03-08 2006-01-01 Powerchip Semiconductor Corp Method of fabricating a non-volatile memory
US7750384B2 (en) * 2005-06-29 2010-07-06 Hynix Semiconductor Inc. Flash memory device having intergated plug
KR100680455B1 (ko) * 2005-06-30 2007-02-08 주식회사 하이닉스반도체 Ｎａｎｄ형 플래쉬 메모리 소자, 그 제조 방법 및 그 구동방법
JP2009059931A (ja) * 2007-08-31 2009-03-19 Toshiba Corp 不揮発性半導体記憶装置
JP4818241B2 (ja) * 2007-10-22 2011-11-16 株式会社東芝 不揮発性半導体記憶装置
US7788550B2 (en) * 2007-12-17 2010-08-31 Atmel Rousset S.A.S. Redundant bit patterns for column defects coding
KR101001257B1 (ko) 2008-10-06 2010-12-14 주식회사 동부하이텍 이이피롬 및 그의 제조방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4979004A (en) * 1988-01-29 1990-12-18 Texas Instruments Incorporated Floating gate memory cell and device
JP3238576B2 (ja) * 1994-08-19 2001-12-17 株式会社東芝 不揮発性半導体記憶装置
JPH08316348A (ja) * 1995-03-14 1996-11-29 Toshiba Corp 半導体装置およびその製造方法
KR100253868B1 (ko) * 1995-11-13 2000-05-01 니시무로 타이죠 불휘발성 반도체기억장치

Similar Documents

Publication Publication Date Title
JPH1154732A5 (enExample)
US20250232822A1 (en) Multi-gate nor flash thin-film transistor strings arranged in stacked horizontal active strips with vertical control gates
US7982256B2 (en) Semiconductor memory device having DRAM cell mode and non-volatile memory cell mode and operation method thereof
US8792280B2 (en) Strings of memory cells having string select gates, memory devices incorporating such strings, and methods of accessing and forming the same
CN212136451U (zh) 存储器
US9036421B2 (en) Strings of memory cells having string select gates, memory devices incorporating such strings, and methods of accessing and forming the same
US6504755B1 (en) Semiconductor memory device
KR102668014B1 (ko) 비휘발성 메모리 장치, 수직형 낸드 플래시 메모리 장치 및 이를 포함하는 에스에스디 장치
JP2008160113A (ja) 不揮発性メモリ素子及びその動作方法
KR101398666B1 (ko) 플래시 메모리 장치 및 이의 구동 방법
US11812609B2 (en) Three-dimensional semiconductor device having a first main separation structure and a second main separation structure on a lower structure
US6532165B1 (en) Nonvolatile semiconductor memory and driving method thereof
JP2006093695A (ja) 不揮発性メモリ素子及びその形成方法
JP2008077826A (ja) 不揮発性記憶装置及びその動作方法
US20050162885A1 (en) Nonvolatile semiconductor memory device
CN116761426A (zh) 存储单元、存储阵列及存储阵列的制备方法
US20060226468A1 (en) Split gate multi-bit memory cell
KR100682211B1 (ko) 불휘발성 강유전체 메모리 장치
US7015535B2 (en) Nonvolatile semiconductor memory device
US20250351350A1 (en) Semiconductor memory device
KR100636926B1 (ko) 불휘발성 강유전체 메모리 장치
KR100669554B1 (ko) 불휘발성 강유전체 메모리 장치
KR100720223B1 (ko) 불휘발성 강유전체 메모리 장치
WO2006080081A1 (ja) 不揮発性メモリ及びその制御方法
EP3357066B1 (en) Multi-gate nor flash thin-film transistor strings arranged in stacked horizontal active strips with vertical control gates