JP3878374B2 - 不揮発性半導体記憶装置 - Google Patents

不揮発性半導体記憶装置 Download PDF

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Publication number
JP3878374B2
JP3878374B2 JP34235899A JP34235899A JP3878374B2 JP 3878374 B2 JP3878374 B2 JP 3878374B2 JP 34235899 A JP34235899 A JP 34235899A JP 34235899 A JP34235899 A JP 34235899A JP 3878374 B2 JP3878374 B2 JP 3878374B2
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JP
Japan
Prior art keywords
element isolation
conductive layer
charge storage
width
less
Prior art date
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Expired - Fee Related
Application number
JP34235899A
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English (en)
Japanese (ja)
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JP2001160595A (ja
JP2001160595A5 (enExample
Inventor
和裕 清水
理一郎 白田
誠一 有留
直樹 小井土
裕久 飯塚
弘昭 角田
直 井口
一仁 成田
国博 寺坂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
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Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP34235899A priority Critical patent/JP3878374B2/ja
Priority to US09/725,564 priority patent/US6462373B2/en
Publication of JP2001160595A publication Critical patent/JP2001160595A/ja
Publication of JP2001160595A5 publication Critical patent/JP2001160595A5/ja
Application granted granted Critical
Publication of JP3878374B2 publication Critical patent/JP3878374B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/43—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP34235899A 1999-12-01 1999-12-01 不揮発性半導体記憶装置 Expired - Fee Related JP3878374B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP34235899A JP3878374B2 (ja) 1999-12-01 1999-12-01 不揮発性半導体記憶装置
US09/725,564 US6462373B2 (en) 1999-12-01 2000-11-30 Nonvolatile semiconductor memory device having tapered portion on side wall of charge accumulation layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34235899A JP3878374B2 (ja) 1999-12-01 1999-12-01 不揮発性半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2001160595A JP2001160595A (ja) 2001-06-12
JP2001160595A5 JP2001160595A5 (enExample) 2005-04-28
JP3878374B2 true JP3878374B2 (ja) 2007-02-07

Family

ID=18353115

Family Applications (1)

Application Number Title Priority Date Filing Date
JP34235899A Expired - Fee Related JP3878374B2 (ja) 1999-12-01 1999-12-01 不揮発性半導体記憶装置

Country Status (2)

Country Link
US (1) US6462373B2 (enExample)
JP (1) JP3878374B2 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002246485A (ja) * 2001-02-13 2002-08-30 Mitsubishi Electric Corp 不揮発性半導体記憶装置およびその製造方法
US20020130357A1 (en) * 2001-03-14 2002-09-19 Hurley Kelly T. Self-aligned floating gate flash cell system and method
JP2003007869A (ja) * 2001-06-26 2003-01-10 Fujitsu Ltd 半導体装置及びその製造方法
JP4237561B2 (ja) * 2003-07-04 2009-03-11 株式会社東芝 半導体記憶装置及びその製造方法
US6825526B1 (en) * 2004-01-16 2004-11-30 Advanced Micro Devices, Inc. Structure for increasing drive current in a memory array and related method
JP2007005380A (ja) * 2005-06-21 2007-01-11 Toshiba Corp 半導体装置
US7842618B2 (en) * 2005-08-01 2010-11-30 Spansion Llc System and method for improving mesa width in a semiconductor device
JP4906329B2 (ja) * 2005-12-02 2012-03-28 ラピスセミコンダクタ株式会社 不揮発性半導体記憶装置及びその製造方法
JP2008016777A (ja) * 2006-07-10 2008-01-24 Toshiba Corp 半導体装置およびその製造方法
JP4557992B2 (ja) * 2007-02-13 2010-10-06 株式会社東芝 半導体装置
US7652335B2 (en) * 2007-10-17 2010-01-26 Toshiba America Electronics Components, Inc. Reversely tapered contact structure compatible with dual stress liner process
KR101402890B1 (ko) * 2007-11-30 2014-06-27 삼성전자주식회사 비휘발성 기억 소자 및 그 형성 방법
WO2011097592A1 (en) 2010-02-07 2011-08-11 Zeno Semiconductor , Inc. Semiconductor memory device having electrically floating body transistor, and having both volatile and non-volatile functionality and method
US8692353B2 (en) * 2011-09-02 2014-04-08 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method
US8877614B2 (en) 2011-10-13 2014-11-04 Taiwan Semiconductor Manufacturing Company, Ltd. Spacer for semiconductor structure contact
US10026750B1 (en) * 2017-11-08 2018-07-17 Macronix International Co., Ltd. Memory device and method for operating the same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0817948A (ja) 1994-06-30 1996-01-19 Toshiba Corp 半導体装置及びその製造方法
KR100278647B1 (ko) * 1996-10-05 2001-02-01 윤종용 불휘발성 메모리소자 및 그 제조방법
US6165845A (en) * 1999-04-26 2000-12-26 Taiwan Semiconductor Manufacturing Company Method to fabricate poly tip in split-gate flash
US6108242A (en) * 1999-08-10 2000-08-22 Taiwan Semiconductor Mfg. Co. Ltd. Flash memory with split gate structure and method of fabricating the same

Also Published As

Publication number Publication date
US6462373B2 (en) 2002-10-08
US20010019508A1 (en) 2001-09-06
JP2001160595A (ja) 2001-06-12

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