JP2002289706A5 - - Google Patents

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Publication number
JP2002289706A5
JP2002289706A5 JP2001085821A JP2001085821A JP2002289706A5 JP 2002289706 A5 JP2002289706 A5 JP 2002289706A5 JP 2001085821 A JP2001085821 A JP 2001085821A JP 2001085821 A JP2001085821 A JP 2001085821A JP 2002289706 A5 JP2002289706 A5 JP 2002289706A5
Authority
JP
Japan
Prior art keywords
memory cell
insulating film
gate
source
impurity concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001085821A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002289706A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2001085821A priority Critical patent/JP2002289706A/ja
Priority claimed from JP2001085821A external-priority patent/JP2002289706A/ja
Priority to US10/058,343 priority patent/US6835987B2/en
Publication of JP2002289706A publication Critical patent/JP2002289706A/ja
Priority to US10/942,013 priority patent/US6949794B2/en
Priority to US11/225,094 priority patent/US7122869B2/en
Publication of JP2002289706A5 publication Critical patent/JP2002289706A5/ja
Priority to US11/538,944 priority patent/US7274075B2/en
Priority to US11/857,934 priority patent/US7737508B2/en
Priority to US12/779,357 priority patent/US8338252B2/en
Pending legal-status Critical Current

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JP2001085821A 2001-01-31 2001-03-23 不揮発性半導体記憶装置およびその製造方法 Pending JP2002289706A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2001085821A JP2002289706A (ja) 2001-03-23 2001-03-23 不揮発性半導体記憶装置およびその製造方法
US10/058,343 US6835987B2 (en) 2001-01-31 2002-01-30 Non-volatile semiconductor memory device in which selection gate transistors and memory cells have different structures
US10/942,013 US6949794B2 (en) 2001-01-31 2004-09-16 Non-volatile semiconductor memory device in which selection gate transistors and memory cells have different structures
US11/225,094 US7122869B2 (en) 2001-01-31 2005-09-14 Nonvolatile semiconductor memory device in which selection transistors and memory transistors have different impurity concentration distributions
US11/538,944 US7274075B2 (en) 2001-01-31 2006-10-05 Nonvolatile semiconductor memory device having pair of selection transistors with different source and drain impurity concentrations and with different channel dopant concentrations
US11/857,934 US7737508B2 (en) 2001-01-31 2007-09-19 Non-volatile semiconductor memory device and method of manufacturing the same
US12/779,357 US8338252B2 (en) 2001-01-31 2010-05-13 Non-volatile semiconductor memory device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001085821A JP2002289706A (ja) 2001-03-23 2001-03-23 不揮発性半導体記憶装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2002289706A JP2002289706A (ja) 2002-10-04
JP2002289706A5 true JP2002289706A5 (enExample) 2005-10-27

Family

ID=18941272

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001085821A Pending JP2002289706A (ja) 2001-01-31 2001-03-23 不揮発性半導体記憶装置およびその製造方法

Country Status (1)

Country Link
JP (1) JP2002289706A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100604857B1 (ko) * 2004-05-27 2006-07-26 삼성전자주식회사 바이트 단위로 소거되는 이이피롬 소자 및 그 제조방법
JP4657681B2 (ja) * 2004-06-03 2011-03-23 シャープ株式会社 半導体記憶装置およびその製造方法並びに携帯電子機器
KR100822807B1 (ko) 2006-10-20 2008-04-18 삼성전자주식회사 플래시 기억 장치 및 그 제조 방법
JP5052580B2 (ja) * 2009-09-30 2012-10-17 株式会社東芝 半導体装置及びその製造方法

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