JP2002289706A - 不揮発性半導体記憶装置およびその製造方法 - Google Patents

不揮発性半導体記憶装置およびその製造方法

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Publication number
JP2002289706A
JP2002289706A JP2001085821A JP2001085821A JP2002289706A JP 2002289706 A JP2002289706 A JP 2002289706A JP 2001085821 A JP2001085821 A JP 2001085821A JP 2001085821 A JP2001085821 A JP 2001085821A JP 2002289706 A JP2002289706 A JP 2002289706A
Authority
JP
Japan
Prior art keywords
memory cell
gate
select gate
insulating film
impurity concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001085821A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002289706A5 (enExample
Inventor
Toshitake Yaegashi
利武 八重樫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2001085821A priority Critical patent/JP2002289706A/ja
Priority to US10/058,343 priority patent/US6835987B2/en
Publication of JP2002289706A publication Critical patent/JP2002289706A/ja
Priority to US10/942,013 priority patent/US6949794B2/en
Priority to US11/225,094 priority patent/US7122869B2/en
Publication of JP2002289706A5 publication Critical patent/JP2002289706A5/ja
Priority to US11/538,944 priority patent/US7274075B2/en
Priority to US11/857,934 priority patent/US7737508B2/en
Priority to US12/779,357 priority patent/US8338252B2/en
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP2001085821A 2001-01-31 2001-03-23 不揮発性半導体記憶装置およびその製造方法 Pending JP2002289706A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2001085821A JP2002289706A (ja) 2001-03-23 2001-03-23 不揮発性半導体記憶装置およびその製造方法
US10/058,343 US6835987B2 (en) 2001-01-31 2002-01-30 Non-volatile semiconductor memory device in which selection gate transistors and memory cells have different structures
US10/942,013 US6949794B2 (en) 2001-01-31 2004-09-16 Non-volatile semiconductor memory device in which selection gate transistors and memory cells have different structures
US11/225,094 US7122869B2 (en) 2001-01-31 2005-09-14 Nonvolatile semiconductor memory device in which selection transistors and memory transistors have different impurity concentration distributions
US11/538,944 US7274075B2 (en) 2001-01-31 2006-10-05 Nonvolatile semiconductor memory device having pair of selection transistors with different source and drain impurity concentrations and with different channel dopant concentrations
US11/857,934 US7737508B2 (en) 2001-01-31 2007-09-19 Non-volatile semiconductor memory device and method of manufacturing the same
US12/779,357 US8338252B2 (en) 2001-01-31 2010-05-13 Non-volatile semiconductor memory device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001085821A JP2002289706A (ja) 2001-03-23 2001-03-23 不揮発性半導体記憶装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2002289706A true JP2002289706A (ja) 2002-10-04
JP2002289706A5 JP2002289706A5 (enExample) 2005-10-27

Family

ID=18941272

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001085821A Pending JP2002289706A (ja) 2001-01-31 2001-03-23 不揮発性半導体記憶装置およびその製造方法

Country Status (1)

Country Link
JP (1) JP2002289706A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005340833A (ja) * 2004-05-27 2005-12-08 Samsung Electronics Co Ltd バイト単位で消去されるｅｅｐｒｏｍ素子及びその製造方法
JP2006019680A (ja) * 2004-06-03 2006-01-19 Sharp Corp 半導体記憶装置およびその製造方法並びに携帯電子機器
KR100822807B1 (ko) 2006-10-20 2008-04-18 삼성전자주식회사 플래시 기억 장치 및 그 제조 방법
JP2011077405A (ja) * 2009-09-30 2011-04-14 Toshiba Corp 半導体装置及びその製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005340833A (ja) * 2004-05-27 2005-12-08 Samsung Electronics Co Ltd バイト単位で消去されるｅｅｐｒｏｍ素子及びその製造方法
JP2006019680A (ja) * 2004-06-03 2006-01-19 Sharp Corp 半導体記憶装置およびその製造方法並びに携帯電子機器
KR100822807B1 (ko) 2006-10-20 2008-04-18 삼성전자주식회사 플래시 기억 장치 및 그 제조 방법
JP2011077405A (ja) * 2009-09-30 2011-04-14 Toshiba Corp 半導体装置及びその製造方法

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