JP2001127292A - 高密度トレンチゲートパワーｍｏｓｆｅｔ - Google Patents

高密度トレンチゲートパワーｍｏｓｆｅｔ

Info

Publication number
JP2001127292A
JP2001127292A JP2000016475A JP2000016475A JP2001127292A JP 2001127292 A JP2001127292 A JP 2001127292A JP 2000016475 A JP2000016475 A JP 2000016475A JP 2000016475 A JP2000016475 A JP 2000016475A JP 2001127292 A JP2001127292 A JP 2001127292A
Authority
JP
Japan
Prior art keywords
junction
region
trench
power mosfet
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000016475A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001127292A5 (cg-RX-API-DMAC7.html
Inventor
Jacek Korec
ジャセック・コレック
Mohamed N Darwish
モハメッド・エヌ・ダーウィッシュ
Dorman C Pitzer
ドーマン・シー・ピッツァー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Vishay Siliconix Inc
Original Assignee
Siliconix Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siliconix Inc filed Critical Siliconix Inc
Publication of JP2001127292A publication Critical patent/JP2001127292A/ja
Publication of JP2001127292A5 publication Critical patent/JP2001127292A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/108—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having localised breakdown regions, e.g. built-in avalanching regions 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H10D84/143—VDMOS having built-in components the built-in components being PN junction diodes
    • H10D84/144—VDMOS having built-in components the built-in components being PN junction diodes in antiparallel diode configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H10D84/148—VDMOS having built-in components the built-in components being breakdown diodes, e.g. Zener diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2000016475A 1999-10-27 2000-01-26 高密度トレンチゲートパワーｍｏｓｆｅｔ Pending JP2001127292A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/428,299 US6348712B1 (en) 1999-10-27 1999-10-27 High density trench-gated power MOSFET
US09/428299 1999-10-27

Publications (2)

Publication Number Publication Date
JP2001127292A true JP2001127292A (ja) 2001-05-11
JP2001127292A5 JP2001127292A5 (cg-RX-API-DMAC7.html) 2005-09-29

Family

ID=23698310

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000016475A Pending JP2001127292A (ja) 1999-10-27 2000-01-26 高密度トレンチゲートパワーｍｏｓｆｅｔ

Country Status (3)

Country Link
US (2) US6348712B1 (cg-RX-API-DMAC7.html)
EP (2) EP1988579A3 (cg-RX-API-DMAC7.html)
JP (1) JP2001127292A (cg-RX-API-DMAC7.html)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005057050A (ja) * 2003-08-04 2005-03-03 Renesas Technology Corp 半導体装置およびその製造方法
JP2006310836A (ja) * 2006-04-05 2006-11-09 Hvvi Semiconductors Inc パワー半導体装置およびそのための方法
JP2006310838A (ja) * 2006-04-05 2006-11-09 Hvvi Semiconductors Inc パワー半導体装置およびそのための方法
JP2007116160A (ja) * 2005-10-18 2007-05-10 Internatl Rectifier Corp 大容量性負荷のためのトレンチｉｇｂｔ
JP2007173878A (ja) * 2007-03-28 2007-07-05 Toshiba Corp 半導体装置
JP2007531988A (ja) * 2004-03-01 2007-11-08 インターナショナル レクティファイアー コーポレイション トレンチデバイスのための自動整合された接点構造体
JP2008218711A (ja) * 2007-03-05 2008-09-18 Renesas Technology Corp 半導体装置およびその製造方法、ならびに電源装置
JP2008244466A (ja) * 2007-02-27 2008-10-09 Matsushita Electric Ind Co Ltd 半導体装置
JP2009525597A (ja) * 2006-01-30 2009-07-09 フェアチャイルド・セミコンダクター・コーポレーション 高セル密度トレンチｍｏｓｆｅｔにおける多様なメサ寸法
JP2010098326A (ja) * 2009-12-21 2010-04-30 Renesas Technology Corp 半導体装置およびその製造方法、ならびに電源装置
US7847369B2 (en) 2004-01-10 2010-12-07 Hvvi Semiconductors, Inc. Radio frequency power semiconductor device comprising matrix of cavities as dielectric isolation structure
JP5047805B2 (ja) * 2005-11-22 2012-10-10 新電元工業株式会社 トレンチゲートパワー半導体装置
US8530963B2 (en) 2005-01-06 2013-09-10 Estivation Properties Llc Power semiconductor device and method therefor

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6472678B1 (en) * 2000-06-16 2002-10-29 General Semiconductor, Inc. Trench MOSFET with double-diffused body profile
US6309929B1 (en) * 2000-09-22 2001-10-30 Industrial Technology Research Institute And Genetal Semiconductor Of Taiwan, Ltd. Method of forming trench MOS device and termination structure
US7384854B2 (en) * 2002-03-08 2008-06-10 International Business Machines Corporation Method of forming low capacitance ESD robust diodes
JP4209260B2 (ja) * 2003-06-04 2009-01-14 Ｎｅｃエレクトロニクス株式会社 半導体装置およびその製造方法
JP2006196545A (ja) * 2005-01-11 2006-07-27 Toshiba Corp 半導体装置の製造方法
JP5073991B2 (ja) * 2006-08-23 2012-11-14 オンセミコンダクター・トレーディング・リミテッド 絶縁ゲート型半導体装置
US9437729B2 (en) * 2007-01-08 2016-09-06 Vishay-Siliconix High-density power MOSFET with planarized metalization
US9947770B2 (en) 2007-04-03 2018-04-17 Vishay-Siliconix Self-aligned trench MOSFET and method of manufacture
SE532625C2 (sv) * 2007-04-11 2010-03-09 Transic Ab Halvledarkomponent i kiselkarbid
US9484451B2 (en) 2007-10-05 2016-11-01 Vishay-Siliconix MOSFET active area and edge termination area charge balance
US20100171543A1 (en) * 2009-01-08 2010-07-08 Ciclon Semiconductor Device Corp. Packaged power switching device
US20100237439A1 (en) * 2009-03-18 2010-09-23 Ming-Cheng Lee High-voltage metal-dielectric-semiconductor device and method of the same
US9443974B2 (en) 2009-08-27 2016-09-13 Vishay-Siliconix Super junction trench power MOSFET device fabrication
US9431530B2 (en) * 2009-10-20 2016-08-30 Vishay-Siliconix Super-high density trench MOSFET
US9842911B2 (en) 2012-05-30 2017-12-12 Vishay-Siliconix Adaptive charge balanced edge termination
US9887259B2 (en) 2014-06-23 2018-02-06 Vishay-Siliconix Modulated super junction power MOSFET devices
EP4565029A3 (en) 2014-08-19 2025-07-30 Vishay-Siliconix Mosfet semiconductor device
WO2016028944A1 (en) 2014-08-19 2016-02-25 Vishay-Siliconix Super-junction metal oxide semiconductor field effect transistor
US10522674B2 (en) 2016-05-18 2019-12-31 Rohm Co., Ltd. Semiconductor with unified transistor structure and voltage regulator diode
US10692863B2 (en) 2016-09-30 2020-06-23 Rohm Co., Ltd. Semiconductor device and semiconductor package
DE102017108738B4 (de) * 2017-04-24 2022-01-27 Infineon Technologies Ag SiC-HALBLEITERVORRICHTUNG MIT EINEM VERSATZ IN EINEM GRABENBODEN UND HERSTELLUNGSVERFAHREN HIERFÜR
CN109256427A (zh) * 2018-09-19 2019-01-22 电子科技大学 一种集成肖特基二极管的SiC MOSFET器件
TWI739252B (zh) * 2019-12-25 2021-09-11 杰力科技股份有限公司 溝槽式mosfet元件及其製造方法
US12495577B2 (en) 2022-08-17 2025-12-09 Analog Devices, Inc. Self-aligned silicide gate for discrete shielded-gate trench power MOSFET
CN115394836A (zh) * 2022-09-19 2022-11-25 华虹半导体(无锡)有限公司 超级结沟槽栅终端结构及其制备方法

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* Cited by examiner, † Cited by third party
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JPS5939071A (ja) * 1982-08-27 1984-03-03 Nissan Motor Co Ltd 縦型パワ−ｍｏｓ・ｆｅｔ
JPH08250731A (ja) * 1994-12-30 1996-09-27 Siliconix Inc 高いブレークダウン電圧と低いオン抵抗を兼ね備えたトレンチ型ｍｏｓｆｅｔ
JPH09289304A (ja) * 1996-04-19 1997-11-04 Rohm Co Ltd 半導体装置
JPH11501458A (ja) * 1995-08-21 1999-02-02 シリコニックス・インコーポレイテッド 低減したオン抵抗と耐圧性を有する埋込層を備えたトレンチ形電界効果トランジスタ
JPH1145998A (ja) * 1997-07-28 1999-02-16 Toyota Central Res & Dev Lab Inc 絶縁ゲート型半導体装置
JPH11243196A (ja) * 1997-11-14 1999-09-07 Fairchild Semiconductor Corp 電界効果トランジスタ及びその製造方法

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US5072266A (en) 1988-12-27 1991-12-10 Siliconix Incorporated Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry
JPH0493084A (ja) * 1990-08-08 1992-03-25 Matsushita Electron Corp 半導体装置およびその製造方法
GB9216599D0 (en) 1992-08-05 1992-09-16 Philips Electronics Uk Ltd A semiconductor device comprising a vertical insulated gate field effect device and a method of manufacturing such a device
US5410170A (en) * 1993-04-14 1995-04-25 Siliconix Incorporated DMOS power transistors with reduced number of contacts using integrated body-source connections
JP2987328B2 (ja) * 1995-06-02 1999-12-06 シリコニックス・インコーポレイテッド 双方向電流阻止機能を備えたトレンチ型パワーｍｏｓｆｅｔ
US6049108A (en) * 1995-06-02 2000-04-11 Siliconix Incorporated Trench-gated MOSFET with bidirectional voltage clamping
US5689128A (en) * 1995-08-21 1997-11-18 Siliconix Incorporated High density trenched DMOS transistor
KR100360079B1 (ko) * 1995-11-02 2003-03-15 내셔널 세미콘덕터 코포레이션 견고성을향상시키는절연게이트반도체디바이스의제조방법
US6285060B1 (en) * 1999-12-30 2001-09-04 Siliconix Incorporated Barrier accumulation-mode MOSFET

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5939071A (ja) * 1982-08-27 1984-03-03 Nissan Motor Co Ltd 縦型パワ−ｍｏｓ・ｆｅｔ
JPH08250731A (ja) * 1994-12-30 1996-09-27 Siliconix Inc 高いブレークダウン電圧と低いオン抵抗を兼ね備えたトレンチ型ｍｏｓｆｅｔ
JPH11501458A (ja) * 1995-08-21 1999-02-02 シリコニックス・インコーポレイテッド 低減したオン抵抗と耐圧性を有する埋込層を備えたトレンチ形電界効果トランジスタ
JPH09289304A (ja) * 1996-04-19 1997-11-04 Rohm Co Ltd 半導体装置
JPH1145998A (ja) * 1997-07-28 1999-02-16 Toyota Central Res & Dev Lab Inc 絶縁ゲート型半導体装置
JPH11243196A (ja) * 1997-11-14 1999-09-07 Fairchild Semiconductor Corp 電界効果トランジスタ及びその製造方法

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7981747B2 (en) 2003-08-04 2011-07-19 Renesas Electronics Corporation Semiconductor device and a method of manufacturing the same
JP2005057050A (ja) * 2003-08-04 2005-03-03 Renesas Technology Corp 半導体装置およびその製造方法
US9865590B2 (en) 2004-01-10 2018-01-09 Xenogenic Development Limited Liability Company Power semiconductor device and method therefor
US9177866B2 (en) 2004-01-10 2015-11-03 Estivation Properties Llc Power semiconductor device and method therefor
US9029946B2 (en) 2004-01-10 2015-05-12 Estivation Properties Llc Power semiconductor device and method therefor
US8471378B2 (en) 2004-01-10 2013-06-25 Estivation Properties Llc Power semiconductor device and method therefor
US7847369B2 (en) 2004-01-10 2010-12-07 Hvvi Semiconductors, Inc. Radio frequency power semiconductor device comprising matrix of cavities as dielectric isolation structure
US7898057B2 (en) 2004-01-10 2011-03-01 Hvvi Semiconductors, Inc. Radio frequency power semiconductor device package comprising dielectric platform and shielding plate
JP2007531988A (ja) * 2004-03-01 2007-11-08 インターナショナル レクティファイアー コーポレイション トレンチデバイスのための自動整合された接点構造体
US8530963B2 (en) 2005-01-06 2013-09-10 Estivation Properties Llc Power semiconductor device and method therefor
JP2007116160A (ja) * 2005-10-18 2007-05-10 Internatl Rectifier Corp 大容量性負荷のためのトレンチｉｇｂｔ
JP5047805B2 (ja) * 2005-11-22 2012-10-10 新電元工業株式会社 トレンチゲートパワー半導体装置
JP2009525597A (ja) * 2006-01-30 2009-07-09 フェアチャイルド・セミコンダクター・コーポレーション 高セル密度トレンチｍｏｓｆｅｔにおける多様なメサ寸法
JP2006310838A (ja) * 2006-04-05 2006-11-09 Hvvi Semiconductors Inc パワー半導体装置およびそのための方法
JP2006310836A (ja) * 2006-04-05 2006-11-09 Hvvi Semiconductors Inc パワー半導体装置およびそのための方法
JP2008244466A (ja) * 2007-02-27 2008-10-09 Matsushita Electric Ind Co Ltd 半導体装置
JP2008218711A (ja) * 2007-03-05 2008-09-18 Renesas Technology Corp 半導体装置およびその製造方法、ならびに電源装置
JP2007173878A (ja) * 2007-03-28 2007-07-05 Toshiba Corp 半導体装置
JP2010098326A (ja) * 2009-12-21 2010-04-30 Renesas Technology Corp 半導体装置およびその製造方法、ならびに電源装置

Also Published As

Publication number Publication date
EP1988579A3 (en) 2008-11-19
EP1096574A3 (en) 2003-03-12
EP1988579A2 (en) 2008-11-05
US6348712B1 (en) 2002-02-19
US20010045598A1 (en) 2001-11-29
US6534366B2 (en) 2003-03-18
EP1096574A2 (en) 2001-05-02

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