JP2001111056A5 - - Google Patents

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Publication number
JP2001111056A5
JP2001111056A5 JP1999285269A JP28526999A JP2001111056A5 JP 2001111056 A5 JP2001111056 A5 JP 2001111056A5 JP 1999285269 A JP1999285269 A JP 1999285269A JP 28526999 A JP28526999 A JP 28526999A JP 2001111056 A5 JP2001111056 A5 JP 2001111056A5
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JP
Japan
Prior art keywords
region
impurity
active element
active
conductive type
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Pending
Application number
JP1999285269A
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English (en)
Japanese (ja)
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JP2001111056A (ja
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Publication date
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Priority to JP28526999A priority Critical patent/JP2001111056A/ja
Priority claimed from JP28526999A external-priority patent/JP2001111056A/ja
Priority to US09/548,311 priority patent/US6545318B1/en
Priority to TW089120743A priority patent/TW468279B/zh
Priority to KR10-2000-0058446A priority patent/KR100397096B1/ko
Priority to CNB001306316A priority patent/CN1157794C/zh
Publication of JP2001111056A publication Critical patent/JP2001111056A/ja
Publication of JP2001111056A5 publication Critical patent/JP2001111056A5/ja
Pending legal-status Critical Current

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JP28526999A 1999-10-06 1999-10-06 半導体装置およびその製造方法 Pending JP2001111056A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP28526999A JP2001111056A (ja) 1999-10-06 1999-10-06 半導体装置およびその製造方法
US09/548,311 US6545318B1 (en) 1999-10-06 2000-04-12 Semiconductor device and manufacturing method thereof
TW089120743A TW468279B (en) 1999-10-06 2000-10-05 Semiconductor device and manufacturing method thereof
KR10-2000-0058446A KR100397096B1 (ko) 1999-10-06 2000-10-05 반도체 장치 및 그 제조 방법
CNB001306316A CN1157794C (zh) 1999-10-06 2000-10-08 半导体装置及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28526999A JP2001111056A (ja) 1999-10-06 1999-10-06 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2001111056A JP2001111056A (ja) 2001-04-20
JP2001111056A5 true JP2001111056A5 (enExample) 2006-11-16

Family

ID=17689325

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28526999A Pending JP2001111056A (ja) 1999-10-06 1999-10-06 半導体装置およびその製造方法

Country Status (5)

Country Link
US (1) US6545318B1 (enExample)
JP (1) JP2001111056A (enExample)
KR (1) KR100397096B1 (enExample)
CN (1) CN1157794C (enExample)
TW (1) TW468279B (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6787422B2 (en) * 2001-01-08 2004-09-07 Chartered Semiconductor Manufacturing Ltd. Method of body contact for SOI mosfet
JP2002246600A (ja) 2001-02-13 2002-08-30 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP4322453B2 (ja) * 2001-09-27 2009-09-02 株式会社東芝 半導体装置およびその製造方法
JP4139105B2 (ja) 2001-12-20 2008-08-27 株式会社ルネサステクノロジ 半導体装置の製造方法
JP2004072063A (ja) * 2002-06-10 2004-03-04 Nec Electronics Corp 半導体装置及びその製造方法
US20040060899A1 (en) * 2002-10-01 2004-04-01 Applied Materials, Inc. Apparatuses and methods for treating a silicon film
JP2004221301A (ja) * 2003-01-15 2004-08-05 Seiko Instruments Inc 半導体装置とその製造方法
EP1636851A1 (en) * 2003-06-11 2006-03-22 Koninklijke Philips Electronics N.V. Prevention of a parasitic channel in an integrated soi process
US20050072975A1 (en) * 2003-10-02 2005-04-07 Shiao-Shien Chen Partially depleted soi mosfet device
KR100574971B1 (ko) * 2004-02-17 2006-05-02 삼성전자주식회사 멀티-게이트 구조의 반도체 소자 및 그 제조 방법
US6998684B2 (en) * 2004-03-31 2006-02-14 International Business Machines Corporation High mobility plane CMOS SOI
WO2005106961A1 (en) * 2004-04-28 2005-11-10 Semiconductor Energy Laboratory Co., Ltd. Mos capacitor and semiconductor device
JP3898715B2 (ja) * 2004-09-09 2007-03-28 株式会社東芝 半導体装置およびその製造方法
JP2007184553A (ja) * 2005-12-06 2007-07-19 Sanyo Electric Co Ltd 半導体装置及びその製造方法
US7566630B2 (en) * 2006-01-18 2009-07-28 Intel Corporation Buried silicon dioxide / silicon nitride bi-layer insulators and methods of fabricating the same
EP1863090A1 (en) * 2006-06-01 2007-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US20080217727A1 (en) * 2007-03-11 2008-09-11 Skyworks Solutions, Inc. Radio frequency isolation for SOI transistors
JP5658916B2 (ja) * 2009-06-26 2015-01-28 株式会社半導体エネルギー研究所 半導体装置
JP2011029610A (ja) * 2009-06-26 2011-02-10 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
CN101872737A (zh) * 2010-01-28 2010-10-27 中国科学院上海微系统与信息技术研究所 一种抑制soi浮体效应的mos结构及其制作方法
US8461005B2 (en) * 2010-03-03 2013-06-11 United Microelectronics Corp. Method of manufacturing doping patterns
KR101870809B1 (ko) * 2016-06-21 2018-08-02 현대오트론 주식회사 전력 반도체 소자

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58124243A (ja) 1982-01-21 1983-07-23 Toshiba Corp 半導体装置の製造方法
US5145802A (en) * 1991-11-12 1992-09-08 United Technologies Corporation Method of making SOI circuit with buried connectors
US5463238A (en) * 1992-02-25 1995-10-31 Seiko Instruments Inc. CMOS structure with parasitic channel prevention
US5359219A (en) * 1992-12-04 1994-10-25 Texas Instruments Incorporated Silicon on insulator device comprising improved substrate doping
JP2806277B2 (ja) * 1994-10-13 1998-09-30 日本電気株式会社 半導体装置及びその製造方法
JPH08181316A (ja) * 1994-12-22 1996-07-12 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP3462301B2 (ja) 1995-06-16 2003-11-05 三菱電機株式会社 半導体装置及びその製造方法
JP3376204B2 (ja) 1996-02-15 2003-02-10 株式会社東芝 半導体装置
US5767549A (en) * 1996-07-03 1998-06-16 International Business Machines Corporation SOI CMOS structure
US5770875A (en) 1996-09-16 1998-06-23 International Business Machines Corporation Large value capacitor for SOI
US6133608A (en) * 1997-04-23 2000-10-17 International Business Machines Corporation SOI-body selective link method and apparatus
JPH1154758A (ja) * 1997-08-01 1999-02-26 Hitachi Ltd 半導体集積回路装置およびその製造方法
US6392277B1 (en) * 1997-11-21 2002-05-21 Hitachi, Ltd. Semiconductor device
DE69839780D1 (de) * 1997-12-19 2008-09-04 Advanced Micro Devices Inc Silizium auf eine isolator-konfiguration welche mit der massen-cmos-architektur kompatibel ist
US6121659A (en) * 1998-03-27 2000-09-19 International Business Machines Corporation Buried patterned conductor planes for semiconductor-on-insulator integrated circuit
US6072217A (en) * 1998-06-11 2000-06-06 Sun Microsystems, Inc. Tunable threshold SOI device using isolated well structure for back gate

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