JP2001092426A - 表示装置 - Google Patents
表示装置Info
- Publication number
- JP2001092426A JP2001092426A JP2000213575A JP2000213575A JP2001092426A JP 2001092426 A JP2001092426 A JP 2001092426A JP 2000213575 A JP2000213575 A JP 2000213575A JP 2000213575 A JP2000213575 A JP 2000213575A JP 2001092426 A JP2001092426 A JP 2001092426A
- Authority
- JP
- Japan
- Prior art keywords
- signal lines
- gate
- display device
- pixel
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000758 substrate Substances 0.000 claims abstract description 71
- 238000000034 method Methods 0.000 claims abstract description 45
- 239000004973 liquid crystal related substance Substances 0.000 claims description 91
- 239000004065 semiconductor Substances 0.000 claims description 30
- 230000015572 biosynthetic process Effects 0.000 claims description 15
- 239000003086 colorant Substances 0.000 claims description 7
- 239000010408 film Substances 0.000 description 108
- 239000010410 layer Substances 0.000 description 66
- 239000012535 impurity Substances 0.000 description 38
- 239000003990 capacitor Substances 0.000 description 17
- 238000010586 diagram Methods 0.000 description 17
- 229910021417 amorphous silicon Inorganic materials 0.000 description 15
- 239000011159 matrix material Substances 0.000 description 15
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 11
- 229910052698 phosphorus Inorganic materials 0.000 description 11
- 239000011574 phosphorus Substances 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 10
- 238000003860 storage Methods 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 238000001994 activation Methods 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 239000010936 titanium Substances 0.000 description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 8
- 230000004913 activation Effects 0.000 description 8
- 229910052796 boron Inorganic materials 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 8
- 125000004429 atom Chemical group 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 5
- 230000001747 exhibiting effect Effects 0.000 description 5
- 238000005984 hydrogenation reaction Methods 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- 230000004044 response Effects 0.000 description 5
- 238000005070 sampling Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- 239000002585 base Substances 0.000 description 4
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 4
- 230000003197 catalytic effect Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 210000002858 crystal cell Anatomy 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 238000005247 gettering Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 2
- 210000004027 cell Anatomy 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000005499 laser crystallization Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- -1 300 nm Substances 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 241001168730 Simo Species 0.000 description 1
- 239000004990 Smectic liquid crystal Substances 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000005620 antiferroelectricity Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 150000003278 haem Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Liquid Crystal Display Device Control (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000213575A JP2001092426A (ja) | 1999-07-21 | 2000-07-14 | 表示装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20637899 | 1999-07-21 | ||
| JP11-206378 | 1999-07-21 | ||
| JP2000213575A JP2001092426A (ja) | 1999-07-21 | 2000-07-14 | 表示装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007047763A Division JP2007193351A (ja) | 1999-07-21 | 2007-02-27 | 液晶表示装置及び電子機器 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001092426A true JP2001092426A (ja) | 2001-04-06 |
| JP2001092426A5 JP2001092426A5 (enExample) | 2007-08-09 |
Family
ID=26515624
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000213575A Withdrawn JP2001092426A (ja) | 1999-07-21 | 2000-07-14 | 表示装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001092426A (enExample) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003121812A (ja) * | 2001-10-11 | 2003-04-23 | Semiconductor Energy Lab Co Ltd | 半導体表示装置の設計方法、半導体表示装置の作製方法及び半導体表示装置 |
| JP2005055813A (ja) * | 2003-08-07 | 2005-03-03 | Nec Corp | 液晶表示装置及び液晶表示装置駆動方法 |
| JP2007193351A (ja) * | 1999-07-21 | 2007-08-02 | Semiconductor Energy Lab Co Ltd | 液晶表示装置及び電子機器 |
| US7995015B2 (en) | 1999-07-21 | 2011-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| JP2014500970A (ja) * | 2010-10-01 | 2014-01-16 | サムスン エレクトロニクス カンパニー リミテッド | バリアを用いる３ｄディスプレイ装置およびその駆動方法 |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01188181A (ja) * | 1988-01-22 | 1989-07-27 | Toshiba Corp | 液晶表示装置 |
| JPH02184816A (ja) * | 1989-01-11 | 1990-07-19 | Toshiba Corp | アクティブマトリックス形液晶表示装置 |
| JPH07175443A (ja) * | 1993-12-17 | 1995-07-14 | Citizen Watch Co Ltd | アクティブマトリクス型液晶表示装置の駆動方法 |
| JPH07234421A (ja) * | 1993-12-28 | 1995-09-05 | Canon Inc | アクティブマトリクス型液晶表示装置 |
| JPH0850277A (ja) * | 1995-06-16 | 1996-02-20 | Hitachi Ltd | 液晶表示装置 |
| JPH09204159A (ja) * | 1996-01-29 | 1997-08-05 | Canon Inc | 表示装置の駆動回路と駆動方法 |
| JPH10268258A (ja) * | 1997-03-27 | 1998-10-09 | Victor Co Of Japan Ltd | 液晶画像表示装置 |
| JPH1144885A (ja) * | 1997-05-26 | 1999-02-16 | Sharp Corp | 液晶パネルおよび液晶表示装置 |
| JPH1195261A (ja) * | 1997-09-19 | 1999-04-09 | Semiconductor Energy Lab Co Ltd | 液晶表示装置およびその作製方法 |
-
2000
- 2000-07-14 JP JP2000213575A patent/JP2001092426A/ja not_active Withdrawn
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01188181A (ja) * | 1988-01-22 | 1989-07-27 | Toshiba Corp | 液晶表示装置 |
| JPH02184816A (ja) * | 1989-01-11 | 1990-07-19 | Toshiba Corp | アクティブマトリックス形液晶表示装置 |
| JPH07175443A (ja) * | 1993-12-17 | 1995-07-14 | Citizen Watch Co Ltd | アクティブマトリクス型液晶表示装置の駆動方法 |
| JPH07234421A (ja) * | 1993-12-28 | 1995-09-05 | Canon Inc | アクティブマトリクス型液晶表示装置 |
| JPH0850277A (ja) * | 1995-06-16 | 1996-02-20 | Hitachi Ltd | 液晶表示装置 |
| JPH09204159A (ja) * | 1996-01-29 | 1997-08-05 | Canon Inc | 表示装置の駆動回路と駆動方法 |
| JPH10268258A (ja) * | 1997-03-27 | 1998-10-09 | Victor Co Of Japan Ltd | 液晶画像表示装置 |
| JPH1144885A (ja) * | 1997-05-26 | 1999-02-16 | Sharp Corp | 液晶パネルおよび液晶表示装置 |
| JPH1195261A (ja) * | 1997-09-19 | 1999-04-09 | Semiconductor Energy Lab Co Ltd | 液晶表示装置およびその作製方法 |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8018412B2 (en) | 1999-07-21 | 2011-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| JP2007193351A (ja) * | 1999-07-21 | 2007-08-02 | Semiconductor Energy Lab Co Ltd | 液晶表示装置及び電子機器 |
| US7995015B2 (en) | 1999-07-21 | 2011-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| US8004483B2 (en) | 1999-07-21 | 2011-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| US8362994B2 (en) | 1999-07-21 | 2013-01-29 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| US6946330B2 (en) | 2001-10-11 | 2005-09-20 | Semiconductor Energy Laboratory Co., Ltd. | Designing method and manufacturing method for semiconductor display device |
| US7498206B2 (en) | 2001-10-11 | 2009-03-03 | Semiconductor Energy Laboratory Co., Ltd. | Order receiving process for manufacturing a semiconductor display device |
| JP2003121812A (ja) * | 2001-10-11 | 2003-04-23 | Semiconductor Energy Lab Co Ltd | 半導体表示装置の設計方法、半導体表示装置の作製方法及び半導体表示装置 |
| JP2005055813A (ja) * | 2003-08-07 | 2005-03-03 | Nec Corp | 液晶表示装置及び液晶表示装置駆動方法 |
| CN100410997C (zh) * | 2003-08-07 | 2008-08-13 | 日本电气株式会社 | 液晶显示装置 |
| US7525527B2 (en) | 2003-08-07 | 2009-04-28 | Nec Corporation | Method for driving a liquid crystal display device |
| JP2014500970A (ja) * | 2010-10-01 | 2014-01-16 | サムスン エレクトロニクス カンパニー リミテッド | バリアを用いる３ｄディスプレイ装置およびその駆動方法 |
| US9716877B2 (en) | 2010-10-01 | 2017-07-25 | Samsung Electronics Co., Ltd. | 3D display device using barrier and driving method thereof |
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