JP2001068398A5 - - Google Patents

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Publication number
JP2001068398A5
JP2001068398A5 JP1999242136A JP24213699A JP2001068398A5 JP 2001068398 A5 JP2001068398 A5 JP 2001068398A5 JP 1999242136 A JP1999242136 A JP 1999242136A JP 24213699 A JP24213699 A JP 24213699A JP 2001068398 A5 JP2001068398 A5 JP 2001068398A5
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JP
Japan
Prior art keywords
manufacturing
mask
integrated circuit
circuit device
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1999242136A
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English (en)
Japanese (ja)
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JP2001068398A (ja
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Publication date
Application filed filed Critical
Priority to JP24213699A priority Critical patent/JP2001068398A/ja
Priority claimed from JP24213699A external-priority patent/JP2001068398A/ja
Priority to US09/640,721 priority patent/US6548312B1/en
Publication of JP2001068398A publication Critical patent/JP2001068398A/ja
Publication of JP2001068398A5 publication Critical patent/JP2001068398A5/ja
Pending legal-status Critical Current

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JP24213699A 1999-08-27 1999-08-27 半導体集積回路装置の製造方法およびマスクの製造方法 Pending JP2001068398A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP24213699A JP2001068398A (ja) 1999-08-27 1999-08-27 半導体集積回路装置の製造方法およびマスクの製造方法
US09/640,721 US6548312B1 (en) 1999-08-27 2000-08-18 Manufacturing method of semiconductor integrated circuit devices and mask manufacturing methods

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24213699A JP2001068398A (ja) 1999-08-27 1999-08-27 半導体集積回路装置の製造方法およびマスクの製造方法

Publications (2)

Publication Number Publication Date
JP2001068398A JP2001068398A (ja) 2001-03-16
JP2001068398A5 true JP2001068398A5 (enExample) 2004-10-28

Family

ID=17084857

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24213699A Pending JP2001068398A (ja) 1999-08-27 1999-08-27 半導体集積回路装置の製造方法およびマスクの製造方法

Country Status (2)

Country Link
US (1) US6548312B1 (enExample)
JP (1) JP2001068398A (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4174660B2 (ja) * 2000-12-28 2008-11-05 株式会社ニコン 露光方法及び装置、プログラム及び情報記録媒体、並びにデバイス製造方法
TWI220998B (en) * 2001-02-13 2004-09-11 Nikon Corp Exposure method, exposure apparatus and manufacture method of the same
US20060285100A1 (en) * 2001-02-13 2006-12-21 Nikon Corporation Exposure apparatus and exposure method, and device manufacturing method
JP2002357889A (ja) * 2001-03-28 2002-12-13 Sony Corp 位相シフトマスクの作製装置及び作製方法並びに位相シフトマスクを使用するパターン形成方法
JP2003151875A (ja) * 2001-11-09 2003-05-23 Mitsubishi Electric Corp パターンの形成方法および装置の製造方法
KR100468725B1 (ko) * 2002-04-15 2005-01-29 삼성전자주식회사 렌즈 수차 측정용 포토마스크 및 그 제조 방법과 렌즈수차 측정 방법
US20050106476A1 (en) * 2002-04-16 2005-05-19 Jens Hassmann Method for producing a mask adapted to an exposure apparatus
KR100673487B1 (ko) * 2002-04-17 2007-01-24 캐논 가부시끼가이샤 레티클 및 광학특성 계측방법
US6955930B2 (en) * 2002-05-30 2005-10-18 Credence Systems Corporation Method for determining thickness of a semiconductor substrate at the floor of a trench
KR100434110B1 (ko) * 2002-06-04 2004-06-04 삼성전자주식회사 반도체 장치의 제조방법
JP4327412B2 (ja) * 2002-06-06 2009-09-09 株式会社日立製作所 波面収差測定装置及び露光装置
KR20050121728A (ko) * 2003-04-16 2005-12-27 가부시키가이샤 니콘 패턴 결정 방법 및 시스템, 마스크의 제조 방법, 결상 성능조정 방법, 노광 방법 및 장치, 그리고 프로그램 및 정보기록 매체
JP3993545B2 (ja) * 2003-09-04 2007-10-17 株式会社東芝 パターンの作製方法、半導体装置の製造方法、パターンの作製システム、セルライブラリ、フォトマスクの製造方法
WO2005076077A2 (en) * 2004-02-05 2005-08-18 Koninklijke Philips Electronics N. V. Mask inspection apparatus and method
US7421125B1 (en) * 2004-03-10 2008-09-02 Altor Systems Inc. Image analysis, editing and search techniques
US7405833B2 (en) * 2004-11-05 2008-07-29 Zygo Corporation Method for calibration and removal of wavefront errors
KR100675882B1 (ko) * 2004-12-22 2007-02-02 주식회사 하이닉스반도체 다중투과 위상 마스크 및 이를 이용한 노광 방법
JP2006276279A (ja) * 2005-03-28 2006-10-12 Fujitsu Ltd パターンデータ作成方法、パターンデータ作成プログラム、コンピュータ可読記録媒体、コンピュータおよび半導体装置の製造方法
JP2007079517A (ja) * 2005-09-16 2007-03-29 Toshiba Corp パターン作成方法、パターン作成プログラム及び半導体装置の製造方法
KR101204667B1 (ko) 2010-09-13 2012-11-26 에스케이하이닉스 주식회사 위상반전마스크의 시디 보정방법 및 그 제조방법
JP5221611B2 (ja) 2010-09-13 2013-06-26 株式会社東芝 ドーズデータ生成装置、露光システム、ドーズデータ生成方法および半導体装置の製造方法
NL2008957A (en) * 2011-07-08 2013-01-09 Asml Netherlands Bv Methods and systems for pattern design with tailored response to wavefront aberration.
KR101888940B1 (ko) * 2012-03-28 2018-08-17 삼성전자주식회사 패턴 레이아웃을 디자인하는 방법
US9158878B2 (en) * 2013-08-23 2015-10-13 Kabushiki Kaisha Toshiba Method and apparatus for generating circuit layout using design model and specification
KR102345078B1 (ko) * 2017-03-31 2021-12-29 가부시키가이샤 니콘 패턴 산출 장치, 패턴 산출 방법, 마스크, 노광 장치, 디바이스 제조 방법, 컴퓨터 프로그램, 및, 기록 매체
JP2020197667A (ja) * 2019-06-04 2020-12-10 キオクシア株式会社 パターン生成装置、パターン生成方法及び半導体装置の製造方法
JPWO2023135773A1 (enExample) * 2022-01-14 2023-07-20

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03215861A (ja) 1990-01-19 1991-09-20 Fujitsu Ltd パターンの形成方法
JP3200894B2 (ja) * 1991-03-05 2001-08-20 株式会社日立製作所 露光方法及びその装置
EP0529971B1 (en) * 1991-08-22 2003-07-23 Nikon Corporation High resolution printing technique by using a mask pattern adapted to the technique
JP3215861B2 (ja) 1991-09-24 2001-10-09 俊彦 芳野 磁気光学素子およびそれを用いた電流測定装置
US5691115A (en) * 1992-06-10 1997-11-25 Hitachi, Ltd. Exposure method, aligner, and method of manufacturing semiconductor integrated circuit devices
KR0163471B1 (ko) * 1994-07-05 1998-12-15 가네꼬 히사시 수정된 조명에 이용되는 포토-마스크 제조 방법, 포토-마스크를 이용하는 투영 정렬기 및 포토-마스크로부터 감광층으로 패턴상을 전사하는 방법
US5717449A (en) 1995-07-06 1998-02-10 Hewlett-Packard Company Toner projection printer with improved address electrode structure
JP3331822B2 (ja) * 1995-07-17 2002-10-07 ソニー株式会社 マスクパターン補正方法とそれを用いたマスク、露光方法および半導体装置
US6225637B1 (en) * 1996-10-25 2001-05-01 Canon Kabushiki Kaisha Electron beam exposure apparatus
JP3574729B2 (ja) 1997-02-14 2004-10-06 株式会社ルネサステクノロジ レンズ収差測定方法
JPH10321685A (ja) 1997-05-21 1998-12-04 Toshiba Electron Eng Corp 半導体素子の試験方法および試験装置

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