JP2001067899A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2001067899A5 JP2001067899A5 JP1999246173A JP24617399A JP2001067899A5 JP 2001067899 A5 JP2001067899 A5 JP 2001067899A5 JP 1999246173 A JP1999246173 A JP 1999246173A JP 24617399 A JP24617399 A JP 24617399A JP 2001067899 A5 JP2001067899 A5 JP 2001067899A5
- Authority
- JP
- Japan
- Prior art keywords
- memory device
- semiconductor memory
- signal line
- amplifiers
- data
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 11
- 230000000295 complement effect Effects 0.000 claims description 2
- 239000011159 matrix material Substances 0.000 claims 1
- 238000013144 data compression Methods 0.000 description 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24617399A JP2001067899A (ja) | 1999-08-31 | 1999-08-31 | 半導体記憶装置 |
| TW089116645A TW501272B (en) | 1999-08-31 | 2000-08-17 | Semiconductor memory device |
| KR10-2000-0050314A KR100370901B1 (ko) | 1999-08-31 | 2000-08-29 | 반도체 기억 장치 |
| US09/650,745 US6301144B1 (en) | 1999-08-31 | 2000-08-30 | Semiconductor memory device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24617399A JP2001067899A (ja) | 1999-08-31 | 1999-08-31 | 半導体記憶装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001067899A JP2001067899A (ja) | 2001-03-16 |
| JP2001067899A5 true JP2001067899A5 (https=) | 2005-08-25 |
Family
ID=17144611
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24617399A Pending JP2001067899A (ja) | 1999-08-31 | 1999-08-31 | 半導体記憶装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6301144B1 (https=) |
| JP (1) | JP2001067899A (https=) |
| KR (1) | KR100370901B1 (https=) |
| TW (1) | TW501272B (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6295618B1 (en) * | 1998-08-25 | 2001-09-25 | Micron Technology, Inc. | Method and apparatus for data compression in memory devices |
| KR100451462B1 (ko) * | 2002-09-03 | 2004-10-08 | 주식회사 하이닉스반도체 | 컴프레스 테스트 장치 |
| GB2626959A (en) * | 2023-02-08 | 2024-08-14 | Pragmatic Semiconductor Ltd | Memory circuitry |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7416755A (nl) * | 1974-12-23 | 1976-06-25 | Philips Nv | Werkwijze en inrichting voor het testen van een digitaal geheugen. |
| KR900005666B1 (ko) | 1984-08-30 | 1990-08-03 | 미쓰비시전기 주식회사 | 반도체기억장치 |
| JPH07262797A (ja) | 1994-02-02 | 1995-10-13 | Hitachi Ltd | 半導体集積回路装置 |
-
1999
- 1999-08-31 JP JP24617399A patent/JP2001067899A/ja active Pending
-
2000
- 2000-08-17 TW TW089116645A patent/TW501272B/zh not_active IP Right Cessation
- 2000-08-29 KR KR10-2000-0050314A patent/KR100370901B1/ko not_active Expired - Fee Related
- 2000-08-30 US US09/650,745 patent/US6301144B1/en not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI289858B (en) | A net datapath architecture for high area efficiency | |
| US7609573B2 (en) | Embedded memory databus architecture | |
| JPH0572039B2 (https=) | ||
| US5422839A (en) | Semiconductor memory device | |
| KR970017611A (ko) | 다수의 메모리 어레이내에 분포된 다수의 뱅크들을 갖는 동기성 반도체 메모리 장치 | |
| KR900000904A (ko) | 반도체기억장치와 이것을 이용한 데이터패스(data path) | |
| KR920001545A (ko) | 반도체 기억장치 | |
| US5650977A (en) | Integrated circuit memory device including banks of memory cells and related methods | |
| WO2002019340A1 (fr) | Memoire semi-conducteur et procede de rafraichissement associe | |
| US5844915A (en) | Method for testing word line leakage in a semiconductor memory device | |
| JP3781819B2 (ja) | 三重ポートを有する半導体メモリ装置 | |
| JP2001067899A5 (https=) | ||
| JP2002198499A5 (https=) | ||
| KR980006294A (ko) | 반도체 기억장치 | |
| JP2716251B2 (ja) | 半導体メモリ | |
| US20030206479A1 (en) | High area efficient data line architecture | |
| KR860002156A (ko) | 반도체 장치 | |
| KR100262003B1 (ko) | 반도체 메모리 | |
| KR19990077536A (ko) | 동적임의접근메모리지연회로및그제조방법 | |
| JPS63244392A (ja) | 半導体記憶装置 | |
| JPS63225993A (ja) | 半導体記憶装置 | |
| JPS63206991A (ja) | ダイナミツク型ram | |
| JP3533192B2 (ja) | 消費電力低減回路及びそれに用いる消費電力低減方法 | |
| JP3741225B2 (ja) | 半導体記憶装置 | |
| JP2767841B2 (ja) | 半導体メモリ装置 |