JP2001015849A5 - - Google Patents

Download PDF

Info

Publication number
JP2001015849A5
JP2001015849A5 JP1999186552A JP18655299A JP2001015849A5 JP 2001015849 A5 JP2001015849 A5 JP 2001015849A5 JP 1999186552 A JP1999186552 A JP 1999186552A JP 18655299 A JP18655299 A JP 18655299A JP 2001015849 A5 JP2001015849 A5 JP 2001015849A5
Authority
JP
Japan
Prior art keywords
semiconductor
photodiode
conductivity type
layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1999186552A
Other languages
English (en)
Japanese (ja)
Other versions
JP3934828B2 (ja
JP2001015849A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP18655299A priority Critical patent/JP3934828B2/ja
Priority claimed from JP18655299A external-priority patent/JP3934828B2/ja
Priority to US09/606,014 priority patent/US6449296B1/en
Publication of JP2001015849A publication Critical patent/JP2001015849A/ja
Publication of JP2001015849A5 publication Critical patent/JP2001015849A5/ja
Application granted granted Critical
Publication of JP3934828B2 publication Critical patent/JP3934828B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP18655299A 1999-06-30 1999-06-30 半導体レーザ装置 Expired - Fee Related JP3934828B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP18655299A JP3934828B2 (ja) 1999-06-30 1999-06-30 半導体レーザ装置
US09/606,014 US6449296B1 (en) 1999-06-30 2000-06-29 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18655299A JP3934828B2 (ja) 1999-06-30 1999-06-30 半導体レーザ装置

Publications (3)

Publication Number Publication Date
JP2001015849A JP2001015849A (ja) 2001-01-19
JP2001015849A5 true JP2001015849A5 (https=) 2005-03-03
JP3934828B2 JP3934828B2 (ja) 2007-06-20

Family

ID=16190523

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18655299A Expired - Fee Related JP3934828B2 (ja) 1999-06-30 1999-06-30 半導体レーザ装置

Country Status (2)

Country Link
US (1) US6449296B1 (https=)
JP (1) JP3934828B2 (https=)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2812769B1 (fr) * 2000-08-04 2003-08-29 Cit Alcatel Laser accordable en semi-conducteur a emission par la tranche
KR100456984B1 (ko) 2001-03-06 2004-11-10 가부시끼가이샤 도시바 반도체 레이저 장치
KR100412354B1 (ko) * 2001-05-30 2003-12-31 삼성전자주식회사 이온주입장치
US6907054B2 (en) * 2001-06-29 2005-06-14 Sharp Kabushiki Kaisha Semiconductor laser device
US6687272B2 (en) 2001-09-18 2004-02-03 Kabushiki Kaisha Toshiba Semiconductor laser device
JP2003198032A (ja) * 2001-12-27 2003-07-11 Mitsubishi Electric Corp 光素子、光素子モジュール及び光素子用キャリア
JP2003233923A (ja) * 2002-02-08 2003-08-22 Sony Corp 光学ピックアップ及びディスクドライブ装置
US6973110B2 (en) * 2002-02-22 2005-12-06 Infineon Technologies Ag Monolithic laser configuration
US7180929B2 (en) * 2002-04-18 2007-02-20 Intel Corporation Wafer-level test structure for edge-emitting semiconductor lasers
DE10253907A1 (de) * 2002-09-20 2004-04-01 Osram Opto Semiconductors Gmbh Optischer Abtastkopf und Verfahren zur Herstellung desselben
JP4064218B2 (ja) * 2002-11-28 2008-03-19 三菱電機株式会社 半導体レーザ装置
DE10323857A1 (de) 2003-05-26 2005-01-27 Osram Opto Semiconductors Gmbh Gehäuse für ein Laserdiodenbauelement, Laserdiodenbauelement und Verfahren zum Herstellen eines Laserdiodenbauelements
WO2005048421A1 (ja) * 2003-11-14 2005-05-26 Sanyo Electric Co., Ltd 半導体レーザ装置
DE602004003459T2 (de) 2003-12-16 2007-03-15 Matsushita Electric Industrial Co., Ltd., Kadoma Optischer Halbleiter und Verfahren zu seiner Herstellung
US20050196112A1 (en) * 2004-03-08 2005-09-08 Toshio Takagi Transmitting optical subassembly capable of monitoring the front beam of the semiconductor laser diode
JP2006040933A (ja) * 2004-07-22 2006-02-09 Sharp Corp 半導体レーザ装置
US8154030B2 (en) * 2004-10-01 2012-04-10 Finisar Corporation Integrated diode in a silicon chip scale package
JP2007266314A (ja) * 2006-03-28 2007-10-11 Matsushita Electric Works Ltd 発光装置
JP5822688B2 (ja) * 2011-11-29 2015-11-24 京セラ株式会社 受発光素子
CN107565374B (zh) 2012-05-08 2020-08-07 镁可微波技术有限公司 具有光束形状修改的激光器
DE102019115597A1 (de) * 2019-06-07 2020-12-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaservorrichtung und optoelektronisches Strahlumlenkelement für eine Halbleiterlaservorrichtung
US20220166185A1 (en) * 2019-08-06 2022-05-26 Mitsubishi Electric Corporation Semiconductor laser device
EP4040613A4 (en) * 2019-09-30 2023-11-01 Kyocera Corporation Optical element mounting package, electronic device, and electronic module
JPWO2021125017A1 (https=) * 2019-12-20 2021-06-24

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2892812B2 (ja) 1990-10-19 1999-05-17 松下電子工業株式会社 半導体レーザ装置
JP3032376B2 (ja) 1992-05-11 2000-04-17 松下電子工業株式会社 半導体レーザ装置
US5883913A (en) * 1993-12-27 1999-03-16 Sony Corporation Optical device
JPH0818152A (ja) * 1994-06-30 1996-01-19 Sony Corp 光半導体装置及びその製造方法

Similar Documents

Publication Publication Date Title
JP2001015849A5 (https=)
CN101375418B (zh) 半导体发光装置
US6791151B2 (en) Base of optoelectronic device
US8081671B2 (en) Optoelectronic device and method of operating optoelectronic device
TWI238644B (en) Image reading device
US6686218B2 (en) Method for packaging a high efficiency electro-optics device
JPH0555703A (ja) 面発光レーザ装置
EP0840380A3 (en) Light emitting apparatus
CN101675540A (zh) 半导体发光装置
JP2002506576A (ja) インコヒーレントビーム放射光電構成素子
WO2003088367A8 (en) Integrated active photonic device and photodetector
JP2017163023A (ja) 光検出器およびこれを用いた被写体検知システム
Linder et al. High-brightness AlGaInP light-emitting diodes using surface texturing
JPS57160189A (en) Semiconductor luminous device incorporated with photodetector
JPH08162669A (ja) スーパールミネッセントダイオード
Lee Analysis of InGaN high-brightness light-emitting diodes
JPS5931872B2 (ja) 光半導体装置
KR101478336B1 (ko) 전반사를 이용하는 ｌｅｄ 패키지
Tsutsui et al. Analysis of photon recycling in light emitting diodes with nonuniform injection
Hinckley et al. Modelling of device structure effects on electrical crosstalk in back illuminated CMOS compatible photodiodes
JPH11163390A (ja) 光モジュール
JP3272060B2 (ja) 半導体素子
JP3235092U (ja) 反射型光センサ
US11867375B2 (en) Radiation-emitting semiconductor chip, rear light for a motor vehicle, motor vehicle, and optical distance measurement device
KR100830605B1 (ko) 광 검출기를 구비한 광소자