JPWO2021125017A1 - - Google Patents

Info

Publication number
JPWO2021125017A1
JPWO2021125017A1 JP2021565518A JP2021565518A JPWO2021125017A1 JP WO2021125017 A1 JPWO2021125017 A1 JP WO2021125017A1 JP 2021565518 A JP2021565518 A JP 2021565518A JP 2021565518 A JP2021565518 A JP 2021565518A JP WO2021125017 A1 JPWO2021125017 A1 JP WO2021125017A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2021565518A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021125017A1 publication Critical patent/JPWO2021125017A1/ja
Priority to JP2025020997A priority Critical patent/JP7799230B2/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02255—Out-coupling of light using beam deflecting elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02315—Support members, e.g. bases or carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4075—Beam steering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/10—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices
    • H10F55/16—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices wherein the radiation-sensitive semiconductor devices have no potential barriers
    • H10F55/165—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices wherein the radiation-sensitive semiconductor devices have no potential barriers wherein the electric light source comprises semiconductor devices having potential barriers, e.g. light emitting diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
    • H01S5/4093—Red, green and blue [RGB] generated directly by laser action or by a combination of laser action with nonlinear frequency conversion
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Device Packages (AREA)
  • Semiconductor Lasers (AREA)
  • Light Receiving Elements (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
JP2021565518A 2019-12-20 2020-12-09 Pending JPWO2021125017A1 (https=)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025020997A JP7799230B2 (ja) 2019-12-20 2025-02-12 受光素子、発光装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019230258 2019-12-20
PCT/JP2020/045876 WO2021125017A1 (ja) 2019-12-20 2020-12-09 受光素子、発光装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2025020997A Division JP7799230B2 (ja) 2019-12-20 2025-02-12 受光素子、発光装置

Publications (1)

Publication Number Publication Date
JPWO2021125017A1 true JPWO2021125017A1 (https=) 2021-06-24

Family

ID=76476553

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2021565518A Pending JPWO2021125017A1 (https=) 2019-12-20 2020-12-09
JP2025020997A Active JP7799230B2 (ja) 2019-12-20 2025-02-12 受光素子、発光装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2025020997A Active JP7799230B2 (ja) 2019-12-20 2025-02-12 受光素子、発光装置

Country Status (5)

Country Link
US (1) US12451664B2 (https=)
EP (1) EP4080585A4 (https=)
JP (2) JPWO2021125017A1 (https=)
CN (1) CN114930548B (https=)
WO (1) WO2021125017A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7791416B2 (ja) * 2021-11-25 2025-12-24 日亜化学工業株式会社 発光装置
JP2023085909A (ja) * 2021-12-09 2023-06-21 ローム株式会社 光センサ

Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62112389A (ja) * 1985-11-12 1987-05-23 Hitachi Ltd 半導体レ−ザモジユ−ル
JPH0490657A (ja) * 1990-08-03 1992-03-24 Canon Inc 光電変換装置
JPH0555709A (ja) * 1991-08-29 1993-03-05 Nec Corp 冷却形半導体レーザアレイモジユール
JPH09331050A (ja) * 1996-06-07 1997-12-22 Nec Corp 半導体装置及びその製造方法
JPH10173207A (ja) * 1996-10-11 1998-06-26 Sharp Corp 光送受信モジュール
JPH11150289A (ja) * 1997-11-18 1999-06-02 Yokogawa Electric Corp フォトダイオードアレイ
JP2001291877A (ja) * 2000-04-05 2001-10-19 Hamamatsu Photonics Kk 固体撮像装置
JP2001352094A (ja) * 2000-04-06 2001-12-21 Hamamatsu Photonics Kk ホトダイオードアレイ
JP2003035777A (ja) * 2001-07-19 2003-02-07 Hitachi Medical Corp Ｘ線検出器及びこれを用いたｘ線ｃｔ装置
JP2004134522A (ja) * 2002-10-09 2004-04-30 Sumitomo Electric Ind Ltd 光モジュール
JP2004273747A (ja) * 2003-03-07 2004-09-30 Nippon Kessho Kogaku Kk 光検出器および放射線検出装置
JP2008072589A (ja) * 2006-09-15 2008-03-27 Matsushita Electric Ind Co Ltd カラーイメージセンサ
JP2010258165A (ja) * 2009-04-23 2010-11-11 Omron Corp 光結合装置
JP2012503314A (ja) * 2008-09-15 2012-02-02 オーエスアイ．オプトエレクトロニクス．インコーポレイテッド 浅いｎ＋層を有する薄い能動層フィッシュボーン・フォトダイオードとその製造方法
JP2012209286A (ja) * 2011-03-29 2012-10-25 Hitachi Ltd 光モジュール
US20150333095A1 (en) * 2014-05-13 2015-11-19 Stmicroelectronics S.R.L. Solid state photomultipliers array of enhanced fill factor and simplified packaging

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4293826A (en) 1979-04-30 1981-10-06 Xerox Corporation Hybrid semiconductor laser/detectors
US4297653A (en) 1979-04-30 1981-10-27 Xerox Corporation Hybrid semiconductor laser/detectors
JPH0610699Y2 (ja) 1986-07-03 1994-03-16 三洋電機株式会社 受光装置
JPH04206046A (ja) 1990-11-30 1992-07-28 Matsushita Electric Ind Co Ltd 光学ヘッド
JPH06342900A (ja) 1993-05-31 1994-12-13 Nippon Steel Corp 一次元カラーイメージセンサ
JPH1174618A (ja) * 1997-08-28 1999-03-16 Canon Inc 半導体レーザ装置および光量制御装置、画像形成装置
JP4165785B2 (ja) * 1999-05-11 2008-10-15 横河電機株式会社 フォトダイオードアレイ
JP3934828B2 (ja) * 1999-06-30 2007-06-20 株式会社東芝 半導体レーザ装置
JP2002118281A (ja) 2000-10-10 2002-04-19 Hitachi Ltd 多波長用光ピックアップ装置
JP2002252415A (ja) 2000-12-21 2002-09-06 Kyocera Corp 光モジュール
KR100456984B1 (ko) 2001-03-06 2004-11-10 가부시끼가이샤 도시바 반도체 레이저 장치
JP2002270938A (ja) 2001-03-06 2002-09-20 Toshiba Corp 半導体レーザ装置
JP2003222765A (ja) 2002-01-29 2003-08-08 Kyocera Corp 光モジュール
JP2003249687A (ja) 2002-02-26 2003-09-05 Kyocera Corp 半導体装置及びそれを用いた光モジュール
JP2005251890A (ja) 2004-03-03 2005-09-15 Sumitomo Electric Ind Ltd 上面入射型受光素子アレイ
JP4391497B2 (ja) 2006-05-19 2009-12-24 シャープ株式会社 カラーセンサー、カラーセンサーの製造方法、センサー、及び電子機器
US20120037787A1 (en) 2006-09-07 2012-02-16 Matsushita Electric Industrial Co., Ltd. Image sensor
JP5726434B2 (ja) 2010-04-14 2015-06-03 浜松ホトニクス株式会社 半導体光検出素子
JP2012094765A (ja) * 2010-10-28 2012-05-17 Sanyo Electric Co Ltd 半導体レーザ装置および光装置
JP2012195473A (ja) * 2011-03-17 2012-10-11 Ricoh Co Ltd 光検出用モニタ装置と面発光レーザパッケージおよびそれを用いた光走査装置と画像形成装置

Patent Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62112389A (ja) * 1985-11-12 1987-05-23 Hitachi Ltd 半導体レ−ザモジユ−ル
JPH0490657A (ja) * 1990-08-03 1992-03-24 Canon Inc 光電変換装置
JPH0555709A (ja) * 1991-08-29 1993-03-05 Nec Corp 冷却形半導体レーザアレイモジユール
JPH09331050A (ja) * 1996-06-07 1997-12-22 Nec Corp 半導体装置及びその製造方法
JPH10173207A (ja) * 1996-10-11 1998-06-26 Sharp Corp 光送受信モジュール
JPH11150289A (ja) * 1997-11-18 1999-06-02 Yokogawa Electric Corp フォトダイオードアレイ
JP2001291877A (ja) * 2000-04-05 2001-10-19 Hamamatsu Photonics Kk 固体撮像装置
JP2001352094A (ja) * 2000-04-06 2001-12-21 Hamamatsu Photonics Kk ホトダイオードアレイ
JP2003035777A (ja) * 2001-07-19 2003-02-07 Hitachi Medical Corp Ｘ線検出器及びこれを用いたｘ線ｃｔ装置
JP2004134522A (ja) * 2002-10-09 2004-04-30 Sumitomo Electric Ind Ltd 光モジュール
JP2004273747A (ja) * 2003-03-07 2004-09-30 Nippon Kessho Kogaku Kk 光検出器および放射線検出装置
JP2008072589A (ja) * 2006-09-15 2008-03-27 Matsushita Electric Ind Co Ltd カラーイメージセンサ
JP2012503314A (ja) * 2008-09-15 2012-02-02 オーエスアイ．オプトエレクトロニクス．インコーポレイテッド 浅いｎ＋層を有する薄い能動層フィッシュボーン・フォトダイオードとその製造方法
JP2010258165A (ja) * 2009-04-23 2010-11-11 Omron Corp 光結合装置
JP2012209286A (ja) * 2011-03-29 2012-10-25 Hitachi Ltd 光モジュール
US20150333095A1 (en) * 2014-05-13 2015-11-19 Stmicroelectronics S.R.L. Solid state photomultipliers array of enhanced fill factor and simplified packaging

Also Published As

Publication number Publication date
EP4080585A1 (en) 2022-10-26
CN114930548A (zh) 2022-08-19
CN114930548B (zh) 2025-07-15
US20230012665A1 (en) 2023-01-19
US12451664B2 (en) 2025-10-21
JP2025065479A (ja) 2025-04-17
EP4080585A4 (en) 2024-01-17
JP7799230B2 (ja) 2026-01-15
WO2021125017A1 (ja) 2021-06-24

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