JP2000502407A - 非導電性支持体材料の上に配置されたパターン導線構造体、特に微細なパターン導線構造体およびそれの製造方法 - Google Patents
非導電性支持体材料の上に配置されたパターン導線構造体、特に微細なパターン導線構造体およびそれの製造方法Info
- Publication number
- JP2000502407A JP2000502407A JP11501496A JP50149699A JP2000502407A JP 2000502407 A JP2000502407 A JP 2000502407A JP 11501496 A JP11501496 A JP 11501496A JP 50149699 A JP50149699 A JP 50149699A JP 2000502407 A JP2000502407 A JP 2000502407A
- Authority
- JP
- Japan
- Prior art keywords
- heavy metal
- support material
- metal complex
- complex
- conductor structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 title claims abstract description 27
- 229910001385 heavy metal Inorganic materials 0.000 claims abstract description 45
- 239000004020 conductor Substances 0.000 claims abstract description 36
- 150000004696 coordination complex Chemical class 0.000 claims abstract description 12
- 238000000354 decomposition reaction Methods 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 27
- 238000001465 metallisation Methods 0.000 claims description 14
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 12
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 12
- -1 metal complex salt Chemical class 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 8
- 230000005855 radiation Effects 0.000 claims description 7
- 150000003839 salts Chemical class 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000008139 complexing agent Substances 0.000 claims description 5
- 239000003795 chemical substances by application Substances 0.000 claims description 4
- 239000011230 binding agent Substances 0.000 claims description 3
- 239000002738 chelating agent Substances 0.000 claims description 3
- LXNAVEXFUKBNMK-UHFFFAOYSA-N palladium(II) acetate Substances [Pd].CC(O)=O.CC(O)=O LXNAVEXFUKBNMK-UHFFFAOYSA-N 0.000 claims description 3
- YJVFFLUZDVXJQI-UHFFFAOYSA-L palladium(ii) acetate Chemical compound [Pd+2].CC([O-])=O.CC([O-])=O YJVFFLUZDVXJQI-UHFFFAOYSA-L 0.000 claims description 3
- 230000002829 reductive effect Effects 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 3
- 150000001491 aromatic compounds Chemical class 0.000 claims description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 2
- 239000003446 ligand Substances 0.000 claims description 2
- 229920001721 polyimide Polymers 0.000 claims description 2
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 claims 3
- 150000002940 palladium Chemical class 0.000 claims 1
- 230000001070 adhesive effect Effects 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 229910052763 palladium Inorganic materials 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000010985 leather Substances 0.000 description 1
- 230000010534 mechanism of action Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
- H05K3/182—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
- H05K3/185—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method by making a catalytic pattern by photo-imaging
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1603—Process or apparatus coating on selected surface areas
- C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
- C23C18/1608—Process or apparatus coating on selected surface areas by direct patterning from pretreatment step, i.e. selective pre-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1603—Process or apparatus coating on selected surface areas
- C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
- C23C18/1612—Process or apparatus coating on selected surface areas by direct patterning through irradiation means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
- C23C18/28—Sensitising or activating
- C23C18/30—Activating or accelerating or sensitising with palladium or other noble metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemically Coating (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Catalysts (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Non-Insulated Conductors (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.重金属含有ベースとそれの上に適用された金属化層とより成る、非導電性支 持体材料の上に配置されたパターン導線構造体、特に微細なパターン導線構造体 において、重金属含有ベースが非導電性の有機重金属錯塩の分解によって生じる 重金属核を含有しており、該重金属錯塩は支持体材料のミクロ孔多孔質表面上の 全面に適用されておりそしてパターン導線構造体を取り巻く領域にその表面を形 成していることを特徴とする、上記パターン導線構造体。 2.重金属錯塩がPd−含有重金属錯塩である請求項1に記載のパターン導線構 造体。 3.重金属錯塩がPd−錯塩である請求項1に記載のパターン導線構造体。 4.重金属含有成分を非導電性支持材料への被覆物として適用し、パターン導線 構造体の領域にエキシマレーザーUV線を選択的に適用し、その際に重金属核を 遊離しそしてこの領域を化学的に還元して金属化する、請求項1のパターン導線 構造体を製造する方法において、重金属含有成分として非導電性有機性重金属錯 塩を使用し、エキシマレーザーUV線による該重金属錯塩の分解によって重金属 核を遊離しそして支持体材料がミクロ孔多孔質表面を有していることを特徴とす る、上記方法。 5.Pd−含有重金属錯塩を使用する請求項4に記載の方法。 6.Pd−錯塩を使用する請求項4に記載の方法。 7.パラジウム塩を有機性錯塩形成剤と反応させることによってPd−錯塩を生 成する請求項6に記載の方法。 8.二酢酸パラジウムを有機性錯塩形成剤と反応させそして結晶化させることに よってPd−錯塩を生成する請求項6または7に記載の方法。 9.有機性錯塩形成剤としてN、O、S、Pの様なリガンド原子を複数持つ高安 定性の多価キレート形成剤を単独でまたはイオン化基、例えばヒドロキシル基ま たはカルボキシル基と一緒に使用する請求項8に記載の方法。 10.有機性錯塩形成剤として立体障害芳香族化合物および金属錯塩形成基との 分子内組合せ物を使用する請求項8または9に記載の方法。 11.式 で表される有機性錯塩形成剤を使用する請求項8、9または10に記載の方法。 12.溶剤に溶解した重金属錯塩を、多孔質支持体材料または多孔質表面を有す る支持体材料に適用する請求項4〜11のいずれか一つに記載の方法。 13.重金属錯塩をポリイミド膜フィルムに塗布する請求項12に記載の方法。 14.Pd−錯塩のための溶剤としてジメチルホルムアミドまたは酢酸エチルを 使用する請求項6または12または13に記載の方法。 15.重金属錯塩を多孔質構造を形成する結合剤中に混入し、次いで支持体材料 に被覆物として適用する請求項4〜11のいずれか一つに記載の方法。 16.重金属核を248nmの波長を有するKrF−エキシマレーザーによって 分解する請求項4〜15のいずれか一つに記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19723734.7 | 1997-06-06 | ||
DE19723734A DE19723734C2 (de) | 1997-06-06 | 1997-06-06 | Leiterbahnstrukturen auf einem nichtleitenden Trägermaterial und Verfahren zu ihrer Herstellung |
PCT/EP1998/003303 WO1998055669A2 (de) | 1997-06-06 | 1998-06-03 | Leiterbahnstrukturen auf einem nichtleitenden trägermaterial, insbesondere feine leiterbahnstrukturen, und verfahren zu ihrer herstellung |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2000502407A true JP2000502407A (ja) | 2000-02-29 |
JP3407890B2 JP3407890B2 (ja) | 2003-05-19 |
Family
ID=7831576
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50149699A Expired - Fee Related JP3407890B2 (ja) | 1997-06-06 | 1998-06-03 | 非導電性支持体材料の上に配置されたパターン導線構造体、特に微細なパターン導線構造体およびそれの製造方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US6319564B1 (ja) |
EP (1) | EP0917597B1 (ja) |
JP (1) | JP3407890B2 (ja) |
KR (1) | KR100325790B1 (ja) |
CN (1) | CN1195888C (ja) |
AT (1) | ATE231195T1 (ja) |
DE (2) | DE19723734C2 (ja) |
WO (1) | WO1998055669A2 (ja) |
Cited By (6)
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KR100716486B1 (ko) * | 2001-07-05 | 2007-05-10 | 엘피케이에프 레이저 앤드 일렉트로닉스 악티엔게젤샤프트 | 도체 트랙 구조물 및 그 구조물의 제조 방법 |
JP2009516396A (ja) * | 2005-12-28 | 2009-04-16 | インテル・コーポレーション | レーザ支援メタライゼーションおよび基板パターニングを利用するプリント回路基板のための方法および装置 |
JP2014074161A (ja) * | 2012-09-14 | 2014-04-24 | Mitsubishi Engineering Plastics Corp | レーザーダイレクトストラクチャリング用樹脂組成物、樹脂成形品、およびメッキ層付樹脂成形品の製造方法 |
JP2014074160A (ja) * | 2012-09-14 | 2014-04-24 | Mitsubishi Engineering Plastics Corp | レーザーダイレクトストラクチャリング用樹脂組成物、樹脂成形品、およびメッキ層付樹脂成形品の製造方法 |
KR20150035410A (ko) * | 2013-09-27 | 2015-04-06 | 주식회사 엘지화학 | 도전성 패턴 형성용 조성물, 이를 사용한 도전성 패턴 형성 방법과, 도전성 패턴을 갖는 수지 구조체 |
JP7182848B2 (ja) | 2015-11-19 | 2022-12-05 | 現代自動車株式会社 | タッチ入力装置、これを含む車両、およびその製造方法 |
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DE10016132A1 (de) * | 2000-03-31 | 2001-10-18 | Infineon Technologies Ag | Elektronisches Bauelement mit flexiblen Kontaktierungsstellen und Verfahren zu dessen Herstellung |
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US20070092638A1 (en) * | 2003-06-05 | 2007-04-26 | Mario Schoedner | Method for the structured metal-coating of polymeric and ceramic support materials, and compound that can be activated and is used in said method |
DE10344513A1 (de) * | 2003-09-24 | 2005-04-28 | Mitsubishi Polyester Film Gmbh | Mehrschichtige, orientierte, mittels elektromagnetischer Strahlung strukturierbare Folie aus thermoplastischem Polyester zur Herstellung selektiv metallisierter Folien |
DE10344512A1 (de) | 2003-09-24 | 2005-04-28 | Mitsubishi Polyester Film Gmbh | Einschichtige, orientierte, mittels elektromagnetischer Strahlung strukturierbare Folie aus thermoplastischem Polyester zur Herstellung selektiv metallisierter Folien |
DE102004003891A1 (de) * | 2004-01-27 | 2005-08-11 | Mitsubishi Polyester Film Gmbh | Orientierte, mittels elektromagnetischer Strahlung strukturierbare Folie aus thermoplastischem Polyester, Verfahren zu ihrer Herstellung und ihre Verwendung |
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US20050274933A1 (en) * | 2004-06-15 | 2005-12-15 | Peng Chen | Formulation for printing organometallic compounds to form conductive traces |
US20050276911A1 (en) * | 2004-06-15 | 2005-12-15 | Qiong Chen | Printing of organometallic compounds to form conductive traces |
US7291380B2 (en) | 2004-07-09 | 2007-11-06 | Hewlett-Packard Development Company, L.P. | Laser enhanced plating for forming wiring patterns |
US8323802B2 (en) * | 2004-10-20 | 2012-12-04 | E I Du Pont De Nemours And Company | Light activatable polyimide compositions for receiving selective metalization, and methods and compositions related thereto |
US20060083939A1 (en) * | 2004-10-20 | 2006-04-20 | Dunbar Meredith L | Light activatable polyimide compositions for receiving selective metalization, and methods and compositions related thereto |
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DE102004052301A1 (de) * | 2004-10-27 | 2006-05-11 | Jens Freye | Verfahren zur Herstellung von Leiterbahnstrukturen |
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- 1998-06-03 JP JP50149699A patent/JP3407890B2/ja not_active Expired - Fee Related
- 1998-06-03 US US09/242,107 patent/US6319564B1/en not_active Expired - Lifetime
- 1998-06-03 WO PCT/EP1998/003303 patent/WO1998055669A2/de active IP Right Grant
- 1998-06-03 KR KR1019997000934A patent/KR100325790B1/ko not_active IP Right Cessation
- 1998-06-03 CN CNB988007754A patent/CN1195888C/zh not_active Expired - Fee Related
- 1998-06-03 DE DE59806926T patent/DE59806926D1/de not_active Expired - Lifetime
- 1998-06-03 EP EP98937438A patent/EP0917597B1/de not_active Expired - Lifetime
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KR100716486B1 (ko) * | 2001-07-05 | 2007-05-10 | 엘피케이에프 레이저 앤드 일렉트로닉스 악티엔게젤샤프트 | 도체 트랙 구조물 및 그 구조물의 제조 방법 |
JP2009516396A (ja) * | 2005-12-28 | 2009-04-16 | インテル・コーポレーション | レーザ支援メタライゼーションおよび基板パターニングを利用するプリント回路基板のための方法および装置 |
JP2012089874A (ja) * | 2005-12-28 | 2012-05-10 | Intel Corp | プリント基板の製造方法 |
JP2014074161A (ja) * | 2012-09-14 | 2014-04-24 | Mitsubishi Engineering Plastics Corp | レーザーダイレクトストラクチャリング用樹脂組成物、樹脂成形品、およびメッキ層付樹脂成形品の製造方法 |
JP2014074160A (ja) * | 2012-09-14 | 2014-04-24 | Mitsubishi Engineering Plastics Corp | レーザーダイレクトストラクチャリング用樹脂組成物、樹脂成形品、およびメッキ層付樹脂成形品の製造方法 |
KR20150035410A (ko) * | 2013-09-27 | 2015-04-06 | 주식회사 엘지화학 | 도전성 패턴 형성용 조성물, 이를 사용한 도전성 패턴 형성 방법과, 도전성 패턴을 갖는 수지 구조체 |
KR101598084B1 (ko) | 2013-09-27 | 2016-02-26 | 주식회사 엘지화학 | 도전성 패턴 형성용 조성물, 이를 사용한 도전성 패턴 형성 방법과, 도전성 패턴을 갖는 수지 구조체 |
US9668342B2 (en) | 2013-09-27 | 2017-05-30 | Lg Chem, Ltd. | Composition and method for forming conductive pattern, and resin structure having conductive pattern thereon |
JP7182848B2 (ja) | 2015-11-19 | 2022-12-05 | 現代自動車株式会社 | タッチ入力装置、これを含む車両、およびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
EP0917597B1 (de) | 2003-01-15 |
CN1272892A (zh) | 2000-11-08 |
WO1998055669A2 (de) | 1998-12-10 |
CN1195888C (zh) | 2005-04-06 |
JP3407890B2 (ja) | 2003-05-19 |
WO1998055669A3 (de) | 1999-03-04 |
US6319564B1 (en) | 2001-11-20 |
KR100325790B1 (ko) | 2002-02-25 |
KR20000068049A (ko) | 2000-11-25 |
EP0917597A2 (de) | 1999-05-26 |
DE19723734A1 (de) | 1998-12-10 |
DE19723734C2 (de) | 2002-02-07 |
ATE231195T1 (de) | 2003-02-15 |
DE59806926D1 (de) | 2003-02-20 |
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