JP2000349300A5 - - Google Patents
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- Publication number
- JP2000349300A5 JP2000349300A5 JP2000090797A JP2000090797A JP2000349300A5 JP 2000349300 A5 JP2000349300 A5 JP 2000349300A5 JP 2000090797 A JP2000090797 A JP 2000090797A JP 2000090797 A JP2000090797 A JP 2000090797A JP 2000349300 A5 JP2000349300 A5 JP 2000349300A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- contact hole
- organic resin
- insulating film
- conductive film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010408 film Substances 0.000 claims 73
- 239000011347 resin Substances 0.000 claims 16
- 229920005989 resin Polymers 0.000 claims 16
- 239000004065 semiconductor Substances 0.000 claims 13
- 238000005530 etching Methods 0.000 claims 10
- 239000007789 gas Substances 0.000 claims 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 6
- 238000000034 method Methods 0.000 claims 6
- 238000004519 manufacturing process Methods 0.000 claims 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims 4
- 238000001312 dry etching Methods 0.000 claims 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 3
- 229910001882 dioxygen Inorganic materials 0.000 claims 3
- 229910052731 fluorine Inorganic materials 0.000 claims 3
- 239000011737 fluorine Substances 0.000 claims 3
- 229910052757 nitrogen Inorganic materials 0.000 claims 3
- 239000011159 matrix material Substances 0.000 claims 2
- 230000000149 penetrating effect Effects 0.000 claims 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 1
- 239000000460 chlorine Substances 0.000 claims 1
- 229910052801 chlorine Inorganic materials 0.000 claims 1
- 239000004973 liquid crystal related substance Substances 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000090797A JP4260334B2 (ja) | 1999-03-29 | 2000-03-29 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11-87017 | 1999-03-29 | ||
| JP8701799 | 1999-03-29 | ||
| JP2000090797A JP4260334B2 (ja) | 1999-03-29 | 2000-03-29 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000349300A JP2000349300A (ja) | 2000-12-15 |
| JP2000349300A5 true JP2000349300A5 (enrdf_load_stackoverflow) | 2005-09-08 |
| JP4260334B2 JP4260334B2 (ja) | 2009-04-30 |
Family
ID=26428335
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000090797A Expired - Fee Related JP4260334B2 (ja) | 1999-03-29 | 2000-03-29 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4260334B2 (enrdf_load_stackoverflow) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4674994B2 (ja) * | 2000-05-29 | 2011-04-20 | 株式会社半導体エネルギー研究所 | 電気光学装置の作製方法 |
| KR100803177B1 (ko) * | 2001-05-14 | 2008-02-14 | 삼성전자주식회사 | 액정표시장치용 박막 트랜지스터 및 그 제조방법 |
| JP2005085884A (ja) | 2003-09-05 | 2005-03-31 | Rohm Co Ltd | 半導体装置およびその製造方法 |
| JP5891846B2 (ja) * | 2012-02-24 | 2016-03-23 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
| JP5835696B2 (ja) * | 2012-09-05 | 2015-12-24 | 株式会社東芝 | 半導体装置およびその製造方法 |
| CN105470197B (zh) * | 2016-01-28 | 2018-03-06 | 武汉华星光电技术有限公司 | 低温多晶硅阵列基板的制作方法 |
| JP7054797B2 (ja) * | 2017-11-28 | 2022-04-15 | パナソニックＩｐマネジメント株式会社 | 半導体装置およびその製造方法 |
| JP7061941B2 (ja) * | 2018-08-06 | 2022-05-02 | 東京エレクトロン株式会社 | エッチング方法及び半導体デバイスの製造方法 |
| CN210110300U (zh) * | 2019-08-16 | 2020-02-21 | 北京京东方技术开发有限公司 | 像素驱动电路、阵列基板和显示装置 |
| CN111679454B (zh) * | 2020-06-19 | 2023-07-07 | 联合微电子中心有限责任公司 | 半导体器件的制备方法 |
-
2000
- 2000-03-29 JP JP2000090797A patent/JP4260334B2/ja not_active Expired - Fee Related
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