JP2000315648A - 走査型フォトリソグラフィにおける照明フィールド調節装置および方法 - Google Patents

走査型フォトリソグラフィにおける照明フィールド調節装置および方法

Info

Publication number
JP2000315648A
JP2000315648A JP2000008325A JP2000008325A JP2000315648A JP 2000315648 A JP2000315648 A JP 2000315648A JP 2000008325 A JP2000008325 A JP 2000008325A JP 2000008325 A JP2000008325 A JP 2000008325A JP 2000315648 A JP2000315648 A JP 2000315648A
Authority
JP
Japan
Prior art keywords
exposure
reticle
illumination
illumination field
photosensitive substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000008325A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000315648A5 (enExample
Inventor
Andrew W Mccullough
ダブリュー マッカラウ アンドリュー
Pradeep K Govil
ケイ ゴーヴィル プラディープ
Daniel N Galburt
エヌ ガルバート ダニエル
David Callan
カラン デイヴィッド
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SVG Lithography Systems Inc
Original Assignee
SVG Lithography Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SVG Lithography Systems Inc filed Critical SVG Lithography Systems Inc
Publication of JP2000315648A publication Critical patent/JP2000315648A/ja
Publication of JP2000315648A5 publication Critical patent/JP2000315648A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2000008325A 1999-01-15 2000-01-17 走査型フォトリソグラフィにおける照明フィールド調節装置および方法 Pending JP2000315648A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/232758 1999-01-15
US09/232,758 US6013401A (en) 1997-03-31 1999-01-15 Method of controlling illumination field to reduce line width variation

Publications (2)

Publication Number Publication Date
JP2000315648A true JP2000315648A (ja) 2000-11-14
JP2000315648A5 JP2000315648A5 (enExample) 2006-09-07

Family

ID=22874448

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000008325A Pending JP2000315648A (ja) 1999-01-15 2000-01-17 走査型フォトリソグラフィにおける照明フィールド調節装置および方法

Country Status (5)

Country Link
US (2) US6013401A (enExample)
EP (1) EP1020769A3 (enExample)
JP (1) JP2000315648A (enExample)
KR (1) KR100639715B1 (enExample)
CA (1) CA2294677A1 (enExample)

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KR100551209B1 (ko) * 2001-09-07 2006-02-14 에이에스엠엘 네델란즈 비.브이. 리소그래피장치 및 디바이스 제조방법
JP2006227609A (ja) * 2005-01-24 2006-08-31 Fuji Photo Film Co Ltd 露光方法、凹凸状パターンの形成方法、及び光学素子の製造方法
EP2312395A1 (en) 2003-09-29 2011-04-20 Nikon Corporation Exposure apparatus, exposure method, and method for producing a device
JP2012222363A (ja) * 2011-04-13 2012-11-12 Asml Holding Nv Ｅｕｖ照明均一性二重補正システムおよび方法
US9429495B2 (en) 2004-06-04 2016-08-30 Carl Zeiss Smt Gmbh System for measuring the image quality of an optical imaging system
JP2021039244A (ja) * 2019-09-03 2021-03-11 キヤノン株式会社 露光装置及び物品の製造方法

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US6292255B1 (en) * 1997-03-31 2001-09-18 Svg Lithography Systems, Inc. Dose correction for along scan linewidth variation
JP4370608B2 (ja) * 1998-03-09 2009-11-25 株式会社ニコン 走査露光方法、走査型露光装置及びその製造方法、並びにデバイス製造方法
US6208747B1 (en) * 1998-12-01 2001-03-27 Advanced Micro Devices Inc. Determination of scanning error in scanner by reticle rotation
US6346979B1 (en) * 1999-03-17 2002-02-12 International Business Machines Corporation Process and apparatus to adjust exposure dose in lithography systems
JP2001109161A (ja) * 1999-10-06 2001-04-20 Nikon Corp 露光装置
US6744493B1 (en) * 2000-07-05 2004-06-01 Euv Llc In-vacuum exposure shutter
US6573975B2 (en) * 2001-04-04 2003-06-03 Pradeep K. Govil DUV scanner linewidth control by mask error factor compensation
EP1491959A1 (en) * 2001-09-07 2004-12-29 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US6744494B2 (en) * 2001-12-07 2004-06-01 Motorola, Inc. Continuously adjustable neutral density area filter
US20050134825A1 (en) * 2002-02-08 2005-06-23 Carl Zeiss Smt Ag Polarization-optimized illumination system
DE10206061A1 (de) * 2002-02-08 2003-09-04 Carl Zeiss Semiconductor Mfg S Polarisationsoptimiertes Beleuchtungssystem
US6888615B2 (en) * 2002-04-23 2005-05-03 Asml Holding N.V. System and method for improving linewidth control in a lithography device by varying the angular distribution of light in an illuminator as a function of field position
US6784976B2 (en) * 2002-04-23 2004-08-31 Asml Holding N.V. System and method for improving line width control in a lithography device using an illumination system having pre-numerical aperture control
DE10261775A1 (de) * 2002-12-20 2004-07-01 Carl Zeiss Smt Ag Vorrichtung zur optischen Vermessung eines Abbildungssystems
WO2005024516A2 (de) * 2003-08-14 2005-03-17 Carl Zeiss Smt Ag Beleuchtungseinrichtung für eine mikrolithographische projektionsbelichtungsanlage
US7408616B2 (en) * 2003-09-26 2008-08-05 Carl Zeiss Smt Ag Microlithographic exposure method as well as a projection exposure system for carrying out the method
WO2005040927A2 (en) * 2003-10-18 2005-05-06 Carl Zeiss Smt Ag Device and method for illumination dose adjustments in microlithography
JP2005175040A (ja) * 2003-12-09 2005-06-30 Canon Inc 照明光学系及び露光装置
US7023524B2 (en) * 2003-12-18 2006-04-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4458329B2 (ja) * 2003-12-26 2010-04-28 キヤノン株式会社 露光装置及びデバイス製造方法
ATE511668T1 (de) 2004-02-17 2011-06-15 Zeiss Carl Smt Gmbh Beleuchtungssystem für eine mikrolithographische projektionsbelichtungsvorrichtung
DE102004011733A1 (de) 2004-03-04 2005-09-22 Carl Zeiss Smt Ag Transmissionsfiltervorrichtung
DE102004033350A1 (de) * 2004-07-09 2006-02-09 Infineon Technologies Ag Verfahren zur Korrektur ortsabhängiger Linienbreiteschwankungen bei der Halbleiterherstellung sowie Vorrichtung zum Anwenden der Korrektur
KR100689315B1 (ko) * 2004-08-10 2007-03-08 엘지.필립스 엘시디 주식회사 실리콘 박막 결정화 장치 및 이를 이용한 결정화 방법
US7119883B2 (en) * 2004-10-13 2006-10-10 Asml Holding N.V. Correcting variations in the intensity of light within an illumination field without distorting the telecentricity of the light
US20060087634A1 (en) * 2004-10-25 2006-04-27 Brown Jay M Dynamic illumination uniformity and shape control for lithography
US7362413B2 (en) * 2004-12-09 2008-04-22 Asml Netherlands B.V. Uniformity correction for lithographic apparatus
US7173688B2 (en) * 2004-12-28 2007-02-06 Asml Holding N.V. Method for calculating an intensity integral for use in lithography systems
KR20070095362A (ko) * 2005-01-24 2007-09-28 후지필름 가부시키가이샤 노광 방법, 요철 패턴의 형성 방법, 및 광학 소자의 제조방법
KR101134174B1 (ko) 2005-03-15 2012-04-09 칼 짜이스 에스엠티 게엠베하 투사 노광 방법 및 이를 위한 투사 노광 시스템
US7687211B2 (en) * 2005-04-08 2010-03-30 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for photolithography in semiconductor manufacturing
US20070139630A1 (en) * 2005-12-19 2007-06-21 Nikon Precision, Inc. Changeable Slit to Control Uniformity of Illumination
JP4898419B2 (ja) * 2006-01-05 2012-03-14 キヤノン株式会社 露光量のおよびフォーカス位置のオフセット量を求める方法、プログラムおよびデバイス製造方法
JP2007335849A (ja) * 2006-05-17 2007-12-27 Canon Inc 遮光装置および露光装置
US20080090396A1 (en) * 2006-10-06 2008-04-17 Semiconductor Energy Laboratory Co., Ltd. Light exposure apparatus and method for making semiconductor device formed using the same
DE102006059024A1 (de) 2006-12-14 2008-06-19 Carl Zeiss Smt Ag Projektionsbelichtungsanlage für die Mikrolithographie, Beleuchtungsoptik für eine derartige Projektionsbelichtungsanlage, Verfahren zum Betrieb einer derartigen Projektionsbelichtungsanlage, Verfahren zur Herstellung eines mikrostrukturierten Bauteils sowie durch das Verfahren hergestelltes mikrostrukturiertes Bauteil
JP4838698B2 (ja) * 2006-12-19 2011-12-14 キヤノン株式会社 露光装置およびデバイス製造方法
EP2126636B1 (en) 2007-01-30 2012-06-13 Carl Zeiss SMT GmbH Illumination system of a microlithographic projection exposure apparatus
US7714984B2 (en) * 2007-03-28 2010-05-11 Asml Holding N.V. Residual pupil asymmetry compensator for a lithography scanner
JP2009071193A (ja) * 2007-09-14 2009-04-02 Canon Inc 露光装置及びデバイスの製造方法
DE102008013229B4 (de) * 2007-12-11 2015-04-09 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die Mikrolithographie
DE102008015631A1 (de) * 2008-03-20 2009-09-24 Carl Zeiss Sms Gmbh Verfahren und Vorrichtung zur Vermessung von Masken für die Photolithographie
DE102008001553B4 (de) * 2008-05-05 2015-04-30 Carl Zeiss Smt Gmbh Komponente zur Einstellung einer scanintegrierten Beleuchtungsenergie in einer Objektebene einer Mikrolithographie-Projektionsbelichtungsanlage
CN102203675B (zh) * 2008-10-31 2014-02-26 卡尔蔡司Smt有限责任公司 用于euv微光刻的照明光学部件
JP2010123755A (ja) * 2008-11-19 2010-06-03 Canon Inc 露光装置及びデバイス製造方法
CN101561636B (zh) * 2009-05-19 2011-06-29 上海微电子装备有限公司 一种光刻曝光剂量控制装置与方法
US8767179B2 (en) * 2009-12-15 2014-07-01 Micron Technology, Inc. Imaging methods in scanning photolithography and a scanning photolithography device used in printing an image of a reticle onto a photosensitive substrate
DE102011005881A1 (de) 2011-03-22 2012-05-03 Carl Zeiss Smt Gmbh Verfahren zur Einstellung eines Beleuchtungssystems einer Projektionsbelichtungsanlage für die Projektionslithographie
DE102012210071A1 (de) * 2012-06-15 2013-12-19 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage sowie Verfahren zum Steuern einer Projektionsbelichtungsanlage
DE102017200637A1 (de) * 2017-01-17 2017-11-02 Carl Zeiss Smt Gmbh Mikrolithographisches Belichtungsverfahren
WO2020216643A1 (en) * 2019-04-26 2020-10-29 Asml Holding N.V. Lithographic apparatus and illumination uniformity correction system
CN114945872A (zh) 2020-01-14 2022-08-26 Asml荷兰有限公司 用于漂移补偿的光刻装置和方法

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Cited By (16)

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KR100551209B1 (ko) * 2001-09-07 2006-02-14 에이에스엠엘 네델란즈 비.브이. 리소그래피장치 및 디바이스 제조방법
EP3093711A2 (en) 2003-09-29 2016-11-16 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
EP2312395A1 (en) 2003-09-29 2011-04-20 Nikon Corporation Exposure apparatus, exposure method, and method for producing a device
EP2320273A1 (en) 2003-09-29 2011-05-11 Nikon Corporation Exposure apparatus, exposure method, and method for producing a device
EP2837969A1 (en) 2003-09-29 2015-02-18 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US10025194B2 (en) 2003-09-29 2018-07-17 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
EP3093710A2 (en) 2003-09-29 2016-11-16 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US9429495B2 (en) 2004-06-04 2016-08-30 Carl Zeiss Smt Gmbh System for measuring the image quality of an optical imaging system
JP2006227609A (ja) * 2005-01-24 2006-08-31 Fuji Photo Film Co Ltd 露光方法、凹凸状パターンの形成方法、及び光学素子の製造方法
JP2012222363A (ja) * 2011-04-13 2012-11-12 Asml Holding Nv Ｅｕｖ照明均一性二重補正システムおよび方法
US9134620B2 (en) 2011-04-13 2015-09-15 Asml Holding N.V. Double EUV illumination uniformity correction system and method
JP2021039244A (ja) * 2019-09-03 2021-03-11 キヤノン株式会社 露光装置及び物品の製造方法
WO2021044755A1 (ja) * 2019-09-03 2021-03-11 キヤノン株式会社 露光装置及び物品の製造方法
KR20220042453A (ko) * 2019-09-03 2022-04-05 캐논 가부시끼가이샤 노광 장치 및 물품의 제조 방법
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KR102746191B1 (ko) 2019-09-03 2024-12-24 캐논 가부시끼가이샤 노광 장치 및 물품의 제조 방법

Also Published As

Publication number Publication date
CA2294677A1 (en) 2000-07-15
US6097474A (en) 2000-08-01
US6013401A (en) 2000-01-11
KR100639715B1 (ko) 2006-10-27
EP1020769A3 (en) 2002-12-11
EP1020769A2 (en) 2000-07-19
KR20000076463A (ko) 2000-12-26

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