KR100639715B1 - 동적으로 조절가능한 고 분해능의 조절가능한 슬릿 - Google Patents

동적으로 조절가능한 고 분해능의 조절가능한 슬릿

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Publication number
KR100639715B1
KR100639715B1 KR1020000001639A KR20000001639A KR100639715B1 KR 100639715 B1 KR100639715 B1 KR 100639715B1 KR 1020000001639 A KR1020000001639 A KR 1020000001639A KR 20000001639 A KR20000001639 A KR 20000001639A KR 100639715 B1 KR100639715 B1 KR 100639715B1
Authority
KR
South Korea
Prior art keywords
illumination field
reticle
exposure
photosensitive substrate
illumination
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020000001639A
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English (en)
Korean (ko)
Other versions
KR20000076463A (ko
Inventor
맥컬로우앤드류더블유.
고빌프라딥케이.
캘버트다니엘엔.
캘랜데이비드
Original Assignee
에스브이지 리도그래피 시스템즈, 아이엔씨.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 에스브이지 리도그래피 시스템즈, 아이엔씨. filed Critical 에스브이지 리도그래피 시스템즈, 아이엔씨.
Publication of KR20000076463A publication Critical patent/KR20000076463A/ko
Application granted granted Critical
Publication of KR100639715B1 publication Critical patent/KR100639715B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020000001639A 1999-01-15 2000-01-14 동적으로 조절가능한 고 분해능의 조절가능한 슬릿 Expired - Fee Related KR100639715B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/232,758 US6013401A (en) 1997-03-31 1999-01-15 Method of controlling illumination field to reduce line width variation
US9/232,758 1999-01-15
US09/232,758 1999-01-15

Publications (2)

Publication Number Publication Date
KR20000076463A KR20000076463A (ko) 2000-12-26
KR100639715B1 true KR100639715B1 (ko) 2006-10-27

Family

ID=22874448

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020000001639A Expired - Fee Related KR100639715B1 (ko) 1999-01-15 2000-01-14 동적으로 조절가능한 고 분해능의 조절가능한 슬릿

Country Status (5)

Country Link
US (2) US6013401A (enExample)
EP (1) EP1020769A3 (enExample)
JP (1) JP2000315648A (enExample)
KR (1) KR100639715B1 (enExample)
CA (1) CA2294677A1 (enExample)

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EP1491959A1 (en) * 2001-09-07 2004-12-29 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
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DE10206061A1 (de) * 2002-02-08 2003-09-04 Carl Zeiss Semiconductor Mfg S Polarisationsoptimiertes Beleuchtungssystem
US6784976B2 (en) * 2002-04-23 2004-08-31 Asml Holding N.V. System and method for improving line width control in a lithography device using an illumination system having pre-numerical aperture control
US6888615B2 (en) * 2002-04-23 2005-05-03 Asml Holding N.V. System and method for improving linewidth control in a lithography device by varying the angular distribution of light in an illuminator as a function of field position
DE10261775A1 (de) 2002-12-20 2004-07-01 Carl Zeiss Smt Ag Vorrichtung zur optischen Vermessung eines Abbildungssystems
WO2005024516A2 (de) * 2003-08-14 2005-03-17 Carl Zeiss Smt Ag Beleuchtungseinrichtung für eine mikrolithographische projektionsbelichtungsanlage
US7408616B2 (en) * 2003-09-26 2008-08-05 Carl Zeiss Smt Ag Microlithographic exposure method as well as a projection exposure system for carrying out the method
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WO2005040927A2 (en) * 2003-10-18 2005-05-06 Carl Zeiss Smt Ag Device and method for illumination dose adjustments in microlithography
JP2005175040A (ja) * 2003-12-09 2005-06-30 Canon Inc 照明光学系及び露光装置
US7023524B2 (en) 2003-12-18 2006-04-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
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US7119883B2 (en) * 2004-10-13 2006-10-10 Asml Holding N.V. Correcting variations in the intensity of light within an illumination field without distorting the telecentricity of the light
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US7362413B2 (en) * 2004-12-09 2008-04-22 Asml Netherlands B.V. Uniformity correction for lithographic apparatus
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JP2007335849A (ja) * 2006-05-17 2007-12-27 Canon Inc 遮光装置および露光装置
US20080090396A1 (en) * 2006-10-06 2008-04-17 Semiconductor Energy Laboratory Co., Ltd. Light exposure apparatus and method for making semiconductor device formed using the same
DE102006059024A1 (de) * 2006-12-14 2008-06-19 Carl Zeiss Smt Ag Projektionsbelichtungsanlage für die Mikrolithographie, Beleuchtungsoptik für eine derartige Projektionsbelichtungsanlage, Verfahren zum Betrieb einer derartigen Projektionsbelichtungsanlage, Verfahren zur Herstellung eines mikrostrukturierten Bauteils sowie durch das Verfahren hergestelltes mikrostrukturiertes Bauteil
JP4838698B2 (ja) * 2006-12-19 2011-12-14 キヤノン株式会社 露光装置およびデバイス製造方法
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US7714984B2 (en) * 2007-03-28 2010-05-11 Asml Holding N.V. Residual pupil asymmetry compensator for a lithography scanner
JP2009071193A (ja) * 2007-09-14 2009-04-02 Canon Inc 露光装置及びデバイスの製造方法
DE102008013229B4 (de) * 2007-12-11 2015-04-09 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die Mikrolithographie
DE102008015631A1 (de) * 2008-03-20 2009-09-24 Carl Zeiss Sms Gmbh Verfahren und Vorrichtung zur Vermessung von Masken für die Photolithographie
DE102008001553B4 (de) * 2008-05-05 2015-04-30 Carl Zeiss Smt Gmbh Komponente zur Einstellung einer scanintegrierten Beleuchtungsenergie in einer Objektebene einer Mikrolithographie-Projektionsbelichtungsanlage
CN102203675B (zh) * 2008-10-31 2014-02-26 卡尔蔡司Smt有限责任公司 用于euv微光刻的照明光学部件
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CN101561636B (zh) * 2009-05-19 2011-06-29 上海微电子装备有限公司 一种光刻曝光剂量控制装置与方法
US8767179B2 (en) * 2009-12-15 2014-07-01 Micron Technology, Inc. Imaging methods in scanning photolithography and a scanning photolithography device used in printing an image of a reticle onto a photosensitive substrate
DE102011005881A1 (de) * 2011-03-22 2012-05-03 Carl Zeiss Smt Gmbh Verfahren zur Einstellung eines Beleuchtungssystems einer Projektionsbelichtungsanlage für die Projektionslithographie
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NL2025336A (en) * 2019-04-26 2020-10-30 Asml Holding Nv Lithographic apparatus and illumination uniformity correction system
JP7446069B2 (ja) 2019-09-03 2024-03-08 キヤノン株式会社 露光装置及び物品の製造方法
WO2021144159A1 (en) 2020-01-14 2021-07-22 Asml Netherlands B.V. Lithographic apparatus and method for drift compensation

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Also Published As

Publication number Publication date
JP2000315648A (ja) 2000-11-14
KR20000076463A (ko) 2000-12-26
CA2294677A1 (en) 2000-07-15
US6097474A (en) 2000-08-01
US6013401A (en) 2000-01-11
EP1020769A2 (en) 2000-07-19
EP1020769A3 (en) 2002-12-11

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