JP2000298345A5 - - Google Patents
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- Publication number
- JP2000298345A5 JP2000298345A5 JP1999106856A JP10685699A JP2000298345A5 JP 2000298345 A5 JP2000298345 A5 JP 2000298345A5 JP 1999106856 A JP1999106856 A JP 1999106856A JP 10685699 A JP10685699 A JP 10685699A JP 2000298345 A5 JP2000298345 A5 JP 2000298345A5
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- pattern
- exposure
- minutes
- heated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010894 electron beam technology Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 3
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- SJMYWORNLPSJQO-UHFFFAOYSA-N tert-butyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC(C)(C)C SJMYWORNLPSJQO-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- FAYMLNNRGCYLSR-UHFFFAOYSA-M triphenylsulfonium triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 FAYMLNNRGCYLSR-UHFFFAOYSA-M 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10685699A JP2000298345A (ja) | 1999-04-14 | 1999-04-14 | ポジ型感放射線性組成物 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10685699A JP2000298345A (ja) | 1999-04-14 | 1999-04-14 | ポジ型感放射線性組成物 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000298345A JP2000298345A (ja) | 2000-10-24 |
| JP2000298345A5 true JP2000298345A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 2006-05-25 |
Family
ID=14444243
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10685699A Pending JP2000298345A (ja) | 1999-04-14 | 1999-04-14 | ポジ型感放射線性組成物 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000298345A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4923376B2 (ja) | 2000-04-04 | 2012-04-25 | ダイキン工業株式会社 | 酸反応性基を有する新規なフッ素ポリマーおよびそれを用いた化学増幅型フォトレジスト組成物 |
| KR20020038283A (ko) * | 2000-11-17 | 2002-05-23 | 박종섭 | 포토레지스트 단량체, 그의 중합체 및 이를 함유하는포토레지스트 조성물 |
| CA2560392A1 (en) | 2004-03-26 | 2005-10-06 | Daikin Industries, Ltd. | Surface treating agent, fluorine-containing monomer and fluorine-containing polymer |
| CA2560388A1 (en) * | 2004-03-26 | 2005-10-06 | Daikin Industries, Ltd. | Fluorine-containing monomer, fluorine-containing polymer and surface treating agent |
| JP2005345897A (ja) * | 2004-06-04 | 2005-12-15 | Asahi Glass Co Ltd | 撥水性組成物、撥水性薄膜および撥水性親水性パターンを有する薄膜 |
| US20100203450A1 (en) * | 2009-02-11 | 2010-08-12 | International Business Machines Corporation | Photoresist compositions and methods of use |
| JP6707875B2 (ja) * | 2016-01-29 | 2020-06-10 | 日本ゼオン株式会社 | 重合体及びポジ型レジスト組成物 |
| KR102754360B1 (ko) * | 2016-01-29 | 2025-01-13 | 니폰 제온 가부시키가이샤 | 중합체, 포지티브형 레지스트 조성물, 및 레지스트 패턴 형성 방법 |
| JP7172495B2 (ja) * | 2018-11-22 | 2022-11-16 | 日本ゼオン株式会社 | 重合体及びポジ型レジスト組成物 |
| JP7238454B2 (ja) * | 2019-02-19 | 2023-03-14 | 日本ゼオン株式会社 | レジストパターン形成方法 |
| US11262654B2 (en) * | 2019-12-27 | 2022-03-01 | Intel Corporation | Chain scission resist compositions for EUV lithography applications |
| JPWO2023047992A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 2021-09-21 | 2023-03-30 | ||
| WO2024122346A1 (ja) * | 2022-12-07 | 2024-06-13 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、及び電子デバイスの製造方法 |
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1999
- 1999-04-14 JP JP10685699A patent/JP2000298345A/ja active Pending