JP2000265272A - タングステン層の形成方法及びタングステン層の積層構造 - Google Patents

タングステン層の形成方法及びタングステン層の積層構造

Info

Publication number
JP2000265272A
JP2000265272A JP2000002913A JP2000002913A JP2000265272A JP 2000265272 A JP2000265272 A JP 2000265272A JP 2000002913 A JP2000002913 A JP 2000002913A JP 2000002913 A JP2000002913 A JP 2000002913A JP 2000265272 A JP2000265272 A JP 2000265272A
Authority
JP
Japan
Prior art keywords
film
tungsten
gas
film forming
tungsten film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000002913A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000265272A5 (enExample
Inventor
Yasushi Aeba
康 饗場
Yukio Koike
幸男 小池
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2000002913A priority Critical patent/JP2000265272A/ja
Publication of JP2000265272A publication Critical patent/JP2000265272A/ja
Publication of JP2000265272A5 publication Critical patent/JP2000265272A5/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C23C16/0281—Deposition of sub-layers, e.g. to promote the adhesion of the main coating of metallic sub-layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C23C16/14—Deposition of only one other metal element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2000002913A 1999-01-13 2000-01-11 タングステン層の形成方法及びタングステン層の積層構造 Pending JP2000265272A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000002913A JP2000265272A (ja) 1999-01-13 2000-01-11 タングステン層の形成方法及びタングステン層の積層構造

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP650699 1999-01-13
JP11-6506 1999-01-13
JP2000002913A JP2000265272A (ja) 1999-01-13 2000-01-11 タングステン層の形成方法及びタングステン層の積層構造

Publications (2)

Publication Number Publication Date
JP2000265272A true JP2000265272A (ja) 2000-09-26
JP2000265272A5 JP2000265272A5 (enExample) 2007-03-01

Family

ID=11640328

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000002913A Pending JP2000265272A (ja) 1999-01-13 2000-01-11 タングステン層の形成方法及びタングステン層の積層構造

Country Status (5)

Country Link
US (1) US6387445B1 (enExample)
JP (1) JP2000265272A (enExample)
KR (1) KR100509225B1 (enExample)
TW (1) TW451305B (enExample)
WO (1) WO2000042232A1 (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002129328A (ja) * 2000-10-31 2002-05-09 Applied Materials Inc 気相堆積方法及び装置
JP2002146531A (ja) * 2000-10-31 2002-05-22 Applied Materials Inc 気相堆積方法及び装置
JP2003193233A (ja) * 2001-08-14 2003-07-09 Tokyo Electron Ltd タングステン膜の形成方法
JP2004273764A (ja) * 2003-03-07 2004-09-30 Tokyo Electron Ltd タングステン膜の形成方法
JP2006249580A (ja) * 2005-02-10 2006-09-21 Tokyo Electron Ltd 薄膜の積層構造、その形成方法、成膜装置及び記憶媒体
US8100147B2 (en) 1999-06-15 2012-01-24 Tokyo Electron Limited Particle-measuring system and particle-measuring method
JP2013122068A (ja) * 2011-12-09 2013-06-20 Ulvac Japan Ltd タングステン化合物膜の形成方法、及び半導体装置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4103461B2 (ja) * 2001-08-24 2008-06-18 東京エレクトロン株式会社 成膜方法
KR101541779B1 (ko) 2009-01-16 2015-08-05 삼성전자주식회사 반도체 소자 및 이의 제조방법
WO2016046909A1 (ja) * 2014-09-24 2016-03-31 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、半導体装置およびプログラム

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08124876A (ja) * 1994-10-27 1996-05-17 Sony Corp 高融点金属膜の成膜方法
JP2001525492A (ja) * 1997-12-03 2001-12-11 アプライド マテリアルズ インコーポレイテッド 金属層を形成する方法及び装置

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NL8800221A (nl) * 1988-01-29 1989-08-16 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
US5231055A (en) * 1989-01-13 1993-07-27 Texas Instruments Incorporated Method of forming composite interconnect system
JP2844693B2 (ja) 1989-07-13 1999-01-06 ソニー株式会社 高融点金属膜の形成方法
US5028565A (en) * 1989-08-25 1991-07-02 Applied Materials, Inc. Process for CVD deposition of tungsten layer on semiconductor wafer
JPH05160070A (ja) * 1991-05-31 1993-06-25 Texas Instr Inc <Ti> 半導体装置の接点とその製法
US5227336A (en) * 1991-12-27 1993-07-13 Small Power Communication Systems Research Laboratories Co., Ltd. Tungsten chemical vapor deposition method
CA2067565C (en) * 1992-04-29 1999-02-16 Ismail T. Emesh Deposition of tungsten
US5342652A (en) * 1992-06-15 1994-08-30 Materials Research Corporation Method of nucleating tungsten on titanium nitride by CVD without silane
KR950012738B1 (ko) * 1992-12-10 1995-10-20 현대전자산업주식회사 반도체소자의 텅스텐 콘택 플러그 제조방법
JPH06275624A (ja) 1993-03-19 1994-09-30 Miyagi Oki Denki Kk 導電層の形成方法
US5489552A (en) * 1994-12-30 1996-02-06 At&T Corp. Multiple layer tungsten deposition process
US5643632A (en) * 1995-10-13 1997-07-01 Mosel Vitelic, Inc. Tungsten chemical vapor deposition process for suppression of volcano formation
JP3082683B2 (ja) 1996-10-21 2000-08-28 日本電気株式会社 タングステンｃｖｄ成膜方法
US5804249A (en) * 1997-02-07 1998-09-08 Lsi Logic Corporation Multistep tungsten CVD process with amorphization step
US6156382A (en) * 1997-05-16 2000-12-05 Applied Materials, Inc. Chemical vapor deposition process for depositing tungsten
US6099904A (en) * 1997-12-02 2000-08-08 Applied Materials, Inc. Low resistivity W using B2 H6 nucleation step

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08124876A (ja) * 1994-10-27 1996-05-17 Sony Corp 高融点金属膜の成膜方法
JP2001525492A (ja) * 1997-12-03 2001-12-11 アプライド マテリアルズ インコーポレイテッド 金属層を形成する方法及び装置

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8100147B2 (en) 1999-06-15 2012-01-24 Tokyo Electron Limited Particle-measuring system and particle-measuring method
JP2002129328A (ja) * 2000-10-31 2002-05-09 Applied Materials Inc 気相堆積方法及び装置
JP2002146531A (ja) * 2000-10-31 2002-05-22 Applied Materials Inc 気相堆積方法及び装置
JP2003193233A (ja) * 2001-08-14 2003-07-09 Tokyo Electron Ltd タングステン膜の形成方法
JP2004273764A (ja) * 2003-03-07 2004-09-30 Tokyo Electron Ltd タングステン膜の形成方法
KR100783845B1 (ko) * 2003-03-07 2007-12-10 동경 엘렉트론 주식회사 텅스텐막의 형성 방법
KR100785534B1 (ko) * 2003-03-07 2007-12-12 동경 엘렉트론 주식회사 텅스텐막의 형성 방법
JP2006249580A (ja) * 2005-02-10 2006-09-21 Tokyo Electron Ltd 薄膜の積層構造、その形成方法、成膜装置及び記憶媒体
JP2013122068A (ja) * 2011-12-09 2013-06-20 Ulvac Japan Ltd タングステン化合物膜の形成方法、及び半導体装置

Also Published As

Publication number Publication date
KR20010041760A (ko) 2001-05-25
US6387445B1 (en) 2002-05-14
TW451305B (en) 2001-08-21
WO2000042232A1 (en) 2000-07-20
KR100509225B1 (ko) 2005-08-18

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