KR100509225B1 - 텅스텐층의 형성방법 및 텅스텐층의 적층구조 - Google Patents

텅스텐층의 형성방법 및 텅스텐층의 적층구조 Download PDF

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Publication number
KR100509225B1
KR100509225B1 KR10-2000-7010004A KR20007010004A KR100509225B1 KR 100509225 B1 KR100509225 B1 KR 100509225B1 KR 20007010004 A KR20007010004 A KR 20007010004A KR 100509225 B1 KR100509225 B1 KR 100509225B1
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KR
South Korea
Prior art keywords
gas
tungsten
film
forming step
film forming
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Expired - Fee Related
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KR10-2000-7010004A
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English (en)
Korean (ko)
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KR20010041760A (ko
Inventor
아이바야스시
고이케유키오
Original Assignee
동경 엘렉트론 주식회사
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C23C16/0281—Deposition of sub-layers, e.g. to promote the adhesion of the main coating of metallic sub-layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C23C16/14—Deposition of only one other metal element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
KR10-2000-7010004A 1999-01-13 2000-01-11 텅스텐층의 형성방법 및 텅스텐층의 적층구조 Expired - Fee Related KR100509225B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP6506 1999-01-13
JP650699 1999-01-13
PCT/JP2000/000078 WO2000042232A1 (en) 1999-01-13 2000-01-11 Tungsten layer forming method and laminate structure of tungsten layer

Publications (2)

Publication Number Publication Date
KR20010041760A KR20010041760A (ko) 2001-05-25
KR100509225B1 true KR100509225B1 (ko) 2005-08-18

Family

ID=11640328

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2000-7010004A Expired - Fee Related KR100509225B1 (ko) 1999-01-13 2000-01-11 텅스텐층의 형성방법 및 텅스텐층의 적층구조

Country Status (5)

Country Link
US (1) US6387445B1 (enExample)
JP (1) JP2000265272A (enExample)
KR (1) KR100509225B1 (enExample)
TW (1) TW451305B (enExample)
WO (1) WO2000042232A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101541779B1 (ko) 2009-01-16 2015-08-05 삼성전자주식회사 반도체 소자 및 이의 제조방법

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7515264B2 (en) 1999-06-15 2009-04-07 Tokyo Electron Limited Particle-measuring system and particle-measuring method
JP2002146531A (ja) * 2000-10-31 2002-05-22 Applied Materials Inc 気相堆積方法及び装置
JP2002129328A (ja) * 2000-10-31 2002-05-09 Applied Materials Inc 気相堆積方法及び装置
JP4032872B2 (ja) * 2001-08-14 2008-01-16 東京エレクトロン株式会社 タングステン膜の形成方法
JP4103461B2 (ja) * 2001-08-24 2008-06-18 東京エレクトロン株式会社 成膜方法
JP3956049B2 (ja) * 2003-03-07 2007-08-08 東京エレクトロン株式会社 タングステン膜の形成方法
JP2006249580A (ja) * 2005-02-10 2006-09-21 Tokyo Electron Ltd 薄膜の積層構造、その形成方法、成膜装置及び記憶媒体
JP5925476B2 (ja) * 2011-12-09 2016-05-25 株式会社アルバック タングステン化合物膜の形成方法
WO2016046909A1 (ja) * 2014-09-24 2016-03-31 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、半導体装置およびプログラム

Citations (1)

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WO1998051838A1 (en) * 1997-05-16 1998-11-19 Applied Materials, Inc. Low resistivity w using b2h¿6?

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NL8800221A (nl) * 1988-01-29 1989-08-16 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
US5231055A (en) * 1989-01-13 1993-07-27 Texas Instruments Incorporated Method of forming composite interconnect system
JP2844693B2 (ja) 1989-07-13 1999-01-06 ソニー株式会社 高融点金属膜の形成方法
US5028565A (en) 1989-08-25 1991-07-02 Applied Materials, Inc. Process for CVD deposition of tungsten layer on semiconductor wafer
JPH05160070A (ja) * 1991-05-31 1993-06-25 Texas Instr Inc <Ti> 半導体装置の接点とその製法
US5227336A (en) * 1991-12-27 1993-07-13 Small Power Communication Systems Research Laboratories Co., Ltd. Tungsten chemical vapor deposition method
CA2067565C (en) * 1992-04-29 1999-02-16 Ismail T. Emesh Deposition of tungsten
US5342652A (en) 1992-06-15 1994-08-30 Materials Research Corporation Method of nucleating tungsten on titanium nitride by CVD without silane
KR950012738B1 (ko) * 1992-12-10 1995-10-20 현대전자산업주식회사 반도체소자의 텅스텐 콘택 플러그 제조방법
JPH06275624A (ja) 1993-03-19 1994-09-30 Miyagi Oki Denki Kk 導電層の形成方法
JP3358328B2 (ja) * 1994-10-27 2002-12-16 ソニー株式会社 高融点金属膜の成膜方法
US5489552A (en) * 1994-12-30 1996-02-06 At&T Corp. Multiple layer tungsten deposition process
US5643632A (en) * 1995-10-13 1997-07-01 Mosel Vitelic, Inc. Tungsten chemical vapor deposition process for suppression of volcano formation
JP3082683B2 (ja) 1996-10-21 2000-08-28 日本電気株式会社 タングステンｃｖｄ成膜方法
US5804249A (en) * 1997-02-07 1998-09-08 Lsi Logic Corporation Multistep tungsten CVD process with amorphization step
US6099904A (en) * 1997-12-02 2000-08-08 Applied Materials, Inc. Low resistivity W using B2 H6 nucleation step
US6271129B1 (en) * 1997-12-03 2001-08-07 Applied Materials, Inc. Method for forming a gap filling refractory metal layer having reduced stress

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998051838A1 (en) * 1997-05-16 1998-11-19 Applied Materials, Inc. Low resistivity w using b2h¿6?

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101541779B1 (ko) 2009-01-16 2015-08-05 삼성전자주식회사 반도체 소자 및 이의 제조방법

Also Published As

Publication number Publication date
WO2000042232A1 (en) 2000-07-20
US6387445B1 (en) 2002-05-14
JP2000265272A (ja) 2000-09-26
KR20010041760A (ko) 2001-05-25
TW451305B (en) 2001-08-21

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