JP2000265272A5 - - Google Patents

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Publication number
JP2000265272A5
JP2000265272A5 JP2000002913A JP2000002913A JP2000265272A5 JP 2000265272 A5 JP2000265272 A5 JP 2000265272A5 JP 2000002913 A JP2000002913 A JP 2000002913A JP 2000002913 A JP2000002913 A JP 2000002913A JP 2000265272 A5 JP2000265272 A5 JP 2000265272A5
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JP
Japan
Prior art keywords
forming
tungsten
film
gas
forming step
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000002913A
Other languages
English (en)
Japanese (ja)
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JP2000265272A (ja
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Publication date
Application filed filed Critical
Priority to JP2000002913A priority Critical patent/JP2000265272A/ja
Priority claimed from JP2000002913A external-priority patent/JP2000265272A/ja
Publication of JP2000265272A publication Critical patent/JP2000265272A/ja
Publication of JP2000265272A5 publication Critical patent/JP2000265272A5/ja
Pending legal-status Critical Current

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JP2000002913A 1999-01-13 2000-01-11 タングステン層の形成方法及びタングステン層の積層構造 Pending JP2000265272A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000002913A JP2000265272A (ja) 1999-01-13 2000-01-11 タングステン層の形成方法及びタングステン層の積層構造

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP650699 1999-01-13
JP11-6506 1999-01-13
JP2000002913A JP2000265272A (ja) 1999-01-13 2000-01-11 タングステン層の形成方法及びタングステン層の積層構造

Publications (2)

Publication Number Publication Date
JP2000265272A JP2000265272A (ja) 2000-09-26
JP2000265272A5 true JP2000265272A5 (enExample) 2007-03-01

Family

ID=11640328

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000002913A Pending JP2000265272A (ja) 1999-01-13 2000-01-11 タングステン層の形成方法及びタングステン層の積層構造

Country Status (5)

Country Link
US (1) US6387445B1 (enExample)
JP (1) JP2000265272A (enExample)
KR (1) KR100509225B1 (enExample)
TW (1) TW451305B (enExample)
WO (1) WO2000042232A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7515264B2 (en) 1999-06-15 2009-04-07 Tokyo Electron Limited Particle-measuring system and particle-measuring method
JP2002146531A (ja) * 2000-10-31 2002-05-22 Applied Materials Inc 気相堆積方法及び装置
JP2002129328A (ja) * 2000-10-31 2002-05-09 Applied Materials Inc 気相堆積方法及び装置
JP4032872B2 (ja) * 2001-08-14 2008-01-16 東京エレクトロン株式会社 タングステン膜の形成方法
JP4103461B2 (ja) * 2001-08-24 2008-06-18 東京エレクトロン株式会社 成膜方法
JP3956049B2 (ja) * 2003-03-07 2007-08-08 東京エレクトロン株式会社 タングステン膜の形成方法
JP2006249580A (ja) * 2005-02-10 2006-09-21 Tokyo Electron Ltd 薄膜の積層構造、その形成方法、成膜装置及び記憶媒体
KR101541779B1 (ko) 2009-01-16 2015-08-05 삼성전자주식회사 반도체 소자 및 이의 제조방법
JP5925476B2 (ja) * 2011-12-09 2016-05-25 株式会社アルバック タングステン化合物膜の形成方法
WO2016046909A1 (ja) * 2014-09-24 2016-03-31 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、半導体装置およびプログラム

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8800221A (nl) * 1988-01-29 1989-08-16 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
US5231055A (en) * 1989-01-13 1993-07-27 Texas Instruments Incorporated Method of forming composite interconnect system
JP2844693B2 (ja) 1989-07-13 1999-01-06 ソニー株式会社 高融点金属膜の形成方法
US5028565A (en) * 1989-08-25 1991-07-02 Applied Materials, Inc. Process for CVD deposition of tungsten layer on semiconductor wafer
JPH05160070A (ja) * 1991-05-31 1993-06-25 Texas Instr Inc <Ti> 半導体装置の接点とその製法
US5227336A (en) * 1991-12-27 1993-07-13 Small Power Communication Systems Research Laboratories Co., Ltd. Tungsten chemical vapor deposition method
CA2067565C (en) * 1992-04-29 1999-02-16 Ismail T. Emesh Deposition of tungsten
US5342652A (en) * 1992-06-15 1994-08-30 Materials Research Corporation Method of nucleating tungsten on titanium nitride by CVD without silane
KR950012738B1 (ko) * 1992-12-10 1995-10-20 현대전자산업주식회사 반도체소자의 텅스텐 콘택 플러그 제조방법
JPH06275624A (ja) 1993-03-19 1994-09-30 Miyagi Oki Denki Kk 導電層の形成方法
JP3358328B2 (ja) * 1994-10-27 2002-12-16 ソニー株式会社 高融点金属膜の成膜方法
US5489552A (en) * 1994-12-30 1996-02-06 At&T Corp. Multiple layer tungsten deposition process
US5643632A (en) * 1995-10-13 1997-07-01 Mosel Vitelic, Inc. Tungsten chemical vapor deposition process for suppression of volcano formation
JP3082683B2 (ja) 1996-10-21 2000-08-28 日本電気株式会社 タングステンｃｖｄ成膜方法
US5804249A (en) * 1997-02-07 1998-09-08 Lsi Logic Corporation Multistep tungsten CVD process with amorphization step
US6156382A (en) * 1997-05-16 2000-12-05 Applied Materials, Inc. Chemical vapor deposition process for depositing tungsten
US6099904A (en) * 1997-12-02 2000-08-08 Applied Materials, Inc. Low resistivity W using B2 H6 nucleation step
US6271129B1 (en) * 1997-12-03 2001-08-07 Applied Materials, Inc. Method for forming a gap filling refractory metal layer having reduced stress

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