JP2000260709A - 半導体薄膜の結晶化方法及びそれを用いた半導体装置 - Google Patents

半導体薄膜の結晶化方法及びそれを用いた半導体装置

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Publication number
JP2000260709A
JP2000260709A JP11061082A JP6108299A JP2000260709A JP 2000260709 A JP2000260709 A JP 2000260709A JP 11061082 A JP11061082 A JP 11061082A JP 6108299 A JP6108299 A JP 6108299A JP 2000260709 A JP2000260709 A JP 2000260709A
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JP
Japan
Prior art keywords
thin film
region
film
film pattern
semiconductor thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11061082A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000260709A5 (enrdf_load_stackoverflow
Inventor
Fumiyo Takeuchi
文代 竹内
Katsuyuki Suga
勝行 菅
Yasuyoshi Mishima
康由 三島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11061082A priority Critical patent/JP2000260709A/ja
Publication of JP2000260709A publication Critical patent/JP2000260709A/ja
Publication of JP2000260709A5 publication Critical patent/JP2000260709A5/ja
Pending legal-status Critical Current

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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP11061082A 1999-03-09 1999-03-09 半導体薄膜の結晶化方法及びそれを用いた半導体装置 Pending JP2000260709A (ja)

Priority Applications (1)

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JP11061082A JP2000260709A (ja) 1999-03-09 1999-03-09 半導体薄膜の結晶化方法及びそれを用いた半導体装置

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JP11061082A JP2000260709A (ja) 1999-03-09 1999-03-09 半導体薄膜の結晶化方法及びそれを用いた半導体装置

Publications (2)

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JP2000260709A true JP2000260709A (ja) 2000-09-22
JP2000260709A5 JP2000260709A5 (enrdf_load_stackoverflow) 2005-06-16

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JP11061082A Pending JP2000260709A (ja) 1999-03-09 1999-03-09 半導体薄膜の結晶化方法及びそれを用いた半導体装置

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JP (1) JP2000260709A (enrdf_load_stackoverflow)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002367905A (ja) * 2001-04-06 2002-12-20 Seiko Epson Corp 薄膜半導体装置の製造方法
JP2004207691A (ja) * 2002-12-11 2004-07-22 Sharp Corp 半導体薄膜の製造方法、その製造方法により得られる半導体薄膜、その半導体薄膜を用いる半導体素子および半導体薄膜の製造装置
JP2005045209A (ja) * 2003-07-09 2005-02-17 Mitsubishi Electric Corp レーザアニール方法
JP2005175211A (ja) * 2003-12-11 2005-06-30 Sharp Corp 半導体膜の製造方法および製造装置
KR100507553B1 (ko) * 2001-09-25 2005-08-09 샤프 가부시키가이샤 결정성 반도체막, 그의 제조방법, 반도체장치 및 그의제조방법
KR100682439B1 (ko) * 2004-01-23 2007-02-15 샤프 가부시키가이샤 반도체 박막의 제조 방법
JP2007095989A (ja) * 2005-09-29 2007-04-12 Dainippon Printing Co Ltd 薄膜トランジスタの製造方法
JP2007123910A (ja) * 2000-11-29 2007-05-17 Semiconductor Energy Lab Co Ltd 薄膜トランジスタの作製方法
JP2011014841A (ja) * 2009-07-06 2011-01-20 Kaneka Corp 積層型光電変換装置の製造方法
JP2011082542A (ja) * 2000-11-29 2011-04-21 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US9236487B2 (en) 2011-08-30 2016-01-12 Joled Inc. Method of manufacturing substrate having thin film thereabove, method of manufacturing thin-film-device substrate, thin-film substrate, and thin-film-device substrate
WO2020158424A1 (ja) * 2019-01-31 2020-08-06 株式会社ブイ・テクノロジー レーザアニール方法、レーザアニール装置、および結晶化シリコン膜基板

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011082542A (ja) * 2000-11-29 2011-04-21 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2007123910A (ja) * 2000-11-29 2007-05-17 Semiconductor Energy Lab Co Ltd 薄膜トランジスタの作製方法
JP2002367905A (ja) * 2001-04-06 2002-12-20 Seiko Epson Corp 薄膜半導体装置の製造方法
KR100507553B1 (ko) * 2001-09-25 2005-08-09 샤프 가부시키가이샤 결정성 반도체막, 그의 제조방법, 반도체장치 및 그의제조방법
US7153359B2 (en) 2001-09-25 2006-12-26 Sharp Kabushiki Kaisha Crystalline semiconductor film and production method thereof, and semiconductor device and production method thereof
JP2004207691A (ja) * 2002-12-11 2004-07-22 Sharp Corp 半導体薄膜の製造方法、その製造方法により得られる半導体薄膜、その半導体薄膜を用いる半導体素子および半導体薄膜の製造装置
JP2005045209A (ja) * 2003-07-09 2005-02-17 Mitsubishi Electric Corp レーザアニール方法
JP2005175211A (ja) * 2003-12-11 2005-06-30 Sharp Corp 半導体膜の製造方法および製造装置
KR100682439B1 (ko) * 2004-01-23 2007-02-15 샤프 가부시키가이샤 반도체 박막의 제조 방법
JP2007095989A (ja) * 2005-09-29 2007-04-12 Dainippon Printing Co Ltd 薄膜トランジスタの製造方法
JP2011014841A (ja) * 2009-07-06 2011-01-20 Kaneka Corp 積層型光電変換装置の製造方法
US9236487B2 (en) 2011-08-30 2016-01-12 Joled Inc. Method of manufacturing substrate having thin film thereabove, method of manufacturing thin-film-device substrate, thin-film substrate, and thin-film-device substrate
WO2020158424A1 (ja) * 2019-01-31 2020-08-06 株式会社ブイ・テクノロジー レーザアニール方法、レーザアニール装置、および結晶化シリコン膜基板
JP2020123693A (ja) * 2019-01-31 2020-08-13 株式会社ブイ・テクノロジー レーザアニール方法、レーザアニール装置、および結晶化シリコン膜基板
CN113330538A (zh) * 2019-01-31 2021-08-31 株式会社V技术 激光退火方法、激光退火装置及晶化硅膜基板
JP7203417B2 (ja) 2019-01-31 2023-01-13 株式会社ブイ・テクノロジー レーザアニール方法、レーザアニール装置、およびｔｆｔ基板
US12148616B2 (en) 2019-01-31 2024-11-19 V Technology Co., Ltd. Laser annealing method, laser annealing device, and crystallized silicon film substrate

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