JP2000150517A5 - - Google Patents
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- Publication number
- JP2000150517A5 JP2000150517A5 JP1998324594A JP32459498A JP2000150517A5 JP 2000150517 A5 JP2000150517 A5 JP 2000150517A5 JP 1998324594 A JP1998324594 A JP 1998324594A JP 32459498 A JP32459498 A JP 32459498A JP 2000150517 A5 JP2000150517 A5 JP 2000150517A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- interlayer insulating
- film
- forming
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 14
- 230000004888 barrier function Effects 0.000 claims description 8
- 229910021332 silicide Inorganic materials 0.000 claims description 8
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 7
- 239000011229 interlayer Substances 0.000 claims 27
- 239000010410 layer Substances 0.000 claims 11
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 5
- 239000007789 gas Substances 0.000 claims 5
- 238000004519 manufacturing process Methods 0.000 claims 3
- 229910000077 silane Inorganic materials 0.000 claims 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
- 230000000149 penetrating effect Effects 0.000 claims 2
- 238000005498 polishing Methods 0.000 claims 2
- 239000000126 substance Substances 0.000 claims 2
- 238000001312 dry etching Methods 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 229910016344 CuSi Inorganic materials 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10324594A JP2000150517A (ja) | 1998-11-16 | 1998-11-16 | 半導体集積回路装置およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10324594A JP2000150517A (ja) | 1998-11-16 | 1998-11-16 | 半導体集積回路装置およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000150517A JP2000150517A (ja) | 2000-05-30 |
| JP2000150517A5 true JP2000150517A5 (https=) | 2005-03-17 |
Family
ID=18167568
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10324594A Pending JP2000150517A (ja) | 1998-11-16 | 1998-11-16 | 半導体集積回路装置およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000150517A (https=) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6251775B1 (en) | 1999-04-23 | 2001-06-26 | International Business Machines Corporation | Self-aligned copper silicide formation for improved adhesion/electromigration |
| JP2003045960A (ja) * | 2001-08-01 | 2003-02-14 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| JP4063619B2 (ja) | 2002-03-13 | 2008-03-19 | Ｎｅｃエレクトロニクス株式会社 | 半導体装置の製造方法 |
| US7687917B2 (en) | 2002-05-08 | 2010-03-30 | Nec Electronics Corporation | Single damascene structure semiconductor device having silicon-diffused metal wiring layer |
| JP2003347299A (ja) * | 2002-05-24 | 2003-12-05 | Renesas Technology Corp | 半導体集積回路装置の製造方法 |
| JP2004253780A (ja) * | 2003-01-31 | 2004-09-09 | Nec Electronics Corp | 半導体装置およびその製造方法 |
| JP2004253781A (ja) * | 2003-01-31 | 2004-09-09 | Nec Electronics Corp | 半導体装置およびその製造方法 |
| JP4963349B2 (ja) * | 2005-01-14 | 2012-06-27 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP5204370B2 (ja) * | 2005-03-17 | 2013-06-05 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
-
1998
- 1998-11-16 JP JP10324594A patent/JP2000150517A/ja active Pending
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