JP2000150517A - 半導体集積回路装置およびその製造方法 - Google Patents

半導体集積回路装置およびその製造方法

Info

Publication number
JP2000150517A
JP2000150517A JP10324594A JP32459498A JP2000150517A JP 2000150517 A JP2000150517 A JP 2000150517A JP 10324594 A JP10324594 A JP 10324594A JP 32459498 A JP32459498 A JP 32459498A JP 2000150517 A JP2000150517 A JP 2000150517A
Authority
JP
Japan
Prior art keywords
film
wiring
interlayer insulating
insulating film
barrier layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10324594A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000150517A5 (https=
Inventor
Toshinori Imai
俊則 今井
Junji Noguchi
純司 野口
Tadashi Ohashi
直史 大橋
Tatsuyuki Saito
達之 齋藤
Hide Yamaguchi
日出 山口
Takeshi Fujiwara
剛 藤原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10324594A priority Critical patent/JP2000150517A/ja
Publication of JP2000150517A publication Critical patent/JP2000150517A/ja
Publication of JP2000150517A5 publication Critical patent/JP2000150517A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP10324594A 1998-11-16 1998-11-16 半導体集積回路装置およびその製造方法 Pending JP2000150517A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10324594A JP2000150517A (ja) 1998-11-16 1998-11-16 半導体集積回路装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10324594A JP2000150517A (ja) 1998-11-16 1998-11-16 半導体集積回路装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2000150517A true JP2000150517A (ja) 2000-05-30
JP2000150517A5 JP2000150517A5 (https=) 2005-03-17

Family

ID=18167568

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10324594A Pending JP2000150517A (ja) 1998-11-16 1998-11-16 半導体集積回路装置およびその製造方法

Country Status (1)

Country Link
JP (1) JP2000150517A (https=)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003045960A (ja) * 2001-08-01 2003-02-14 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2003347299A (ja) * 2002-05-24 2003-12-05 Renesas Technology Corp 半導体集積回路装置の製造方法
JP3485256B2 (ja) 1999-04-23 2004-01-13 インターナショナル・ビジネス・マシーンズ・コーポレーション ケイ化物層を含む半導体構造とその製造方法
JP2004253780A (ja) * 2003-01-31 2004-09-09 Nec Electronics Corp 半導体装置およびその製造方法
JP2004253781A (ja) * 2003-01-31 2004-09-09 Nec Electronics Corp 半導体装置およびその製造方法
JP2006196744A (ja) * 2005-01-14 2006-07-27 Nec Electronics Corp 半導体装置および半導体装置の製造方法
JP2006261440A (ja) * 2005-03-17 2006-09-28 Nec Electronics Corp 半導体装置およびその製造方法
US7229921B2 (en) 2002-03-13 2007-06-12 Nec Electronics Corporation Semiconductor device and manufacturing method for the same
US7687917B2 (en) 2002-05-08 2010-03-30 Nec Electronics Corporation Single damascene structure semiconductor device having silicon-diffused metal wiring layer

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3485256B2 (ja) 1999-04-23 2004-01-13 インターナショナル・ビジネス・マシーンズ・コーポレーション ケイ化物層を含む半導体構造とその製造方法
US6818992B1 (en) 1999-04-23 2004-11-16 International Business Machines Corporation Self-aligned copper silicide formation for improved adhesion/electromigration
JP2003045960A (ja) * 2001-08-01 2003-02-14 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US7229921B2 (en) 2002-03-13 2007-06-12 Nec Electronics Corporation Semiconductor device and manufacturing method for the same
US7737555B2 (en) 2002-05-08 2010-06-15 Nec Electronics Corporation Semiconductor method having silicon-diffused metal wiring layer
US8642467B2 (en) 2002-05-08 2014-02-04 Renesas Electronics Corporation Semiconductor device having silicon-diffused metal wiring layer and its manufacturing method
US8115318B2 (en) 2002-05-08 2012-02-14 Renesas Electronics Corporation Semiconductor device having silicon-diffused metal wiring layer and its manufacturing method
US7842602B2 (en) 2002-05-08 2010-11-30 Renesas Electronics Corporation Semiconductor device having silicon-diffused metal wiring layer and its manufacturing method
US7687917B2 (en) 2002-05-08 2010-03-30 Nec Electronics Corporation Single damascene structure semiconductor device having silicon-diffused metal wiring layer
JP2003347299A (ja) * 2002-05-24 2003-12-05 Renesas Technology Corp 半導体集積回路装置の製造方法
JP2004253780A (ja) * 2003-01-31 2004-09-09 Nec Electronics Corp 半導体装置およびその製造方法
JP2004253781A (ja) * 2003-01-31 2004-09-09 Nec Electronics Corp 半導体装置およびその製造方法
JP2006196744A (ja) * 2005-01-14 2006-07-27 Nec Electronics Corp 半導体装置および半導体装置の製造方法
JP2006261440A (ja) * 2005-03-17 2006-09-28 Nec Electronics Corp 半導体装置およびその製造方法

Similar Documents

Publication Publication Date Title
JP4198906B2 (ja) 半導体装置および半導体装置の製造方法
KR101059968B1 (ko) 장벽층 접착이 개선된 배선들
CN101231969B (zh) 集成电路结构的形成方法
US7109127B2 (en) Manufacturing method of semiconductor device
JP4012381B2 (ja) 導電層の剥離を抑制できる半導体素子及びその製造方法
KR20040015789A (ko) 이온 주입에 의한 측벽 밀도의 국부적 증가
JP2003100746A (ja) 半導体装置の製造方法
JP2000150517A (ja) 半導体集積回路装置およびその製造方法
US8587128B2 (en) Damascene structure
KR100783868B1 (ko) 반도체장치의 제조방법 및 반도체장치
KR100914982B1 (ko) 반도체 소자의 금속배선 및 그 형성방법
JP2000150517A5 (https=)
JP2000174019A (ja) 半導体装置及びその製造方法
KR100552813B1 (ko) 반도체 소자의 금속 배선 형성 방법
JP4232215B2 (ja) 半導体装置の製造方法
US5930670A (en) Method of forming a tungsten plug of a semiconductor device
JP2006135363A (ja) 半導体装置および半導体装置の製造方法
KR20020056341A (ko) 반도체 소자의 층간 절연막 형성 방법
KR100935193B1 (ko) 반도체 소자의 금속배선 및 그의 형성방법
JP2001044201A (ja) 半導体集積回路装置の製造方法
KR100774642B1 (ko) 반도체 소자의 구리배선 형성방법
JP2002009146A (ja) 半導体集積回路装置の製造方法および半導体集積回路装置
KR100621228B1 (ko) 반도체 소자의 배선 및 배선연결부 제조방법
JP2000323569A (ja) 半導体集積回路装置およびその製造方法
JP2002176098A (ja) 多層配線構造を有する半導体装置の製造方法

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040423

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040423

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20040929

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20041005

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20050222