JP2000133792A5 - - Google Patents

Download PDF

Info

Publication number
JP2000133792A5
JP2000133792A5 JP1999276173A JP27617399A JP2000133792A5 JP 2000133792 A5 JP2000133792 A5 JP 2000133792A5 JP 1999276173 A JP1999276173 A JP 1999276173A JP 27617399 A JP27617399 A JP 27617399A JP 2000133792 A5 JP2000133792 A5 JP 2000133792A5
Authority
JP
Japan
Prior art keywords
layer
sensor according
interconnect structure
pixel
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1999276173A
Other languages
English (en)
Japanese (ja)
Other versions
JP4788932B2 (ja
JP2000133792A (ja
Filing date
Publication date
Priority claimed from US09/174,718 external-priority patent/US6018187A/en
Application filed filed Critical
Publication of JP2000133792A publication Critical patent/JP2000133792A/ja
Publication of JP2000133792A5 publication Critical patent/JP2000133792A5/ja
Application granted granted Critical
Publication of JP4788932B2 publication Critical patent/JP4788932B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP27617399A 1998-10-19 1999-09-29 相互接続構造を含む能動画素センサ Expired - Lifetime JP4788932B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US174,718 1998-10-19
US09/174,718 US6018187A (en) 1998-10-19 1998-10-19 Elevated pin diode active pixel sensor including a unique interconnection structure

Publications (3)

Publication Number Publication Date
JP2000133792A JP2000133792A (ja) 2000-05-12
JP2000133792A5 true JP2000133792A5 (enExample) 2007-01-25
JP4788932B2 JP4788932B2 (ja) 2011-10-05

Family

ID=22637230

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27617399A Expired - Lifetime JP4788932B2 (ja) 1998-10-19 1999-09-29 相互接続構造を含む能動画素センサ

Country Status (4)

Country Link
US (1) US6018187A (enExample)
EP (1) EP0996164B1 (enExample)
JP (1) JP4788932B2 (enExample)
DE (1) DE69932132T2 (enExample)

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7534254B1 (en) * 1988-06-13 2009-05-19 Warsaw Orthopedic, Inc. Threaded frusto-conical interbody spinal fusion implants
US6114739A (en) * 1998-10-19 2000-09-05 Agilent Technologies Elevated pin diode active pixel sensor which includes a patterned doped semiconductor electrode
US6545711B1 (en) * 1998-11-02 2003-04-08 Agilent Technologies, Inc. Photo diode pixel sensor array having a guard ring
US6384460B1 (en) * 1999-06-07 2002-05-07 Agilent Technologies, Inc. Self-aligned metal electrode structure for elevated sensors
US6215164B1 (en) * 1999-07-26 2001-04-10 Agilent Technologies, Inc. Elevated image sensor array which includes isolation between uniquely shaped image sensors
US6229191B1 (en) * 1999-11-19 2001-05-08 Agilent Technologies, Inc. Conductive guard rings for elevated active pixel sensors
US6396118B1 (en) * 2000-02-03 2002-05-28 Agilent Technologies, Inc. Conductive mesh bias connection for an array of elevated active pixel sensors
US20040113220A1 (en) * 2000-12-21 2004-06-17 Peter Rieve Optoelectronic component for conversion electromagnetic radiation into an intensity-dependent photocurrent
US7038242B2 (en) 2001-02-28 2006-05-02 Agilent Technologies, Inc. Amorphous semiconductor open base phototransistor array
US6649993B2 (en) * 2001-03-16 2003-11-18 Agilent Technologies, Inc. Simplified upper electrode contact structure for PIN diode active pixel sensor
US7382034B2 (en) * 2001-05-16 2008-06-03 Stmicroelectronics Nv Optoelectronic component having a conductive contact structure
US6759262B2 (en) 2001-12-18 2004-07-06 Agilent Technologies, Inc. Image sensor with pixel isolation system and manufacturing method therefor
US7196829B2 (en) * 2002-01-10 2007-03-27 Micron Technology Inc. Digital image system and method for combining sensing and image processing on sensor with two-color photo-detector
US6730914B2 (en) * 2002-02-05 2004-05-04 E-Phocus, Inc. Photoconductor-on-active-pixel (POAP) sensor utilizing equal-potential pixel electrodes
US6798033B2 (en) * 2002-08-27 2004-09-28 E-Phocus, Inc. Photoconductor-on-active-pixel (POAP) sensor utilizing a multi-layered radiation absorbing structure
US6791130B2 (en) * 2002-08-27 2004-09-14 E-Phocus, Inc. Photoconductor-on-active-pixel (POAP) sensor utilizing a multi-layered radiation absorbing structure
US7411233B2 (en) * 2002-08-27 2008-08-12 E-Phocus, Inc Photoconductor-on-active-pixel (POAP) sensor utilizing a multi-layered radiation absorbing structure
US6940061B2 (en) * 2002-02-27 2005-09-06 Agilent Technologies, Inc. Two-color photo-detector and methods for demosaicing a two-color photo-detector array
US7179654B2 (en) * 2002-03-18 2007-02-20 Agilent Technologies, Inc. Biochemical assay with programmable array detection
FR2841382B1 (fr) * 2002-06-25 2005-01-07 Commissariat Energie Atomique Imageur pour lumiere visible
WO2004001853A2 (fr) * 2002-06-25 2003-12-31 Commissariat A L'energie Atomique Imageur
FR2841383B1 (fr) * 2002-06-25 2005-01-07 Commissariat Energie Atomique Imageur pour ultraviolet
US20040085463A1 (en) * 2002-11-06 2004-05-06 Manish Sharma Imaging system with non-volatile memory
JP2004343031A (ja) * 2002-12-03 2004-12-02 Advanced Lcd Technologies Development Center Co Ltd 誘電体膜およびその形成方法ならびに誘電体膜を用いた半導体装置およびその製造方法
US7566964B2 (en) * 2003-04-10 2009-07-28 Agere Systems Inc. Aluminum pad power bus and signal routing for integrated circuit devices utilizing copper technology interconnect structures
US7067891B2 (en) * 2003-11-04 2006-06-27 Taiwan Semiconductor Manufacturing Co., Ltd. Sensor element having elevated diode with sidewall passivated bottom electrode
KR100539253B1 (ko) 2004-03-10 2005-12-27 삼성전자주식회사 폴리실리콘 콘택 스터드를 갖는 ｃｍｏｓ 이미지 디바이스
TWI324332B (en) * 2004-03-30 2010-05-01 Au Optronics Corp Display array and display panel
US7285796B2 (en) * 2004-06-02 2007-10-23 Micron Technology, Inc. Raised photodiode sensor to increase fill factor and quantum efficiency in scaled pixels
US7939022B2 (en) * 2004-08-05 2011-05-10 Avago Technologies General Ip (Singapore) Pte. Ltd. Integration of colorimetric transducers and detector
US7096716B2 (en) 2004-11-03 2006-08-29 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Integration of thermal regulation and electronic fluid sensing
US20060138312A1 (en) * 2004-12-22 2006-06-29 Butterworth Mark M Solid-state spectrophotomer
US20070262296A1 (en) * 2006-05-11 2007-11-15 Matthias Bauer Photodetectors employing germanium layers
US7777290B2 (en) * 2006-06-13 2010-08-17 Wisconsin Alumni Research Foundation PIN diodes for photodetection and high-speed, high-resolution image sensing
US7679157B2 (en) * 2006-08-21 2010-03-16 Powerchip Semiconductor Corp. Image sensor and fabrication method thereof
US7960218B2 (en) * 2006-09-08 2011-06-14 Wisconsin Alumni Research Foundation Method for fabricating high-speed thin-film transistors
US7482646B2 (en) * 2006-10-18 2009-01-27 Hejian Technology (Suzhou) Co., Ltd. Image sensor
CN100573850C (zh) * 2006-11-03 2009-12-23 力晶半导体股份有限公司 图像传感器结构及其制造方法
KR101186296B1 (ko) 2006-12-01 2012-09-27 삼성전자주식회사 포토 다이오드 및 이를 채용한 이미지센서
KR20080083971A (ko) * 2007-03-14 2008-09-19 동부일렉트로닉스 주식회사 이미지센서 및 그 제조방법
JP4309928B2 (ja) 2007-03-15 2009-08-05 アイシン精機株式会社 瞼検出装置、瞼検出方法、及び、プログラム
KR100894391B1 (ko) * 2007-06-12 2009-04-20 주식회사 동부하이텍 이미지 센서 및 그 제조방법
KR100922921B1 (ko) * 2007-12-28 2009-10-22 주식회사 동부하이텍 이미지센서 및 그 제조방법
US8228409B2 (en) * 2008-10-24 2012-07-24 Dongbu Hitek Co., Ltd. Image sensor and method for manufacturing the same
US8531565B2 (en) 2009-02-24 2013-09-10 Taiwan Semiconductor Manufacturing Company, Ltd. Front side implanted guard ring structure for backside illuminated image sensor
US9142586B2 (en) 2009-02-24 2015-09-22 Taiwan Semiconductor Manufacturing Company, Ltd. Pad design for backside illuminated image sensor
JP2011071482A (ja) * 2009-08-28 2011-04-07 Fujifilm Corp 固体撮像装置，固体撮像装置の製造方法，デジタルスチルカメラ，デジタルビデオカメラ，携帯電話，内視鏡
US20120217498A1 (en) * 2009-09-01 2012-08-30 Rohm Co., Ltd. Photoelectric converter and method for manufacturing the same
WO2014002367A1 (ja) 2012-06-25 2014-01-03 パナソニック株式会社 固体撮像装置
US10094988B2 (en) * 2012-08-31 2018-10-09 Micron Technology, Inc. Method of forming photonics structures
JP5728451B2 (ja) * 2012-09-19 2015-06-03 富士フイルム株式会社 有機固体撮像素子およびその製造方法
KR102282493B1 (ko) * 2014-08-12 2021-07-26 삼성전자주식회사 이미지 센서 및 이를 포함하는 전자 장치
JP2016096233A (ja) * 2014-11-14 2016-05-26 ソニー株式会社 固体撮像素子、製造方法、および電子装置
US10254417B2 (en) * 2015-11-19 2019-04-09 Shimadzu Corporation Semiconductor detector
WO2019131134A1 (ja) 2017-12-28 2019-07-04 ソニーセミコンダクタソリューションズ株式会社 受光素子および電子機器

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60171A (ja) * 1984-05-30 1985-01-05 Hitachi Ltd 固体撮像素子
JPS61296762A (ja) * 1985-06-26 1986-12-27 Toshiba Corp 固体撮像装置
JPS6218755A (ja) * 1985-07-18 1987-01-27 Toshiba Corp 固体撮像装置
JPH02128468A (ja) * 1988-11-08 1990-05-16 Fujitsu Ltd 固体撮像装置及びその製造方法
US5182624A (en) * 1990-08-08 1993-01-26 Minnesota Mining And Manufacturing Company Solid state electromagnetic radiation detector fet array
JPH07118527B2 (ja) * 1990-10-18 1995-12-18 富士ゼロックス株式会社 イメージセンサの製造方法
JP2765635B2 (ja) * 1991-01-11 1998-06-18 キヤノン株式会社 光電変換装置
JPH04261071A (ja) * 1991-01-11 1992-09-17 Canon Inc 光電変換装置
GB9202693D0 (en) * 1992-02-08 1992-03-25 Philips Electronics Uk Ltd A method of manufacturing a large area active matrix array
JPH06204450A (ja) * 1992-12-28 1994-07-22 Toshiba Corp 固体撮像装置
JPH07115184A (ja) * 1993-08-24 1995-05-02 Canon Inc 積層型固体撮像装置及びその製造方法
JP3579194B2 (ja) * 1996-09-17 2004-10-20 株式会社東芝 固体撮像装置の駆動方法

Similar Documents

Publication Publication Date Title
JP2000133792A5 (enExample)
EP0996164A3 (en) An elevated pin diode active pixel sensor including a unique interconnection structure
EP1050907A3 (en) Photosensor structure
TWI240436B (en) Image sensor with vertically integrated thin-film photodiodes and method of fabricating the same
JPH11125841A5 (ja) アクティブマトリクス型表示装置およびその作製方法
EP1102321A3 (en) Conductive guard rings for active pixel sensors
EP0908956A3 (en) Photoelectric conversion apparatus and image sensor
EP1045450A3 (en) Image sensor array device
JP2010161390A (ja) イメージセンサ
EP0749161A3 (en) Integrated thin-film solar battery and method of manufacturing the same
JP2001501039A (ja) イメージセンサ及びその製造
JP3694655B2 (ja) 光検出器のアレイを製造する方法
JPH1187683A5 (enExample)
US20050042794A1 (en) Optoelectronic component for converting electromagnetic radiation into an intensity-dependent photocurrent
CN104733488A (zh) 有机图像传感器及其形成方法
JPH10214955A (ja) 放射撮像装置用のコンタクト・パッド
JP3587131B2 (ja) フォトセンサアレイおよびその製造方法
EP0869547A3 (en) Semiconductor device and manufacture method thereof
KR950013197A (ko) 저저항 게이트전극을 갖는 고체 촬상소자 및 그 제조방법
JPS6149569A (ja) 固体撮像装置
JPH02128468A (ja) 固体撮像装置及びその製造方法
CN207966981U (zh) 背照式图像传感器
KR100209758B1 (ko) 고체 촬상 소자 및 그의 제조 방법
KR100287011B1 (ko) 광다이내믹레인지와고해상도를갖는고체촬상센서장치
US7282382B2 (en) Method for producing a photodiode contact for a TFA image sensor