DE69932132T2 - Aktiver Bildsensor mit einer erhöhten pin-Diode und einer besonderen Verbindungsstruktur - Google Patents
Aktiver Bildsensor mit einer erhöhten pin-Diode und einer besonderen Verbindungsstruktur Download PDFInfo
- Publication number
- DE69932132T2 DE69932132T2 DE69932132T DE69932132T DE69932132T2 DE 69932132 T2 DE69932132 T2 DE 69932132T2 DE 69932132 T DE69932132 T DE 69932132T DE 69932132 T DE69932132 T DE 69932132T DE 69932132 T2 DE69932132 T2 DE 69932132T2
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor layer
- pixel
- connection structure
- sensor according
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 71
- 239000000758 substrate Substances 0.000 claims description 38
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 26
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 21
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 12
- 229910052721 tungsten Inorganic materials 0.000 claims description 12
- 239000010937 tungsten Substances 0.000 claims description 12
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 103
- 239000004020 conductor Substances 0.000 description 23
- 238000000034 method Methods 0.000 description 15
- 239000007789 gas Substances 0.000 description 14
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 238000001444 catalytic combustion detection Methods 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000005546 reactive sputtering Methods 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- -1 transition metal nitrides Chemical class 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 239000003610 charcoal Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/026—Wafer-level processing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/93—Interconnections
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US174718 | 1998-10-19 | ||
| US09/174,718 US6018187A (en) | 1998-10-19 | 1998-10-19 | Elevated pin diode active pixel sensor including a unique interconnection structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69932132D1 DE69932132D1 (de) | 2006-08-10 |
| DE69932132T2 true DE69932132T2 (de) | 2007-01-04 |
Family
ID=22637230
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69932132T Expired - Lifetime DE69932132T2 (de) | 1998-10-19 | 1999-09-30 | Aktiver Bildsensor mit einer erhöhten pin-Diode und einer besonderen Verbindungsstruktur |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6018187A (enExample) |
| EP (1) | EP0996164B1 (enExample) |
| JP (1) | JP4788932B2 (enExample) |
| DE (1) | DE69932132T2 (enExample) |
Families Citing this family (55)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7534254B1 (en) * | 1988-06-13 | 2009-05-19 | Warsaw Orthopedic, Inc. | Threaded frusto-conical interbody spinal fusion implants |
| US6114739A (en) * | 1998-10-19 | 2000-09-05 | Agilent Technologies | Elevated pin diode active pixel sensor which includes a patterned doped semiconductor electrode |
| US6545711B1 (en) * | 1998-11-02 | 2003-04-08 | Agilent Technologies, Inc. | Photo diode pixel sensor array having a guard ring |
| US6384460B1 (en) * | 1999-06-07 | 2002-05-07 | Agilent Technologies, Inc. | Self-aligned metal electrode structure for elevated sensors |
| US6215164B1 (en) * | 1999-07-26 | 2001-04-10 | Agilent Technologies, Inc. | Elevated image sensor array which includes isolation between uniquely shaped image sensors |
| US6229191B1 (en) * | 1999-11-19 | 2001-05-08 | Agilent Technologies, Inc. | Conductive guard rings for elevated active pixel sensors |
| US6396118B1 (en) * | 2000-02-03 | 2002-05-28 | Agilent Technologies, Inc. | Conductive mesh bias connection for an array of elevated active pixel sensors |
| US20040113220A1 (en) * | 2000-12-21 | 2004-06-17 | Peter Rieve | Optoelectronic component for conversion electromagnetic radiation into an intensity-dependent photocurrent |
| US7038242B2 (en) | 2001-02-28 | 2006-05-02 | Agilent Technologies, Inc. | Amorphous semiconductor open base phototransistor array |
| US6649993B2 (en) * | 2001-03-16 | 2003-11-18 | Agilent Technologies, Inc. | Simplified upper electrode contact structure for PIN diode active pixel sensor |
| US7382034B2 (en) * | 2001-05-16 | 2008-06-03 | Stmicroelectronics Nv | Optoelectronic component having a conductive contact structure |
| US6759262B2 (en) | 2001-12-18 | 2004-07-06 | Agilent Technologies, Inc. | Image sensor with pixel isolation system and manufacturing method therefor |
| US7196829B2 (en) * | 2002-01-10 | 2007-03-27 | Micron Technology Inc. | Digital image system and method for combining sensing and image processing on sensor with two-color photo-detector |
| US6730914B2 (en) * | 2002-02-05 | 2004-05-04 | E-Phocus, Inc. | Photoconductor-on-active-pixel (POAP) sensor utilizing equal-potential pixel electrodes |
| US6798033B2 (en) * | 2002-08-27 | 2004-09-28 | E-Phocus, Inc. | Photoconductor-on-active-pixel (POAP) sensor utilizing a multi-layered radiation absorbing structure |
| US6791130B2 (en) * | 2002-08-27 | 2004-09-14 | E-Phocus, Inc. | Photoconductor-on-active-pixel (POAP) sensor utilizing a multi-layered radiation absorbing structure |
| US7411233B2 (en) * | 2002-08-27 | 2008-08-12 | E-Phocus, Inc | Photoconductor-on-active-pixel (POAP) sensor utilizing a multi-layered radiation absorbing structure |
| US6940061B2 (en) * | 2002-02-27 | 2005-09-06 | Agilent Technologies, Inc. | Two-color photo-detector and methods for demosaicing a two-color photo-detector array |
| US7179654B2 (en) * | 2002-03-18 | 2007-02-20 | Agilent Technologies, Inc. | Biochemical assay with programmable array detection |
| FR2841382B1 (fr) * | 2002-06-25 | 2005-01-07 | Commissariat Energie Atomique | Imageur pour lumiere visible |
| WO2004001853A2 (fr) * | 2002-06-25 | 2003-12-31 | Commissariat A L'energie Atomique | Imageur |
| FR2841383B1 (fr) * | 2002-06-25 | 2005-01-07 | Commissariat Energie Atomique | Imageur pour ultraviolet |
| US20040085463A1 (en) * | 2002-11-06 | 2004-05-06 | Manish Sharma | Imaging system with non-volatile memory |
| JP2004343031A (ja) * | 2002-12-03 | 2004-12-02 | Advanced Lcd Technologies Development Center Co Ltd | 誘電体膜およびその形成方法ならびに誘電体膜を用いた半導体装置およびその製造方法 |
| US7566964B2 (en) * | 2003-04-10 | 2009-07-28 | Agere Systems Inc. | Aluminum pad power bus and signal routing for integrated circuit devices utilizing copper technology interconnect structures |
| US7067891B2 (en) * | 2003-11-04 | 2006-06-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Sensor element having elevated diode with sidewall passivated bottom electrode |
| KR100539253B1 (ko) | 2004-03-10 | 2005-12-27 | 삼성전자주식회사 | 폴리실리콘 콘택 스터드를 갖는 ｃｍｏｓ 이미지 디바이스 |
| TWI324332B (en) * | 2004-03-30 | 2010-05-01 | Au Optronics Corp | Display array and display panel |
| US7285796B2 (en) * | 2004-06-02 | 2007-10-23 | Micron Technology, Inc. | Raised photodiode sensor to increase fill factor and quantum efficiency in scaled pixels |
| US7939022B2 (en) * | 2004-08-05 | 2011-05-10 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Integration of colorimetric transducers and detector |
| US7096716B2 (en) | 2004-11-03 | 2006-08-29 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Integration of thermal regulation and electronic fluid sensing |
| US20060138312A1 (en) * | 2004-12-22 | 2006-06-29 | Butterworth Mark M | Solid-state spectrophotomer |
| US20070262296A1 (en) * | 2006-05-11 | 2007-11-15 | Matthias Bauer | Photodetectors employing germanium layers |
| US7777290B2 (en) * | 2006-06-13 | 2010-08-17 | Wisconsin Alumni Research Foundation | PIN diodes for photodetection and high-speed, high-resolution image sensing |
| US7679157B2 (en) * | 2006-08-21 | 2010-03-16 | Powerchip Semiconductor Corp. | Image sensor and fabrication method thereof |
| US7960218B2 (en) * | 2006-09-08 | 2011-06-14 | Wisconsin Alumni Research Foundation | Method for fabricating high-speed thin-film transistors |
| US7482646B2 (en) * | 2006-10-18 | 2009-01-27 | Hejian Technology (Suzhou) Co., Ltd. | Image sensor |
| CN100573850C (zh) * | 2006-11-03 | 2009-12-23 | 力晶半导体股份有限公司 | 图像传感器结构及其制造方法 |
| KR101186296B1 (ko) | 2006-12-01 | 2012-09-27 | 삼성전자주식회사 | 포토 다이오드 및 이를 채용한 이미지센서 |
| KR20080083971A (ko) * | 2007-03-14 | 2008-09-19 | 동부일렉트로닉스 주식회사 | 이미지센서 및 그 제조방법 |
| JP4309928B2 (ja) | 2007-03-15 | 2009-08-05 | アイシン精機株式会社 | 瞼検出装置、瞼検出方法、及び、プログラム |
| KR100894391B1 (ko) * | 2007-06-12 | 2009-04-20 | 주식회사 동부하이텍 | 이미지 센서 및 그 제조방법 |
| KR100922921B1 (ko) * | 2007-12-28 | 2009-10-22 | 주식회사 동부하이텍 | 이미지센서 및 그 제조방법 |
| US8228409B2 (en) * | 2008-10-24 | 2012-07-24 | Dongbu Hitek Co., Ltd. | Image sensor and method for manufacturing the same |
| US8531565B2 (en) | 2009-02-24 | 2013-09-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Front side implanted guard ring structure for backside illuminated image sensor |
| US9142586B2 (en) | 2009-02-24 | 2015-09-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pad design for backside illuminated image sensor |
| JP2011071482A (ja) * | 2009-08-28 | 2011-04-07 | Fujifilm Corp | 固体撮像装置，固体撮像装置の製造方法，デジタルスチルカメラ，デジタルビデオカメラ，携帯電話，内視鏡 |
| US20120217498A1 (en) * | 2009-09-01 | 2012-08-30 | Rohm Co., Ltd. | Photoelectric converter and method for manufacturing the same |
| WO2014002367A1 (ja) | 2012-06-25 | 2014-01-03 | パナソニック株式会社 | 固体撮像装置 |
| US10094988B2 (en) * | 2012-08-31 | 2018-10-09 | Micron Technology, Inc. | Method of forming photonics structures |
| JP5728451B2 (ja) * | 2012-09-19 | 2015-06-03 | 富士フイルム株式会社 | 有機固体撮像素子およびその製造方法 |
| KR102282493B1 (ko) * | 2014-08-12 | 2021-07-26 | 삼성전자주식회사 | 이미지 센서 및 이를 포함하는 전자 장치 |
| JP2016096233A (ja) * | 2014-11-14 | 2016-05-26 | ソニー株式会社 | 固体撮像素子、製造方法、および電子装置 |
| US10254417B2 (en) * | 2015-11-19 | 2019-04-09 | Shimadzu Corporation | Semiconductor detector |
| WO2019131134A1 (ja) | 2017-12-28 | 2019-07-04 | ソニーセミコンダクタソリューションズ株式会社 | 受光素子および電子機器 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60171A (ja) * | 1984-05-30 | 1985-01-05 | Hitachi Ltd | 固体撮像素子 |
| JPS61296762A (ja) * | 1985-06-26 | 1986-12-27 | Toshiba Corp | 固体撮像装置 |
| JPS6218755A (ja) * | 1985-07-18 | 1987-01-27 | Toshiba Corp | 固体撮像装置 |
| JPH02128468A (ja) * | 1988-11-08 | 1990-05-16 | Fujitsu Ltd | 固体撮像装置及びその製造方法 |
| US5182624A (en) * | 1990-08-08 | 1993-01-26 | Minnesota Mining And Manufacturing Company | Solid state electromagnetic radiation detector fet array |
| JPH07118527B2 (ja) * | 1990-10-18 | 1995-12-18 | 富士ゼロックス株式会社 | イメージセンサの製造方法 |
| JP2765635B2 (ja) * | 1991-01-11 | 1998-06-18 | キヤノン株式会社 | 光電変換装置 |
| JPH04261071A (ja) * | 1991-01-11 | 1992-09-17 | Canon Inc | 光電変換装置 |
| GB9202693D0 (en) * | 1992-02-08 | 1992-03-25 | Philips Electronics Uk Ltd | A method of manufacturing a large area active matrix array |
| JPH06204450A (ja) * | 1992-12-28 | 1994-07-22 | Toshiba Corp | 固体撮像装置 |
| JPH07115184A (ja) * | 1993-08-24 | 1995-05-02 | Canon Inc | 積層型固体撮像装置及びその製造方法 |
| JP3579194B2 (ja) * | 1996-09-17 | 2004-10-20 | 株式会社東芝 | 固体撮像装置の駆動方法 |
-
1998
- 1998-10-19 US US09/174,718 patent/US6018187A/en not_active Expired - Lifetime
-
1999
- 1999-09-29 JP JP27617399A patent/JP4788932B2/ja not_active Expired - Lifetime
- 1999-09-30 EP EP99307737A patent/EP0996164B1/en not_active Expired - Lifetime
- 1999-09-30 DE DE69932132T patent/DE69932132T2/de not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0996164A2 (en) | 2000-04-26 |
| DE69932132D1 (de) | 2006-08-10 |
| EP0996164A3 (en) | 2000-05-24 |
| EP0996164B1 (en) | 2006-06-28 |
| US6018187A (en) | 2000-01-25 |
| JP4788932B2 (ja) | 2011-10-05 |
| JP2000133792A (ja) | 2000-05-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: MICRON TECHNOLOGY, INC., BOISE, ID., US |