CN100573850C - 图像传感器结构及其制造方法 - Google Patents
图像传感器结构及其制造方法 Download PDFInfo
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- CN100573850C CN100573850C CNB2006101700923A CN200610170092A CN100573850C CN 100573850 C CN100573850 C CN 100573850C CN B2006101700923 A CNB2006101700923 A CN B2006101700923A CN 200610170092 A CN200610170092 A CN 200610170092A CN 100573850 C CN100573850 C CN 100573850C
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Priority Applications (1)
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CNB2006101700923A CN100573850C (zh) | 2006-11-03 | 2006-12-18 | 图像传感器结构及其制造方法 |
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CN200610143331.6 | 2006-11-03 | ||
CN200610143331 | 2006-11-03 | ||
CNB2006101700923A CN100573850C (zh) | 2006-11-03 | 2006-12-18 | 图像传感器结构及其制造方法 |
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CN101174580A CN101174580A (zh) | 2008-05-07 |
CN100573850C true CN100573850C (zh) | 2009-12-23 |
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CNB2006101700923A Active CN100573850C (zh) | 2006-11-03 | 2006-12-18 | 图像传感器结构及其制造方法 |
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Families Citing this family (1)
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JP2012064709A (ja) * | 2010-09-15 | 2012-03-29 | Sony Corp | 固体撮像装置及び電子機器 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5235195A (en) * | 1990-08-08 | 1993-08-10 | Minnesota Mining And Manufacturing Company | Solid state electromagnetic radiation detector with planarization layer |
US6018187A (en) * | 1998-10-19 | 2000-01-25 | Hewlett-Packard Cmpany | Elevated pin diode active pixel sensor including a unique interconnection structure |
US6791130B2 (en) * | 2002-08-27 | 2004-09-14 | E-Phocus, Inc. | Photoconductor-on-active-pixel (POAP) sensor utilizing a multi-layered radiation absorbing structure |
US20060049439A1 (en) * | 2004-09-08 | 2006-03-09 | Samsung Electronics Co., Ltd | Image device and method of fabricating the same |
US20060118795A1 (en) * | 2004-07-06 | 2006-06-08 | Fuji Photo Film Co., Ltd. | Functional device and method for producing the same |
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2006
- 2006-12-18 CN CNB2006101700923A patent/CN100573850C/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5235195A (en) * | 1990-08-08 | 1993-08-10 | Minnesota Mining And Manufacturing Company | Solid state electromagnetic radiation detector with planarization layer |
US6018187A (en) * | 1998-10-19 | 2000-01-25 | Hewlett-Packard Cmpany | Elevated pin diode active pixel sensor including a unique interconnection structure |
US6791130B2 (en) * | 2002-08-27 | 2004-09-14 | E-Phocus, Inc. | Photoconductor-on-active-pixel (POAP) sensor utilizing a multi-layered radiation absorbing structure |
US20060118795A1 (en) * | 2004-07-06 | 2006-06-08 | Fuji Photo Film Co., Ltd. | Functional device and method for producing the same |
US20060049439A1 (en) * | 2004-09-08 | 2006-03-09 | Samsung Electronics Co., Ltd | Image device and method of fabricating the same |
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CN101174580A (zh) | 2008-05-07 |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: POWERCHIP TECHNOLOGY CO., LTD. Free format text: FORMER NAME: POWERCHIP SEMICONDUCTOR CORP. |
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CP01 | Change in the name or title of a patent holder |
Address after: Hsinchu Science Park, Taiwan, China Patentee after: Powerflash Technology Corporation Address before: Hsinchu Science Park, Taiwan, China Patentee before: Powerchip Semiconductor Corp. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20190626 Address after: Hsinchu Science Park, Taiwan, China Patentee after: Lijing Jicheng Electronic Manufacturing Co., Ltd. Address before: Hsinchu Science Park, Taiwan, China Patentee before: Powerflash Technology Corporation |