JP4788932B2 - 相互接続構造を含む能動画素センサ - Google Patents

相互接続構造を含む能動画素センサ Download PDF

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Publication number
JP4788932B2
JP4788932B2 JP27617399A JP27617399A JP4788932B2 JP 4788932 B2 JP4788932 B2 JP 4788932B2 JP 27617399 A JP27617399 A JP 27617399A JP 27617399 A JP27617399 A JP 27617399A JP 4788932 B2 JP4788932 B2 JP 4788932B2
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layer
pixel
substrate
interconnect structure
electrode
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JP2000133792A (ja
JP2000133792A5 (enExample
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ジェレミー・エー・シール
ミン・カオ
ディートリッチ・ダブリュー・ヴォック
フレデリック・エー・パーナー
シン・スン
シャウミン・マ
ゲイリー・ダブリュー・レイ
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マイクロン テクノロジー， インク．
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP27617399A 1998-10-19 1999-09-29 相互接続構造を含む能動画素センサ Expired - Lifetime JP4788932B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US174,718 1998-10-19
US09/174,718 US6018187A (en) 1998-10-19 1998-10-19 Elevated pin diode active pixel sensor including a unique interconnection structure

Publications (3)

Publication Number Publication Date
JP2000133792A JP2000133792A (ja) 2000-05-12
JP2000133792A5 JP2000133792A5 (enExample) 2007-01-25
JP4788932B2 true JP4788932B2 (ja) 2011-10-05

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JP27617399A Expired - Lifetime JP4788932B2 (ja) 1998-10-19 1999-09-29 相互接続構造を含む能動画素センサ

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US (1) US6018187A (enExample)
EP (1) EP0996164B1 (enExample)
JP (1) JP4788932B2 (enExample)
DE (1) DE69932132T2 (enExample)

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Also Published As

Publication number Publication date
DE69932132T2 (de) 2007-01-04
EP0996164A2 (en) 2000-04-26
DE69932132D1 (de) 2006-08-10
EP0996164A3 (en) 2000-05-24
EP0996164B1 (en) 2006-06-28
US6018187A (en) 2000-01-25
JP2000133792A (ja) 2000-05-12

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