JP2000091703A5 - - Google Patents

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Publication number
JP2000091703A5
JP2000091703A5 JP1998258014A JP25801498A JP2000091703A5 JP 2000091703 A5 JP2000091703 A5 JP 2000091703A5 JP 1998258014 A JP1998258014 A JP 1998258014A JP 25801498 A JP25801498 A JP 25801498A JP 2000091703 A5 JP2000091703 A5 JP 2000091703A5
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JP
Japan
Prior art keywords
light emitting
manufacturing
emitting device
semiconductor light
semiconductor
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JP1998258014A
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English (en)
Japanese (ja)
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JP2000091703A (ja
JP4292600B2 (ja
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Priority to JP25801498A priority Critical patent/JP4292600B2/ja
Priority claimed from JP25801498A external-priority patent/JP4292600B2/ja
Publication of JP2000091703A publication Critical patent/JP2000091703A/ja
Publication of JP2000091703A5 publication Critical patent/JP2000091703A5/ja
Application granted granted Critical
Publication of JP4292600B2 publication Critical patent/JP4292600B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP25801498A 1998-09-11 1998-09-11 ＧａＮ系半導体発光素子およびその製造方法 Expired - Fee Related JP4292600B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25801498A JP4292600B2 (ja) 1998-09-11 1998-09-11 ＧａＮ系半導体発光素子およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25801498A JP4292600B2 (ja) 1998-09-11 1998-09-11 ＧａＮ系半導体発光素子およびその製造方法

Publications (3)

Publication Number Publication Date
JP2000091703A JP2000091703A (ja) 2000-03-31
JP2000091703A5 true JP2000091703A5 (enrdf_load_stackoverflow) 2005-10-20
JP4292600B2 JP4292600B2 (ja) 2009-07-08

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Family Applications (1)

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JP25801498A Expired - Fee Related JP4292600B2 (ja) 1998-09-11 1998-09-11 ＧａＮ系半導体発光素子およびその製造方法

Country Status (1)

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JP (1) JP4292600B2 (enrdf_load_stackoverflow)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001339102A (ja) * 2000-05-29 2001-12-07 Toyota Central Res & Dev Lab Inc 窒化物系化合物半導体発光素子
DE10055710A1 (de) * 2000-11-10 2002-05-23 Horst P Strunk Herstellungsverfahren für ein optoelektronisches Halbleiterbauelement auf der Basis von seltenerddotiertem, amorphem III-N-Halbleitermaterial
JP4063520B2 (ja) 2000-11-30 2008-03-19 日本碍子株式会社 半導体発光素子
JP3872327B2 (ja) 2000-12-04 2007-01-24 日本碍子株式会社 半導体発光素子
JP3888668B2 (ja) 2000-12-28 2007-03-07 日本碍子株式会社 半導体発光素子
JP2002208730A (ja) * 2001-01-09 2002-07-26 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
KR20010044594A (ko) * 2001-03-09 2001-06-05 김상식 광통신용 희토류 반도체 소자
JP2002289927A (ja) * 2001-03-27 2002-10-04 Ngk Insulators Ltd 発光素子
JP3791765B2 (ja) * 2001-06-08 2006-06-28 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子
US7569863B2 (en) * 2004-02-19 2009-08-04 Panasonic Corporation Semiconductor light emitting device
JP2005268770A (ja) * 2004-02-19 2005-09-29 Matsushita Electric Ind Co Ltd 白色発光素子及び白色光源
JP2005268775A (ja) * 2004-02-19 2005-09-29 Matsushita Electric Ind Co Ltd 半導体発光素子及びその製造方法
US20090261364A1 (en) * 2004-08-31 2009-10-22 Kyota Ueda Fluorescent substance
FR2904730A1 (fr) * 2006-10-04 2008-02-08 Commissariat Energie Atomique Procede pour la realisation de diodes electroluminescentes a partir de semi-conducteurs nitrures.
WO2008144337A1 (en) * 2007-05-16 2008-11-27 Osram Sylvania Inc. Light emitting diode based on multiple double-heterostructures (quantum wells) with rare earth doped active regions
JP5388041B2 (ja) * 2009-05-07 2014-01-15 国立大学法人大阪大学 赤色発光半導体素子および赤色発光半導体素子の製造方法
JP5943407B2 (ja) * 2011-03-07 2016-07-05 国立大学法人豊橋技術科学大学 窒化物半導体発光素子及びその製造方法
US9455376B2 (en) 2012-08-23 2016-09-27 Osaka University Substrate for nitride semiconductor device and production method thereof, and red light emitting semiconductor device and production method thereof
FR3119709B1 (fr) * 2021-02-09 2023-10-20 Commissariat Energie Atomique Diode electroluminescente comprenant des regions emissives incluant des ions de terres rares
WO2022181432A1 (ja) * 2021-02-25 2022-09-01 国立大学法人大阪大学 希土類添加窒化物半導体素子とその製造方法、半導体ｌｅｄ、半導体レーザー
CN116705947B (zh) * 2023-07-27 2023-10-17 江西兆驰半导体有限公司 基于硅衬底的led外延片及其制备方法、led

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