FR3119709B1 - Diode electroluminescente comprenant des regions emissives incluant des ions de terres rares - Google Patents

Diode electroluminescente comprenant des regions emissives incluant des ions de terres rares Download PDF

Info

Publication number
FR3119709B1
FR3119709B1 FR2101228A FR2101228A FR3119709B1 FR 3119709 B1 FR3119709 B1 FR 3119709B1 FR 2101228 A FR2101228 A FR 2101228A FR 2101228 A FR2101228 A FR 2101228A FR 3119709 B1 FR3119709 B1 FR 3119709B1
Authority
FR
France
Prior art keywords
rare earth
earth ions
light
emitting diode
regions including
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR2101228A
Other languages
English (en)
Other versions
FR3119709A1 (fr
Inventor
Bruno Daudin
Gwénolé Jacopin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Centre National de la Recherche Scientifique CNRS
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS, Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Centre National de la Recherche Scientifique CNRS
Priority to FR2101228A priority Critical patent/FR3119709B1/fr
Priority to US18/264,606 priority patent/US20240304758A1/en
Priority to EP22706081.1A priority patent/EP4292138A1/fr
Priority to JP2023547858A priority patent/JP2024507745A/ja
Priority to PCT/FR2022/050200 priority patent/WO2022171948A1/fr
Publication of FR3119709A1 publication Critical patent/FR3119709A1/fr
Application granted granted Critical
Publication of FR3119709B1 publication Critical patent/FR3119709B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26Materials of the light emitting region
    • H01L33/30Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26Materials of the light emitting region
    • H01L33/30Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H01L33/325Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004Devices characterised by their operation
    • H01L33/0008Devices characterised by their operation having p-n or hi-lo junctions
    • H01L33/0012Devices characterised by their operation having p-n or hi-lo junctions p-i-n devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • H01L33/0062Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/025Physical imperfections, e.g. particular concentration or distribution of impurities
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

Procédé de réalisation d’un dispositif d’affichage (100) comprenant plusieurs pixels (101), la réalisation de chaque pixel comportant : - réalisation d’un empilement (102) formant des jonctions p-i-n de semi-conducteurs correspondant à des composés comprenant des atomes d’azote et d’aluminium et/ou de gallium et/ou d’indium ; - implantations de premiers, deuxièmes et troisièmes ions de terres rares respectivement dans des première, deuxième et troisième parties de la portion nid, à travers des masques (114) comprenant des première, deuxième et troisième ouvertures (116) disposées respectivement en regard de première, deuxième et troisième régions (118, 120, 122) de l’empilement formant respectivement des première, deuxième et troisième régions d’émission lumineuse. Figure pour l’abrégé : figure 4.
FR2101228A 2021-02-09 2021-02-09 Diode electroluminescente comprenant des regions emissives incluant des ions de terres rares Active FR3119709B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR2101228A FR3119709B1 (fr) 2021-02-09 2021-02-09 Diode electroluminescente comprenant des regions emissives incluant des ions de terres rares
US18/264,606 US20240304758A1 (en) 2021-02-09 2022-02-02 Light-emitting diode with emissive regions including rare earth ions
EP22706081.1A EP4292138A1 (fr) 2021-02-09 2022-02-02 Diode électroluminescente comprenant des régions émissives incluant des ions de terres rares
JP2023547858A JP2024507745A (ja) 2021-02-09 2022-02-02 希土類イオンを含む発光領域を有する発光ダイオード
PCT/FR2022/050200 WO2022171948A1 (fr) 2021-02-09 2022-02-02 Diode électroluminescente comprenant des régions émissives incluant des ions de terres rares

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2101228 2021-02-09
FR2101228A FR3119709B1 (fr) 2021-02-09 2021-02-09 Diode electroluminescente comprenant des regions emissives incluant des ions de terres rares

Publications (2)

Publication Number Publication Date
FR3119709A1 FR3119709A1 (fr) 2022-08-12
FR3119709B1 true FR3119709B1 (fr) 2023-10-20

Family

ID=75953978

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2101228A Active FR3119709B1 (fr) 2021-02-09 2021-02-09 Diode electroluminescente comprenant des regions emissives incluant des ions de terres rares

Country Status (5)

Country Link
US (1) US20240304758A1 (fr)
EP (1) EP4292138A1 (fr)
JP (1) JP2024507745A (fr)
FR (1) FR3119709B1 (fr)
WO (1) WO2022171948A1 (fr)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2904730A1 (fr) * 2006-10-04 2008-02-08 Commissariat Energie Atomique Procede pour la realisation de diodes electroluminescentes a partir de semi-conducteurs nitrures.
WO2008144337A1 (fr) * 2007-05-16 2008-11-27 Osram Sylvania Inc. Diode électroluminescente basée sur de multiples hétérostructures doubles (puits quantiques) avec des zones actives dopées avec des terres rares
JP2009212308A (ja) * 2008-03-04 2009-09-17 Sumitomo Electric Ind Ltd 発光ダイオード
KR102591388B1 (ko) * 2016-01-18 2023-10-19 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치
KR102524805B1 (ko) * 2016-02-12 2023-04-25 삼성전자주식회사 광원 모듈, 디스플레이 패널 및 이를 구비한 디스플레이 장치

Also Published As

Publication number Publication date
US20240304758A1 (en) 2024-09-12
JP2024507745A (ja) 2024-02-21
EP4292138A1 (fr) 2023-12-20
FR3119709A1 (fr) 2022-08-12
WO2022171948A1 (fr) 2022-08-18

Similar Documents

Publication Publication Date Title
US20210359246A1 (en) Oled display panel and manufacturing method thereof
US20190347979A1 (en) Micro light-emitting diode displays and pixel structures
US11063244B2 (en) Electroluminescent display device
CN106449659B (zh) 阵列基板及其制造方法、显示器
EP3214651B1 (fr) Substrat d'affichage, son dispositif d'affichage, et son procédé de fabrication
US5952680A (en) Monolithic array of light emitting diodes for the generation of light at multiple wavelengths and its use for multicolor display applications
CN104835831B (zh) 有机发光显示面板及其制造方法
WO2019205468A1 (fr) Structure de pixel oled et panneau d'affichage à oled
Saul et al. GaP red electroluminescent diodes with an external quantum efficiency of 7%
US10170526B1 (en) Organic light emitting diode display panel and method for manufacturing same
KR101098343B1 (ko) 전계발광표시장치, 색필터 패널 및 이의 제조 방법
US20080204366A1 (en) Broad color gamut display
CN109103236A (zh) 一种有机发光显示基板、显示装置及其制作方法
US11839093B2 (en) Image rendering in organic light emitting diode (OLED) displays, apparatuses, systems, and methods
US20220102432A1 (en) Display substrate, manufacturing method thereof, and display panel
CN107039465A (zh) 一种阵列基板及制备方法、显示面板和显示装置
US20090261722A1 (en) Organic light emitting diode display device
CN110265423A (zh) 一种柔性显示基板、柔性显示面板、柔性显示装置
KR20200007970A (ko) 크로마 보상 방법 및 장치, 디바이스, 디스플레이 장치 및 저장 매체
CN109636767A (zh) 多曝光图像融合方法
CN101483187A (zh) 电光学装置及电子设备
CN108682324A (zh) 无机发光二极管显示面板和显示装置
WO2022007494A1 (fr) Panneau d'affichage, son procédé de fabrication et appareil d'affichage
FR3119709B1 (fr) Diode electroluminescente comprenant des regions emissives incluant des ions de terres rares
US10403686B2 (en) Color film substrate and display device

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 2

PLSC Publication of the preliminary search report

Effective date: 20220812

PLFP Fee payment

Year of fee payment: 3

PLFP Fee payment

Year of fee payment: 4