FR3119709B1 - Diode electroluminescente comprenant des regions emissives incluant des ions de terres rares - Google Patents

Diode electroluminescente comprenant des regions emissives incluant des ions de terres rares Download PDF

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Publication number
FR3119709B1
FR3119709B1 FR2101228A FR2101228A FR3119709B1 FR 3119709 B1 FR3119709 B1 FR 3119709B1 FR 2101228 A FR2101228 A FR 2101228A FR 2101228 A FR2101228 A FR 2101228A FR 3119709 B1 FR3119709 B1 FR 3119709B1
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FR
France
Prior art keywords
rare earth
earth ions
light
emitting diode
regions including
Prior art date
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Active
Application number
FR2101228A
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English (en)
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FR3119709A1 (fr
Inventor
Bruno Daudin
Gwénolé Jacopin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Centre National de la Recherche Scientifique CNRS
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Centre National de la Recherche Scientifique CNRS, Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Centre National de la Recherche Scientifique CNRS
Priority to FR2101228A priority Critical patent/FR3119709B1/fr
Priority to US18/264,606 priority patent/US20240304758A1/en
Priority to EP22706081.1A priority patent/EP4292138A1/fr
Priority to JP2023547858A priority patent/JP2024507745A/ja
Priority to PCT/FR2022/050200 priority patent/WO2022171948A1/fr
Publication of FR3119709A1 publication Critical patent/FR3119709A1/fr
Application granted granted Critical
Publication of FR3119709B1 publication Critical patent/FR3119709B1/fr
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
    • H01L33/0012—Devices characterised by their operation having p-n or hi-lo junctions p-i-n devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

Procédé de réalisation d’un dispositif d’affichage (100) comprenant plusieurs pixels (101), la réalisation de chaque pixel comportant : - réalisation d’un empilement (102) formant des jonctions p-i-n de semi-conducteurs correspondant à des composés comprenant des atomes d’azote et d’aluminium et/ou de gallium et/ou d’indium ; - implantations de premiers, deuxièmes et troisièmes ions de terres rares respectivement dans des première, deuxième et troisième parties de la portion nid, à travers des masques (114) comprenant des première, deuxième et troisième ouvertures (116) disposées respectivement en regard de première, deuxième et troisième régions (118, 120, 122) de l’empilement formant respectivement des première, deuxième et troisième régions d’émission lumineuse. Figure pour l’abrégé : figure 4.
FR2101228A 2021-02-09 2021-02-09 Diode electroluminescente comprenant des regions emissives incluant des ions de terres rares Active FR3119709B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR2101228A FR3119709B1 (fr) 2021-02-09 2021-02-09 Diode electroluminescente comprenant des regions emissives incluant des ions de terres rares
US18/264,606 US20240304758A1 (en) 2021-02-09 2022-02-02 Light-emitting diode with emissive regions including rare earth ions
EP22706081.1A EP4292138A1 (fr) 2021-02-09 2022-02-02 Diode électroluminescente comprenant des régions émissives incluant des ions de terres rares
JP2023547858A JP2024507745A (ja) 2021-02-09 2022-02-02 希土類イオンを含む発光領域を有する発光ダイオード
PCT/FR2022/050200 WO2022171948A1 (fr) 2021-02-09 2022-02-02 Diode électroluminescente comprenant des régions émissives incluant des ions de terres rares

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2101228 2021-02-09
FR2101228A FR3119709B1 (fr) 2021-02-09 2021-02-09 Diode electroluminescente comprenant des regions emissives incluant des ions de terres rares

Publications (2)

Publication Number Publication Date
FR3119709A1 FR3119709A1 (fr) 2022-08-12
FR3119709B1 true FR3119709B1 (fr) 2023-10-20

Family

ID=75953978

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2101228A Active FR3119709B1 (fr) 2021-02-09 2021-02-09 Diode electroluminescente comprenant des regions emissives incluant des ions de terres rares

Country Status (5)

Country Link
US (1) US20240304758A1 (fr)
EP (1) EP4292138A1 (fr)
JP (1) JP2024507745A (fr)
FR (1) FR3119709B1 (fr)
WO (1) WO2022171948A1 (fr)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2904730A1 (fr) * 2006-10-04 2008-02-08 Commissariat Energie Atomique Procede pour la realisation de diodes electroluminescentes a partir de semi-conducteurs nitrures.
WO2008144337A1 (fr) * 2007-05-16 2008-11-27 Osram Sylvania Inc. Diode électroluminescente basée sur de multiples hétérostructures doubles (puits quantiques) avec des zones actives dopées avec des terres rares
JP2009212308A (ja) * 2008-03-04 2009-09-17 Sumitomo Electric Ind Ltd 発光ダイオード
KR102591388B1 (ko) * 2016-01-18 2023-10-19 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치
KR102524805B1 (ko) * 2016-02-12 2023-04-25 삼성전자주식회사 광원 모듈, 디스플레이 패널 및 이를 구비한 디스플레이 장치

Also Published As

Publication number Publication date
US20240304758A1 (en) 2024-09-12
JP2024507745A (ja) 2024-02-21
EP4292138A1 (fr) 2023-12-20
FR3119709A1 (fr) 2022-08-12
WO2022171948A1 (fr) 2022-08-18

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