WO2006009372A1 - Method of controlling the conductivity of n-type nitride semiconductor layer - Google Patents

Method of controlling the conductivity of n-type nitride semiconductor layer Download PDF

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Publication number
WO2006009372A1
WO2006009372A1 PCT/KR2005/002287 KR2005002287W WO2006009372A1 WO 2006009372 A1 WO2006009372 A1 WO 2006009372A1 KR 2005002287 W KR2005002287 W KR 2005002287W WO 2006009372 A1 WO2006009372 A1 WO 2006009372A1
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WIPO (PCT)
Prior art keywords
layer
conductivity
type nitride
nitride layer
type
Prior art date
Application number
PCT/KR2005/002287
Other languages
French (fr)
Inventor
Tae Kyung Yoo
Soo Kun Jeon
Original Assignee
Epivalley Co., Ltd.
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Filing date
Publication date
Application filed by Epivalley Co., Ltd. filed Critical Epivalley Co., Ltd.
Publication of WO2006009372A1 publication Critical patent/WO2006009372A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Definitions

  • the present invention relates to a method of controlling the conductivity of an n- type semiconductor layer which is indispensable in manufacturing a nitride light- emitting device.
  • US PAT No. 6,472,689 discloses a GaN-based semiconductor light-emitting device comprising an n-type Al(x)Ga(l-x)N (O ⁇ x ⁇ l) semiconductor layer, in which the n-type Al(x)Ga(l-x)N (O ⁇ x ⁇ l) semiconductor layer has a con ⁇ ductivity increasing in linear proportion to a mixing ratio of a silicon-containing gas and other source material gases.
  • the present invention has been made to solve the above-mentioned problem occurring in the prior art, and it is an object of the present invention to provide a high quality n-type nitride layer capable of controlling conductivity by a specific arrangement of an undoped nitride layer and a doped semiconductor layer.
  • a method of controlling the conductivity of an n-type nitride layer of a GaN- based semiconductor light-emitting device in which the n-type nitride layer is formed by alternately depositing an n-type doped In(x)Ga(l-x)N (0 ⁇ x ⁇ l) layer and an undoped GaN layer and the conductivity of the n-type nitride layer is controlled by adjusting the ratios in concentration and thickness between the n-type doped In(x)Ga(l-x)N (0 ⁇ x ⁇ l) layer and the undoped GaN layer.
  • the n-type doped In(x)Ga(l-x)N (0 ⁇ x ⁇ l) layer has preferably an electron concentration of l ⁇ "/cm 3 to 10 21 /cm 3 .
  • the n-type doped In(x)Ga(l-x)N (0 ⁇ x ⁇ l) layer has preferably a thickness of lnm to 20nm.
  • the undoped GaN layer has preferably a base concentration of 10 /cm to 10 /cm .
  • the undoped GaN layer has preferably a thickness of lnm to 20nm.
  • a pair of the In(x)Ga(l-x)N (0 ⁇ x ⁇ l) layer and the undoped GaN layer has preferably a thickness of 2nm to 40nm.
  • the n-type nitride layer has preferably a total thickness of 20nm to 5um.
  • the n-type dopant is preferably at least one selected from Si, In and Sn.
  • the present invention provides a method of controlling the conductivity of an n-type nitride layer of a GaN-based semiconductor light-emitting device, in which the n-type nitride layer is formed by repeatedly depositing an undoped GaN layer delta- doped with an n-type dopant and the conductivity of the n-type nitride layer is controlled by adjusting the concentration and time of the delta doping and the thickness of the undoped GaN.
  • the doping time is preferably within a range from 0.1 sec to 120 sec.
  • the undoped GaN layer has preferably a base concentration of from 10 /cm
  • the n-type nitride layer has preferably a total thickness of 20nm to 5um.
  • the n-type dopant is preferably at least one selected from Si, In and Sn.
  • the present invention is directed to a method of forming an n-type nitride layer having a desired conductivity by adjusting the thickness ratio of the doped n-type nitride layer and the undoped nitride layer, or repeatedly performing delta- doping with an n-type dopant between undoped nitride layers, whereby the n-type nitride layer can supply electrons and the undoped nitride layer can recover the layer quality.
  • the present invention can provide a high quality and high conductivity n-type nitride layer and thereby, a high efficiency and high re ⁇ liability nitride optoelectronic device.
  • FIG. 1 is a view for explanation of US PAT NO. 6,472,689 as a prior art
  • FIG. 2 is a view for explanation of an embodiment according to the present invention.
  • FIG. 3 is a view for explanation of another embodiment according to the present invention. Mode for the Invention
  • a buffer layer 20 is grown on a substrate 10 and an n-type nitride layer 40 is grown on a undoped GaN layer 30.
  • the n-type nitride layer 40 has the following construction.
  • An n-type doped In(x)Ga(l-x)N (0 ⁇ x ⁇ l) layer 41 and an undoped GaN layer 42 are alternately grown to form a cycle.
  • the average conductivity of the cycle is controlled by adjusting the concentration and thickness of the n-type doped In(x)Ga(l-x)N (0 ⁇ x ⁇ l) layer 41 and the thickness of the undoped GaN layer 42.
  • the number of the cycle is adjusted to determine the total thickness of the n-type semi ⁇ conductor layer.
  • the n-type doped In(x)Ga(l-x)N (0 ⁇ x ⁇ l) layer 41 is grown at 800 to 950°C and the undoped GaN layer 42 is grown at 950 to 1100°C.
  • the n-type doped In(x)Ga(l-x)N (0 ⁇ x ⁇ l) layer 41 serves to supply electrons to the undoped GaN layer 42 and the undoped GaN layer 42 serves to recover the deteriorated layer quality of the highly doped In(x)Ga(l-x)N (0 ⁇ x ⁇ l) layer 41.
  • a buffer layer 20 is grown on a substrate 10 and an n-type nitride layer 40 is grown on a undoped GaN layer 30.
  • the n-type nitride layer 40 has the following construction. A delta-doping with an n-type dopant 43 is performed between two undoped GaN layers 42a and 42a to form a cycle. The average con ⁇ ductivity of the cycle is controlled by adjusting the concentration and time of the delta doping with the n-type dopant 43 and the thickness of the undoped GaN 42a. The number of the cycle is adjusted to determine the total thickness of the n-type semi ⁇ conductor layer 40.
  • the undoped GaN layer 42a gallium containing gas is cut off.
  • the n-type dopant is introduced to the reactor, and then the undoped GaN layer 42a is grown thereon.
  • the n-type dopant 43 inserted between the undoped GaN layers 42a and 42a functions to supply electrons, thereby forming an n-type conductive layer.
  • the substrate 10 may be formed of SiC or sapphire, preferably a hetero-substrate of sapphire, though a homo-substrate may be used.
  • the growth of the buffer layer 20 and the undoped GaN 30 is well described in
  • the Al(x)Ga(l-x)N buffer layer is grown at 200 to 900°C and the Al(x)Ga(l-x)N layer is grown at 900 to
  • US PAT No. 4,855,249 discloses a method of growing a buffer layer of

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Abstract

The present invention relates to a method of controlling the conductivity of an n-type semiconductor layer which is indispensable in manufacturing a nitride light-emitting device, wherein the n-type nitride layer is formed by alternately depositing an n-type doped In(x)Ga(l-x)N (0<x<1) layer and an undoped GaN layer and the conductivity of the n-type nitride layer is controlled by adjusting the ratios in concentration and thickness between the n-type doped In(x)Ga(l-x)N (0<x<l) layer and the undoped GaN layer.

Description

Description
METHOD OF CONTROLLING THE CONDUCTIVITY OF N- TYPE NITRIDE SEMICONDUCTOR LAYER
Technical Field
[1] The present invention relates to a method of controlling the conductivity of an n- type semiconductor layer which is indispensable in manufacturing a nitride light- emitting device. Background Art
[2] US PAT No. 6,472,689, as shown in Fig. 1, discloses a GaN-based semiconductor light-emitting device comprising an n-type Al(x)Ga(l-x)N (O≤x≤l) semiconductor layer, in which the n-type Al(x)Ga(l-x)N (O≤x≤l) semiconductor layer has a con¬ ductivity increasing in linear proportion to a mixing ratio of a silicon-containing gas and other source material gases.
[3] However, in the GaN-based semiconductor light-emitting device, a large amount of n-type impurities should be added to grow a high concentration n-type nitride layer for forming a route of current applied into the device, which makes it difficult to produce a high quality nitride layer. Disclosure of Invention Technical Problem
[4] Accordingly, the present invention has been made to solve the above-mentioned problem occurring in the prior art, and it is an object of the present invention to provide a high quality n-type nitride layer capable of controlling conductivity by a specific arrangement of an undoped nitride layer and a doped semiconductor layer. Technical Solution
[5] To accomplish the above object, according to the present invention, there is provided a method of controlling the conductivity of an n-type nitride layer of a GaN- based semiconductor light-emitting device, in which the n-type nitride layer is formed by alternately depositing an n-type doped In(x)Ga(l-x)N (0≤x<l) layer and an undoped GaN layer and the conductivity of the n-type nitride layer is controlled by adjusting the ratios in concentration and thickness between the n-type doped In(x)Ga(l-x)N (0≤x<l) layer and the undoped GaN layer.
[6] Here, the n-type doped In(x)Ga(l-x)N (0≤x<l) layer has preferably an electron concentration of lθ"/cm3 to 1021/cm3.
[7] Also, the n-type doped In(x)Ga(l-x)N (0≤x<l) layer has preferably a thickness of lnm to 20nm.
[8] Also, the undoped GaN layer has preferably a base concentration of 10 /cm to 10 /cm .
[9] Also, the undoped GaN layer has preferably a thickness of lnm to 20nm.
[10] Also, a pair of the In(x)Ga(l-x)N (0<x<l) layer and the undoped GaN layer has preferably a thickness of 2nm to 40nm.
[11] Also, the n-type nitride layer has preferably a total thickness of 20nm to 5um.
[12] Also, the n-type dopant is preferably at least one selected from Si, In and Sn.
[13] Also, the present invention provides a method of controlling the conductivity of an n-type nitride layer of a GaN-based semiconductor light-emitting device, in which the n-type nitride layer is formed by repeatedly depositing an undoped GaN layer delta- doped with an n-type dopant and the conductivity of the n-type nitride layer is controlled by adjusting the concentration and time of the delta doping and the thickness of the undoped GaN.
[14] Here, in the delta-doping with an n-type dopant, the electron concentration is
17 1^ 00 1^ preferably within a range from 10 /cm to 10 /cm . [15] Also, in the delta-doping with an n-type dopant, the doping time is preferably within a range from 0.1 sec to 120 sec. [16] Also, the undoped GaN layer has preferably a base concentration of from 10 /cm
, 1 r,l7, 3 to 10 /cm .
[17] Also, the n-type nitride layer has preferably a total thickness of 20nm to 5um.
[18] Also, the n-type dopant is preferably at least one selected from Si, In and Sn.
Advantageous Effects
[19] Unlike the previously published method of forming a n-type nitride layer (to provide a desired conductivity by adjusting the mixing ratio of an n-type dopant and source materials), the present invention is directed to a method of forming an n-type nitride layer having a desired conductivity by adjusting the thickness ratio of the doped n-type nitride layer and the undoped nitride layer, or repeatedly performing delta- doping with an n-type dopant between undoped nitride layers, whereby the n-type nitride layer can supply electrons and the undoped nitride layer can recover the layer quality. By the foregoing construction, the present invention can provide a high quality and high conductivity n-type nitride layer and thereby, a high efficiency and high re¬ liability nitride optoelectronic device. Brief Description of the Drawings
[20] Further objects and advantages of the invention can be more fully understood from the following detailed description taken in conjunction with the accompanying drawings in which:
[21] Fig. 1 is a view for explanation of US PAT NO. 6,472,689 as a prior art;
[22] Fig. 2 is a view for explanation of an embodiment according to the present invention; and
[23] Fig. 3 is a view for explanation of another embodiment according to the present invention. Mode for the Invention
[24] Now, the present invention will be described in further detail through the following examples.
[25] Embodiment 1
[26] As shown in Fig. 2, a buffer layer 20 is grown on a substrate 10 and an n-type nitride layer 40 is grown on a undoped GaN layer 30. The n-type nitride layer 40 has the following construction. An n-type doped In(x)Ga(l-x)N (0<x<l) layer 41 and an undoped GaN layer 42 are alternately grown to form a cycle. The average conductivity of the cycle is controlled by adjusting the concentration and thickness of the n-type doped In(x)Ga(l-x)N (0<x<l) layer 41 and the thickness of the undoped GaN layer 42. The number of the cycle is adjusted to determine the total thickness of the n-type semi¬ conductor layer. The n-type doped In(x)Ga(l-x)N (0<x<l) layer 41 is grown at 800 to 950°C and the undoped GaN layer 42 is grown at 950 to 1100°C.
[27] By this procedure, the n-type doped In(x)Ga(l-x)N (0<x<l) layer 41 serves to supply electrons to the undoped GaN layer 42 and the undoped GaN layer 42 serves to recover the deteriorated layer quality of the highly doped In(x)Ga(l-x)N (0<x<l) layer 41.
[28] Therefore, a thick, high concentration and high quality n-type nitride layer 40 may be obtained.
[29] Embodiment 2
[30] As shown in Fig. 3, a buffer layer 20 is grown on a substrate 10 and an n-type nitride layer 40 is grown on a undoped GaN layer 30. The n-type nitride layer 40 has the following construction. A delta-doping with an n-type dopant 43 is performed between two undoped GaN layers 42a and 42a to form a cycle. The average con¬ ductivity of the cycle is controlled by adjusting the concentration and time of the delta doping with the n-type dopant 43 and the thickness of the undoped GaN 42a. The number of the cycle is adjusted to determine the total thickness of the n-type semi¬ conductor layer 40.
[31] After the undoped GaN layer 42a is grown, gallium containing gas is cut off. Next, the n-type dopant is introduced to the reactor, and then the undoped GaN layer 42a is grown thereon. Here, the n-type dopant 43 inserted between the undoped GaN layers 42a and 42a functions to supply electrons, thereby forming an n-type conductive layer.
[32] The substrate 10 may be formed of SiC or sapphire, preferably a hetero-substrate of sapphire, though a homo-substrate may be used. [33] The growth of the buffer layer 20 and the undoped GaN 30 is well described in
USA PAT NO. 5,290,393 by Nichia. According to the patent, the Al(x)Ga(l-x)N buffer layer is grown at 200 to 900°C and the Al(x)Ga(l-x)N layer is grown at 900 to
1150°C. [34] Meanwhile, US PAT No. 4,855,249 discloses a method of growing a buffer layer of
AlN. This low temperature buffer layer growth is well known to the art. [35] Korean Patent Application Nos. 2003-52936, 2003-85334, and 2004-46349 by the present inventors disclose methods for growing a buffer layer of SiC or SiCN. These buffer layers may be used in the present invention. [36] According to the present invention, the deposition sequence of the doped layer and the undoped layer can be changed and the first layer and the last layer should not be a pair when they are deposited alternately.

Claims

Claims
[1] A method of controlling the conductivity of an n-type nitride layer of a GaN- based semiconductor light-emitting device, wherein the n-type nitride layer is formed by alternately depositing an n-type doped In(x)Ga(l-x)N (0<x<l) layer and an undoped GaN layer and the conductivity of the n-type nitride layer is controlled by adjusting the ratios in concentration and thickness between the n- type doped In(x)Ga(l-x)N (0<x<l) layer and the undoped GaN layer.
[2] The method of controlling the conductivity of an n-type nitride layer of a GaN- based semiconductor light-emitting device of claim 1, wherein the n-type doped In(x)Ga(l-x)N (0<x<l) layer has an electron concentration of 10 /cm to 10 / cm3.
[3] The method of controlling the conductivity of an n-type nitride layer of a GaN- based semiconductor light-emitting device of claim 1, wherein the n-type doped In(x)Ga(l-x)N (0<x<l) layer has a thickness of lnm to 20nm.
[4] The method of controlling the conductivity of an n-type nitride layer of a GaN- based semiconductor light-emitting device of claim 1, wherein the undoped GaN layer has a base concentration of 1014/cm3 to 1017/cm3.
[5] The method of controlling the conductivity of an n-type nitride layer of a GaN- based semiconductor light-emitting device of claim 1, wherein the undoped GaN layer has a thickness of lnm to 20nm.
[6] The method of controlling the conductivity of an n-type nitride layer of a GaN- based semiconductor light-emitting device of claim 1, wherein a pair of the In(x)Ga(l-x)N (0<x<l) layer and the undoped GaN layer has a thickness of 2nm to 40nm.
[7] The method of controlling the conductivity of an n-type nitride layer of a GaN- based semiconductor light-emitting device of claim 1, wherein the n-type nitride layer has a total thickness of 20nm to 5um.
[8] The method of controlling the conductivity of an n-type nitride layer of a GaN- based semiconductor light-emitting device of claim 1, wherein the n-type dopant is at least one selected from Si, In and Sn.
[9] A method of controlling the conductivity of an n-type nitride layer of a GaN- based semiconductor light-emitting device, wherein the n-type nitride layer is formed by repeatedly depositing an undoped GaN layer delta-doped with an n- type dopant and the conductivity of the n-type nitride layer is controlled by adjusting the concentration and time of the delta doping and the thickness of the undoped GaN.
[10] The method of controlling the conductivity of an n-type nitride layer of a GaN- based semiconductor light-emitting device of claim 9, wherein in the delta- doping with an n-type dopant, the electron concentration is within a range from lθ"/cm3 to 1022/cm3.
[11] The method of controlling the conductivity of an n-type nitride layer of a GaN- based semiconductor light-emitting device of claim 9, wherein in the delta- doping with an n-type dopant, the doping time is within a range from 0.1 sec to 120 sec.
[12] The method of controlling the conductivity of an n-type nitride layer of a GaN- based semiconductor light-emitting device of claim 9, wherein the undoped GaN layer has a base concentration of from 1014/cm3 to 1017/cm3.
[13] The method of controlling the conductivity of an n-type nitride layer of a GaN- based semiconductor light-emitting device of claim 9, wherein the n-type nitride layer has a total thickness of 20nm to 5um.
[14] The method of controlling the conductivity of an n-type nitride layer of a GaN- based semiconductor light-emitting device of claim 9, wherein the n-type dopant is at least one selected from Si, In and Sn.
PCT/KR2005/002287 2004-07-19 2005-07-16 Method of controlling the conductivity of n-type nitride semiconductor layer WO2006009372A1 (en)

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EP2045845A2 (en) 2007-10-02 2009-04-08 Epivalley Co., Ltd. III-nitride semiconductor light emitting device
US8692269B2 (en) 2007-04-23 2014-04-08 Lg Innotek Co., Ltd. Light emitting device
CN105023981A (en) * 2014-04-25 2015-11-04 首尔伟傲世有限公司 Light emitting device
WO2019038202A1 (en) * 2017-08-24 2019-02-28 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor body, and method for producing same

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KR100714629B1 (en) * 2006-03-17 2007-05-07 삼성전기주식회사 Nitride semiconductor single crystal substrate, and methods of fabricating the same and a vertical nitride semiconductor light emitting diode using the same
KR100891827B1 (en) * 2006-11-29 2009-04-07 삼성전기주식회사 Vertical nitride semiconductor light emitting device and manufacturing method of the same
KR102391513B1 (en) 2015-10-05 2022-04-27 삼성전자주식회사 Material layer stack, light emitting device, light emitting package, and method of fabricating the light emitting device

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WO2019038202A1 (en) * 2017-08-24 2019-02-28 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor body, and method for producing same

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