JP2000082661A - 加熱装置，加熱装置の評価法及びパタ―ン形成方法 - Google Patents

加熱装置，加熱装置の評価法及びパタ―ン形成方法

Info

Publication number
JP2000082661A
JP2000082661A JP11081635A JP8163599A JP2000082661A JP 2000082661 A JP2000082661 A JP 2000082661A JP 11081635 A JP11081635 A JP 11081635A JP 8163599 A JP8163599 A JP 8163599A JP 2000082661 A JP2000082661 A JP 2000082661A
Authority
JP
Japan
Prior art keywords
heating
exposure
film thickness
resist
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11081635A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000082661A5 (enExample
Inventor
Kei Hayazaki
圭 早崎
Shinichi Ito
信一 伊藤
Kenji Kawano
健二 川野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP11081635A priority Critical patent/JP2000082661A/ja
Priority to KR1019990025571A priority patent/KR100334301B1/ko
Priority to US09/345,749 priority patent/US6191397B1/en
Publication of JP2000082661A publication Critical patent/JP2000082661A/ja
Priority to US09/734,924 priority patent/US6441351B2/en
Priority to US10/189,480 priority patent/US6603101B2/en
Priority to US10/611,345 priority patent/US6831258B2/en
Publication of JP2000082661A5 publication Critical patent/JP2000082661A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP11081635A 1998-07-02 1999-03-25 加熱装置，加熱装置の評価法及びパタ―ン形成方法 Pending JP2000082661A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP11081635A JP2000082661A (ja) 1998-07-02 1999-03-25 加熱装置，加熱装置の評価法及びパタ―ン形成方法
KR1019990025571A KR100334301B1 (ko) 1998-07-02 1999-06-30 가열 장치, 가열 장치의 평가법 및 패턴 형성 방법
US09/345,749 US6191397B1 (en) 1998-07-02 1999-07-01 Heating device, method for evaluating heating device and pattern forming method
US09/734,924 US6441351B2 (en) 1998-07-02 2000-12-13 Heating device, method for evaluating heating device and pattern forming method
US10/189,480 US6603101B2 (en) 1998-07-02 2002-07-08 Heating device, method for evaluating heating device and pattern forming method
US10/611,345 US6831258B2 (en) 1998-07-02 2003-06-30 Heating device, method for evaluating heating device and pattern forming method

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP10-187626 1998-07-02
JP18762698 1998-07-02
JP11081635A JP2000082661A (ja) 1998-07-02 1999-03-25 加熱装置，加熱装置の評価法及びパタ―ン形成方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008157116A Division JP4734376B2 (ja) 1998-07-02 2008-06-16 加熱装置の評価方法とパターン形成方法及び加熱装置の制御方法

Publications (2)

Publication Number Publication Date
JP2000082661A true JP2000082661A (ja) 2000-03-21
JP2000082661A5 JP2000082661A5 (enExample) 2005-08-25

Family

ID=26422639

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11081635A Pending JP2000082661A (ja) 1998-07-02 1999-03-25 加熱装置，加熱装置の評価法及びパタ―ン形成方法

Country Status (3)

Country Link
US (4) US6191397B1 (enExample)
JP (1) JP2000082661A (enExample)
KR (1) KR100334301B1 (enExample)

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JP2003532306A (ja) * 2000-05-04 2003-10-28 ケーエルエー・テンコール・テクノロジーズ・コーポレーション リソグラフィ・プロセス制御のための方法およびシステム
JP2005303093A (ja) * 2004-04-13 2005-10-27 Hoya Corp 熱処理評価方法及び現像処理評価方法
US7009148B2 (en) 2002-10-11 2006-03-07 Kabushiki Kaisha Toshiba Method of processing a substrate, heating apparatus, and method of forming a pattern
WO2006087955A1 (ja) * 2005-02-15 2006-08-24 Tokyo Electron Limited 熱処理板の温度設定方法，熱処理板の温度設定装置，プログラム及びプログラムを記録したコンピュータ読み取り可能な記録媒体
JP2008172111A (ja) * 2007-01-15 2008-07-24 Tokyo Electron Ltd リフロー処理装置およびリフロー処理方法
JP2012038970A (ja) * 2010-08-09 2012-02-23 Tokyo Electron Ltd 熱処理方法及びその熱処理方法を実行させるためのプログラムを記録した記録媒体並びに熱処理装置

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JP4127664B2 (ja) * 2003-06-30 2008-07-30 株式会社東芝 現像処理装置の調整方法
JP4618705B2 (ja) * 2003-09-18 2011-01-26 大日本スクリーン製造株式会社 熱処理装置
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JP2003532306A (ja) * 2000-05-04 2003-10-28 ケーエルエー・テンコール・テクノロジーズ・コーポレーション リソグラフィ・プロセス制御のための方法およびシステム
JP2012169638A (ja) * 2000-05-04 2012-09-06 Kla-Encor Corp リソグラフィ・プロセス制御のための方法およびシステム
JP2012009890A (ja) * 2000-05-04 2012-01-12 Kla-Encor Corp リソグラフィ・プロセス制御のための方法およびシステム
US7009148B2 (en) 2002-10-11 2006-03-07 Kabushiki Kaisha Toshiba Method of processing a substrate, heating apparatus, and method of forming a pattern
US7294586B2 (en) 2002-10-11 2007-11-13 Kabushiki Kaisha Toshiba Method of processing a substrate, heating apparatus, and method of forming a pattern
JP2005303093A (ja) * 2004-04-13 2005-10-27 Hoya Corp 熱処理評価方法及び現像処理評価方法
KR101087932B1 (ko) 2005-02-15 2011-11-28 도쿄엘렉트론가부시키가이샤 열처리판의 온도 설정 방법 및 열처리판의 온도 설정 장치
US7902485B2 (en) 2005-02-15 2011-03-08 Tokyo Electron Limited Temperature setting method of thermal processing plate, temperature setting apparatus of thermal processing plate, program, and computer-readable recording medium recording program thereon
KR101068596B1 (ko) 2005-02-15 2011-09-30 도쿄엘렉트론가부시키가이샤 열처리판의 온도 설정 방법, 열처리판의 온도 설정 장치 및 프로그램을 기록한 컴퓨터 판독 가능한 기록 매체
JP2006228816A (ja) * 2005-02-15 2006-08-31 Tokyo Electron Ltd 熱処理板の温度設定方法，熱処理板の温度設定装置，プログラム及びプログラムを記録したコンピュータ読み取り可能な記録媒体
WO2006087955A1 (ja) * 2005-02-15 2006-08-24 Tokyo Electron Limited 熱処理板の温度設定方法，熱処理板の温度設定装置，プログラム及びプログラムを記録したコンピュータ読み取り可能な記録媒体
JP2008172111A (ja) * 2007-01-15 2008-07-24 Tokyo Electron Ltd リフロー処理装置およびリフロー処理方法
JP2012038970A (ja) * 2010-08-09 2012-02-23 Tokyo Electron Ltd 熱処理方法及びその熱処理方法を実行させるためのプログラムを記録した記録媒体並びに熱処理装置

Also Published As

Publication number Publication date
US6441351B2 (en) 2002-08-27
US20020170907A1 (en) 2002-11-21
US6831258B2 (en) 2004-12-14
KR100334301B1 (ko) 2002-05-03
US20040089651A1 (en) 2004-05-13
KR20000011356A (ko) 2000-02-25
US20010001463A1 (en) 2001-05-24
US6191397B1 (en) 2001-02-20
US6603101B2 (en) 2003-08-05

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