KR100334301B1 - 가열 장치, 가열 장치의 평가법 및 패턴 형성 방법 - Google Patents

가열 장치, 가열 장치의 평가법 및 패턴 형성 방법 Download PDF

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Publication number
KR100334301B1
KR100334301B1 KR1019990025571A KR19990025571A KR100334301B1 KR 100334301 B1 KR100334301 B1 KR 100334301B1 KR 1019990025571 A KR1019990025571 A KR 1019990025571A KR 19990025571 A KR19990025571 A KR 19990025571A KR 100334301 B1 KR100334301 B1 KR 100334301B1
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KR
South Korea
Prior art keywords
heating
exposure
film thickness
amount
film
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Expired - Fee Related
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KR1019990025571A
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English (en)
Korean (ko)
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KR20000011356A (ko
Inventor
하야사끼게이
이또신이찌
가와노겐지
Original Assignee
니시무로 타이죠
가부시끼가이샤 도시바
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Publication of KR20000011356A publication Critical patent/KR20000011356A/ko
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1019990025571A 1998-07-02 1999-06-30 가열 장치, 가열 장치의 평가법 및 패턴 형성 방법 Expired - Fee Related KR100334301B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP18762698 1998-07-02
JP1998-187626 1998-07-02
JP1999-081635 1999-03-25
JP11081635A JP2000082661A (ja) 1998-07-02 1999-03-25 加熱装置，加熱装置の評価法及びパタ―ン形成方法

Publications (2)

Publication Number Publication Date
KR20000011356A KR20000011356A (ko) 2000-02-25
KR100334301B1 true KR100334301B1 (ko) 2002-05-03

Family

ID=26422639

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019990025571A Expired - Fee Related KR100334301B1 (ko) 1998-07-02 1999-06-30 가열 장치, 가열 장치의 평가법 및 패턴 형성 방법

Country Status (3)

Country Link
US (4) US6191397B1 (enExample)
JP (1) JP2000082661A (enExample)
KR (1) KR100334301B1 (enExample)

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US6335152B1 (en) * 2000-05-01 2002-01-01 Advanced Micro Devices, Inc. Use of RTA furnace for photoresist baking
JP2003532306A (ja) * 2000-05-04 2003-10-28 ケーエルエー・テンコール・テクノロジーズ・コーポレーション リソグラフィ・プロセス制御のための方法およびシステム
JP3869191B2 (ja) 2000-06-30 2007-01-17 株式会社東芝 パターン形成方法
US6573480B1 (en) * 2000-10-24 2003-06-03 Advanced Micro Devices, Inc. Use of thermal flow to remove side lobes
JP3696156B2 (ja) 2000-12-26 2005-09-14 株式会社東芝 塗布膜の加熱装置、レジスト膜の処理方法
US20050220985A1 (en) * 2001-06-19 2005-10-06 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus and substrate processing method
JP2003257834A (ja) * 2002-03-04 2003-09-12 Toshiba Corp 半導体装置の製造方法及び半導体装置の製造装置
US6868302B2 (en) * 2002-03-25 2005-03-15 Dainippon Screen Mfg. Co., Ltd. Thermal processing apparatus
US6863772B2 (en) * 2002-10-09 2005-03-08 Taiwan Semiconductor Manufacturing Co., Ltd Dual-port end point window for plasma etcher
JP2004134674A (ja) 2002-10-11 2004-04-30 Toshiba Corp 基板処理方法、加熱処理装置、パターン形成方法
US7147973B2 (en) * 2003-03-19 2006-12-12 Micron Technology, Inc. Method to recover the exposure sensitivity of chemically amplified resins from post coat delay effect
JP4127664B2 (ja) * 2003-06-30 2008-07-30 株式会社東芝 現像処理装置の調整方法
JP4618705B2 (ja) * 2003-09-18 2011-01-26 大日本スクリーン製造株式会社 熱処理装置
JP4282500B2 (ja) * 2004-01-29 2009-06-24 株式会社東芝 構造検査方法及び半導体装置の製造方法
JP4535242B2 (ja) * 2004-04-13 2010-09-01 Ｈｏｙａ株式会社 熱処理評価方法
US7476490B2 (en) * 2004-06-25 2009-01-13 Asml Netherlands B.V. Method for producing a marker on a substrate, lithographic apparatus and device manufacturing method
JP4509820B2 (ja) 2005-02-15 2010-07-21 東京エレクトロン株式会社 熱処理板の温度設定方法，熱処理板の温度設定装置，プログラム及びプログラムを記録したコンピュータ読み取り可能な記録媒体
US20070163716A1 (en) * 2006-01-19 2007-07-19 Taiwan Semiconductor Manufacturing Co., Ltd. Gas distribution apparatuses and methods for controlling gas distribution apparatuses
US8206996B2 (en) 2006-03-28 2012-06-26 Lam Research Corporation Etch tool process indicator method and apparatus
US7951616B2 (en) * 2006-03-28 2011-05-31 Lam Research Corporation Process for wafer temperature verification in etch tools
KR100867191B1 (ko) * 2006-11-02 2008-11-06 주식회사 유진테크 기판처리장치 및 기판처리방법
JP2008172111A (ja) * 2007-01-15 2008-07-24 Tokyo Electron Ltd リフロー処理装置およびリフロー処理方法
US8157538B2 (en) 2007-07-23 2012-04-17 Emerson Climate Technologies, Inc. Capacity modulation system for compressor and method
US8523427B2 (en) * 2008-02-27 2013-09-03 Analog Devices, Inc. Sensor device with improved sensitivity to temperature variation in a semiconductor substrate
US8150242B2 (en) * 2008-10-31 2012-04-03 Applied Materials, Inc. Use of infrared camera for real-time temperature monitoring and control
WO2010088271A2 (en) * 2009-01-27 2010-08-05 Emerson Climate Technologies, Inc. Unloader system and method for a compressor
JP5174098B2 (ja) * 2010-08-09 2013-04-03 東京エレクトロン株式会社 熱処理方法及びその熱処理方法を実行させるためのプログラムを記録した記録媒体並びに熱処理装置
US9157730B2 (en) * 2012-10-26 2015-10-13 Applied Materials, Inc. PECVD process
TWI839541B (zh) * 2019-07-19 2024-04-21 日商東京威力科創股份有限公司 基板處理裝置及處理條件調整方法
CN117894719B (zh) * 2024-03-14 2024-06-07 合肥晶合集成电路股份有限公司 晶圆加热装置、套刻标记及装置控制方法

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JPH0382017A (ja) * 1989-08-24 1991-04-08 Nec Corp 半導体装置の製造装置
JPH0492444A (ja) * 1990-08-08 1992-03-25 Hitachi Ltd 処理方法および装置
JPH08227881A (ja) * 1995-02-20 1996-09-03 Tokyo Electron Ltd 熱処理装置及びその方法
KR970008451A (ko) * 1995-07-25 1997-02-24 김광호 반도체 제조장치 웨이퍼의 온도측정장치 및 그 방법
JPH1012562A (ja) * 1996-06-19 1998-01-16 Sony Corp ウエハ熱処理装置

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JP3278838B2 (ja) * 1993-04-30 2002-04-30 関西日本電気株式会社 樹脂硬化方法及び装置
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JP4327266B2 (ja) 1997-02-26 2009-09-09 株式会社東芝 パターン寸法評価方法及びパターン形成方法
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US5834785A (en) * 1997-06-06 1998-11-10 Nikon Corporation Method and apparatus to compensate for thermal expansion in a lithographic process
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US6051844A (en) * 1997-08-08 2000-04-18 Au; Henry H. Scanning system for rapid thermal cycle stress/curvature measurement
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JP2000082661A (ja) 1998-07-02 2000-03-21 Toshiba Corp 加熱装置，加熱装置の評価法及びパタ―ン形成方法

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Publication number Priority date Publication date Assignee Title
JPH0382017A (ja) * 1989-08-24 1991-04-08 Nec Corp 半導体装置の製造装置
JPH0492444A (ja) * 1990-08-08 1992-03-25 Hitachi Ltd 処理方法および装置
JPH08227881A (ja) * 1995-02-20 1996-09-03 Tokyo Electron Ltd 熱処理装置及びその方法
KR970008451A (ko) * 1995-07-25 1997-02-24 김광호 반도체 제조장치 웨이퍼의 온도측정장치 및 그 방법
JPH1012562A (ja) * 1996-06-19 1998-01-16 Sony Corp ウエハ熱処理装置

Also Published As

Publication number Publication date
US6191397B1 (en) 2001-02-20
US20020170907A1 (en) 2002-11-21
US6603101B2 (en) 2003-08-05
US20040089651A1 (en) 2004-05-13
KR20000011356A (ko) 2000-02-25
US6831258B2 (en) 2004-12-14
US20010001463A1 (en) 2001-05-24
JP2000082661A (ja) 2000-03-21
US6441351B2 (en) 2002-08-27

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