JP2000031383A5 - - Google Patents

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Publication number
JP2000031383A5
JP2000031383A5 JP1999161144A JP16114499A JP2000031383A5 JP 2000031383 A5 JP2000031383 A5 JP 2000031383A5 JP 1999161144 A JP1999161144 A JP 1999161144A JP 16114499 A JP16114499 A JP 16114499A JP 2000031383 A5 JP2000031383 A5 JP 2000031383A5
Authority
JP
Japan
Prior art keywords
semiconductor circuit
integrated semiconductor
doping
region
circuit according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1999161144A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000031383A (ja
Filing date
Publication date
Priority claimed from DE19825608A external-priority patent/DE19825608C1/de
Application filed filed Critical
Publication of JP2000031383A publication Critical patent/JP2000031383A/ja
Publication of JP2000031383A5 publication Critical patent/JP2000031383A5/ja
Pending legal-status Critical Current

Links

JP11161144A 1998-06-08 1999-06-08 集積半導体回路 Pending JP2000031383A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19825608.6 1998-06-08
DE19825608A DE19825608C1 (de) 1998-06-08 1998-06-08 Integrierte Halbleiterschaltung mit einer Anschlußfläche, die eine fein abgestufte RC-Charakteristik aufweist

Publications (2)

Publication Number Publication Date
JP2000031383A JP2000031383A (ja) 2000-01-28
JP2000031383A5 true JP2000031383A5 (enExample) 2006-03-23

Family

ID=7870322

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11161144A Pending JP2000031383A (ja) 1998-06-08 1999-06-08 集積半導体回路

Country Status (5)

Country Link
EP (1) EP0964450A1 (enExample)
JP (1) JP2000031383A (enExample)
KR (1) KR100648752B1 (enExample)
DE (1) DE19825608C1 (enExample)
TW (1) TW415067B (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5558336B2 (ja) * 2010-12-27 2014-07-23 株式会社東芝 半導体装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3786693T2 (de) * 1986-04-17 1994-02-10 Exar Corp Programmierbarer Kontaktfleck.
JPH04206961A (ja) * 1990-11-30 1992-07-28 Nec Corp 半導体装置
US5218222A (en) * 1992-09-16 1993-06-08 Micron Semiconductor, Inc. Output ESD protection circuit
JPH08195442A (ja) * 1995-01-17 1996-07-30 Sony Corp 半導体集積回路の保護回路
US5637900A (en) * 1995-04-06 1997-06-10 Industrial Technology Research Institute Latchup-free fully-protected CMOS on-chip ESD protection circuit
US5623156A (en) * 1995-09-28 1997-04-22 Cypress Semiconductor Corporation Electrostatic discharge (ESD) protection circuit and structure for output drivers
EP0794570A1 (en) * 1996-03-06 1997-09-10 STMicroelectronics S.r.l. Integrated device with pads
JPH09283525A (ja) * 1996-04-17 1997-10-31 Sanyo Electric Co Ltd 半導体装置
KR100220384B1 (ko) * 1996-10-22 1999-09-15 윤종용 정전기 보호 소자
JPH10270640A (ja) * 1997-03-26 1998-10-09 Mitsubishi Electric Corp 半導体集積回路装置

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