JP2000114536A5 - - Google Patents

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Publication number
JP2000114536A5
JP2000114536A5 JP1998283968A JP28396898A JP2000114536A5 JP 2000114536 A5 JP2000114536 A5 JP 2000114536A5 JP 1998283968 A JP1998283968 A JP 1998283968A JP 28396898 A JP28396898 A JP 28396898A JP 2000114536 A5 JP2000114536 A5 JP 2000114536A5
Authority
JP
Japan
Prior art keywords
gate electrode
semiconductor device
soi semiconductor
wide portion
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1998283968A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000114536A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP10283968A priority Critical patent/JP2000114536A/ja
Priority claimed from JP10283968A external-priority patent/JP2000114536A/ja
Publication of JP2000114536A publication Critical patent/JP2000114536A/ja
Publication of JP2000114536A5 publication Critical patent/JP2000114536A5/ja
Pending legal-status Critical Current

Links

JP10283968A 1998-10-06 1998-10-06 Ｓｏｉ半導体デバイス Pending JP2000114536A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10283968A JP2000114536A (ja) 1998-10-06 1998-10-06 Ｓｏｉ半導体デバイス

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10283968A JP2000114536A (ja) 1998-10-06 1998-10-06 Ｓｏｉ半導体デバイス

Publications (2)

Publication Number Publication Date
JP2000114536A JP2000114536A (ja) 2000-04-21
JP2000114536A5 true JP2000114536A5 (enExample) 2005-11-24

Family

ID=17672574

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10283968A Pending JP2000114536A (ja) 1998-10-06 1998-10-06 Ｓｏｉ半導体デバイス

Country Status (1)

Country Link
JP (1) JP2000114536A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020096684A (ko) * 2001-06-21 2002-12-31 주식회사 하이닉스반도체 트랜지스터의 게이트 라인 구조
JP2005101494A (ja) 2003-09-01 2005-04-14 Seiko Epson Corp 半導体装置及びそれを用いた半導体記憶装置
JP2005317851A (ja) * 2004-04-30 2005-11-10 Toshiba Matsushita Display Technology Co Ltd 薄膜トランジスタおよびその製造方法
JP5555864B2 (ja) * 2009-12-22 2014-07-23 株式会社ブルックマンテクノロジ 絶縁ゲート型半導体素子及び絶縁ゲート型半導体集積回路

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