JP2000114536A - Ｓｏｉ半導体デバイス - Google Patents

Ｓｏｉ半導体デバイス

Info

Publication number
JP2000114536A
JP2000114536A JP10283968A JP28396898A JP2000114536A JP 2000114536 A JP2000114536 A JP 2000114536A JP 10283968 A JP10283968 A JP 10283968A JP 28396898 A JP28396898 A JP 28396898A JP 2000114536 A JP2000114536 A JP 2000114536A
Authority
JP
Japan
Prior art keywords
semiconductor device
gate electrode
soi semiconductor
transistor
field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10283968A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000114536A5 (enExample
Inventor
Hiroaki Suzuki
弘明 鈴木
Kimihiro Ueda
公大 上田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10283968A priority Critical patent/JP2000114536A/ja
Publication of JP2000114536A publication Critical patent/JP2000114536A/ja
Publication of JP2000114536A5 publication Critical patent/JP2000114536A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
JP10283968A 1998-10-06 1998-10-06 Ｓｏｉ半導体デバイス Pending JP2000114536A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10283968A JP2000114536A (ja) 1998-10-06 1998-10-06 Ｓｏｉ半導体デバイス

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10283968A JP2000114536A (ja) 1998-10-06 1998-10-06 Ｓｏｉ半導体デバイス

Publications (2)

Publication Number Publication Date
JP2000114536A true JP2000114536A (ja) 2000-04-21
JP2000114536A5 JP2000114536A5 (enExample) 2005-11-24

Family

ID=17672574

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10283968A Pending JP2000114536A (ja) 1998-10-06 1998-10-06 Ｓｏｉ半導体デバイス

Country Status (1)

Country Link
JP (1) JP2000114536A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020096684A (ko) * 2001-06-21 2002-12-31 주식회사 하이닉스반도체 트랜지스터의 게이트 라인 구조
JP2005317851A (ja) * 2004-04-30 2005-11-10 Toshiba Matsushita Display Technology Co Ltd 薄膜トランジスタおよびその製造方法
US7279749B2 (en) 2003-09-01 2007-10-09 Seiko Epson Corporation Semiconductor device and semiconductor memory using the same
JP2011134784A (ja) * 2009-12-22 2011-07-07 Brookman Technology Inc 絶縁ゲート型半導体素子及び絶縁ゲート型半導体集積回路

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020096684A (ko) * 2001-06-21 2002-12-31 주식회사 하이닉스반도체 트랜지스터의 게이트 라인 구조
US7279749B2 (en) 2003-09-01 2007-10-09 Seiko Epson Corporation Semiconductor device and semiconductor memory using the same
JP2005317851A (ja) * 2004-04-30 2005-11-10 Toshiba Matsushita Display Technology Co Ltd 薄膜トランジスタおよびその製造方法
JP2011134784A (ja) * 2009-12-22 2011-07-07 Brookman Technology Inc 絶縁ゲート型半導体素子及び絶縁ゲート型半導体集積回路

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