DE19825608C1 - Integrierte Halbleiterschaltung mit einer Anschlußfläche, die eine fein abgestufte RC-Charakteristik aufweist - Google Patents

Integrierte Halbleiterschaltung mit einer Anschlußfläche, die eine fein abgestufte RC-Charakteristik aufweist

Info

Publication number
DE19825608C1
DE19825608C1 DE19825608A DE19825608A DE19825608C1 DE 19825608 C1 DE19825608 C1 DE 19825608C1 DE 19825608 A DE19825608 A DE 19825608A DE 19825608 A DE19825608 A DE 19825608A DE 19825608 C1 DE19825608 C1 DE 19825608C1
Authority
DE
Germany
Prior art keywords
doping
semiconductor circuit
section
integrated semiconductor
circuit according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE19825608A
Other languages
German (de)
English (en)
Inventor
Dominique Savignac
Robert Feurle
Helmut Schneider
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Polaris Innovations Ltd
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Priority to DE19825608A priority Critical patent/DE19825608C1/de
Priority to TW088104032A priority patent/TW415067B/zh
Priority to EP99106322A priority patent/EP0964450A1/de
Priority to JP11161144A priority patent/JP2000031383A/ja
Priority to KR1019990021092A priority patent/KR100648752B1/ko
Application granted granted Critical
Publication of DE19825608C1 publication Critical patent/DE19825608C1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
DE19825608A 1998-06-08 1998-06-08 Integrierte Halbleiterschaltung mit einer Anschlußfläche, die eine fein abgestufte RC-Charakteristik aufweist Expired - Fee Related DE19825608C1 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
DE19825608A DE19825608C1 (de) 1998-06-08 1998-06-08 Integrierte Halbleiterschaltung mit einer Anschlußfläche, die eine fein abgestufte RC-Charakteristik aufweist
TW088104032A TW415067B (en) 1998-06-08 1999-03-16 Integrated semiconductor-circuit with a connection-area
EP99106322A EP0964450A1 (de) 1998-06-08 1999-03-26 Intergrierte Halbleiterschaltung mit einer Anschlussfläche
JP11161144A JP2000031383A (ja) 1998-06-08 1999-06-08 集積半導体回路
KR1019990021092A KR100648752B1 (ko) 1998-06-08 1999-06-08 접속 영역을 갖는 집적 반도체 회로

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19825608A DE19825608C1 (de) 1998-06-08 1998-06-08 Integrierte Halbleiterschaltung mit einer Anschlußfläche, die eine fein abgestufte RC-Charakteristik aufweist

Publications (1)

Publication Number Publication Date
DE19825608C1 true DE19825608C1 (de) 1999-09-23

Family

ID=7870322

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19825608A Expired - Fee Related DE19825608C1 (de) 1998-06-08 1998-06-08 Integrierte Halbleiterschaltung mit einer Anschlußfläche, die eine fein abgestufte RC-Charakteristik aufweist

Country Status (5)

Country Link
EP (1) EP0964450A1 (enExample)
JP (1) JP2000031383A (enExample)
KR (1) KR100648752B1 (enExample)
DE (1) DE19825608C1 (enExample)
TW (1) TW415067B (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5558336B2 (ja) * 2010-12-27 2014-07-23 株式会社東芝 半導体装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE92211T1 (de) * 1986-04-17 1993-08-15 Exar Corp Programmierbarer kontaktfleck.
JPH04206961A (ja) * 1990-11-30 1992-07-28 Nec Corp 半導体装置
US5218222A (en) * 1992-09-16 1993-06-08 Micron Semiconductor, Inc. Output ESD protection circuit
JPH08195442A (ja) * 1995-01-17 1996-07-30 Sony Corp 半導体集積回路の保護回路
US5637900A (en) * 1995-04-06 1997-06-10 Industrial Technology Research Institute Latchup-free fully-protected CMOS on-chip ESD protection circuit
US5623156A (en) * 1995-09-28 1997-04-22 Cypress Semiconductor Corporation Electrostatic discharge (ESD) protection circuit and structure for output drivers
EP0794570A1 (en) * 1996-03-06 1997-09-10 STMicroelectronics S.r.l. Integrated device with pads
JPH09283525A (ja) * 1996-04-17 1997-10-31 Sanyo Electric Co Ltd 半導体装置
KR100220384B1 (ko) * 1996-10-22 1999-09-15 윤종용 정전기 보호 소자
JPH10270640A (ja) * 1997-03-26 1998-10-09 Mitsubishi Electric Corp 半導体集積回路装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IBM Technical Disclosure Bulletin, Vol. 37, No. 9, Sept. 1994, S. 593-594 *

Also Published As

Publication number Publication date
KR20000005999A (ko) 2000-01-25
TW415067B (en) 2000-12-11
KR100648752B1 (ko) 2006-11-23
EP0964450A1 (de) 1999-12-15
JP2000031383A (ja) 2000-01-28

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Legal Events

Date Code Title Description
8100 Publication of patent without earlier publication of application
D1 Grant (no unexamined application published) patent law 81
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: QIMONDA AG, 81739 MUENCHEN, DE

R081 Change of applicant/patentee

Owner name: POLARIS INNOVATIONS LTD., IE

Free format text: FORMER OWNER: QIMONDA AG, 81739 MUENCHEN, DE

Owner name: INFINEON TECHNOLOGIES AG, DE

Free format text: FORMER OWNER: QIMONDA AG, 81739 MUENCHEN, DE

R081 Change of applicant/patentee

Owner name: POLARIS INNOVATIONS LTD., IE

Free format text: FORMER OWNER: INFINEON TECHNOLOGIES AG, 85579 NEUBIBERG, DE

R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee