JP2000031383A - 集積半導体回路 - Google Patents

集積半導体回路

Info

Publication number
JP2000031383A
JP2000031383A JP11161144A JP16114499A JP2000031383A JP 2000031383 A JP2000031383 A JP 2000031383A JP 11161144 A JP11161144 A JP 11161144A JP 16114499 A JP16114499 A JP 16114499A JP 2000031383 A JP2000031383 A JP 2000031383A
Authority
JP
Japan
Prior art keywords
doping
semiconductor circuit
integrated semiconductor
connection terminal
polysilicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11161144A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000031383A5 (enExample
Inventor
Dominique Savignac
サヴィニャク ドミニク
Robert Feurle
フォイルレ ローベルト
Helmut Schneider
シュナイダー ヘルムート
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of JP2000031383A publication Critical patent/JP2000031383A/ja
Publication of JP2000031383A5 publication Critical patent/JP2000031383A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP11161144A 1998-06-08 1999-06-08 集積半導体回路 Pending JP2000031383A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19825608.6 1998-06-08
DE19825608A DE19825608C1 (de) 1998-06-08 1998-06-08 Integrierte Halbleiterschaltung mit einer Anschlußfläche, die eine fein abgestufte RC-Charakteristik aufweist

Publications (2)

Publication Number Publication Date
JP2000031383A true JP2000031383A (ja) 2000-01-28
JP2000031383A5 JP2000031383A5 (enExample) 2006-03-23

Family

ID=7870322

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11161144A Pending JP2000031383A (ja) 1998-06-08 1999-06-08 集積半導体回路

Country Status (5)

Country Link
EP (1) EP0964450A1 (enExample)
JP (1) JP2000031383A (enExample)
KR (1) KR100648752B1 (enExample)
DE (1) DE19825608C1 (enExample)
TW (1) TW415067B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012138513A (ja) * 2010-12-27 2012-07-19 Toshiba Corp 半導体装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3786693T2 (de) * 1986-04-17 1994-02-10 Exar Corp Programmierbarer Kontaktfleck.
JPH04206961A (ja) * 1990-11-30 1992-07-28 Nec Corp 半導体装置
US5218222A (en) * 1992-09-16 1993-06-08 Micron Semiconductor, Inc. Output ESD protection circuit
JPH08195442A (ja) * 1995-01-17 1996-07-30 Sony Corp 半導体集積回路の保護回路
US5637900A (en) * 1995-04-06 1997-06-10 Industrial Technology Research Institute Latchup-free fully-protected CMOS on-chip ESD protection circuit
US5623156A (en) * 1995-09-28 1997-04-22 Cypress Semiconductor Corporation Electrostatic discharge (ESD) protection circuit and structure for output drivers
EP0794570A1 (en) * 1996-03-06 1997-09-10 STMicroelectronics S.r.l. Integrated device with pads
JPH09283525A (ja) * 1996-04-17 1997-10-31 Sanyo Electric Co Ltd 半導体装置
KR100220384B1 (ko) * 1996-10-22 1999-09-15 윤종용 정전기 보호 소자
JPH10270640A (ja) * 1997-03-26 1998-10-09 Mitsubishi Electric Corp 半導体集積回路装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012138513A (ja) * 2010-12-27 2012-07-19 Toshiba Corp 半導体装置
US8994145B2 (en) 2010-12-27 2015-03-31 Kabushiki Kaisha Toshiba Semiconductor device including capacitor under pad

Also Published As

Publication number Publication date
EP0964450A1 (de) 1999-12-15
TW415067B (en) 2000-12-11
DE19825608C1 (de) 1999-09-23
KR20000005999A (ko) 2000-01-25
KR100648752B1 (ko) 2006-11-23

Similar Documents

Publication Publication Date Title
EP0154998B1 (en) Improved structure of power supply wirings in semiconductor integrated circuit
US20070262383A1 (en) Soi substrate and semiconductor integrated ciruit device
US5739576A (en) Integrated chip multilayer decoupling capacitors
CN100578788C (zh) 由门阵列结构建立集成电路电容的方法和装置
US8188566B2 (en) Semiconductor integrated circuit device
CN106952943A (zh) 包括分接头单元的电路
JP3116916B2 (ja) 回路装置、その製造方法
JPH1084083A (ja) 静電気保護回路を備えた半導体装置
CN101647111A (zh) 电容单元、集成电路、集成电路设计方法以及集成电路制造方法
US6849951B1 (en) Bypass capacitor solution for integrated circuit dice
JP3792931B2 (ja) 半導体装置およびそのテスト方法
JP2000031383A (ja) 集積半導体回路
JP2001028423A (ja) 半導体集積回路装置
JPS63142656A (ja) セミカスタム半導体集積回路
JPH03105968A (ja) 集積回路装置
US6429469B1 (en) Optical Proximity Correction Structures Having Decoupling Capacitors
JP3010911B2 (ja) 半導体装置
JP3441104B2 (ja) 半導体装置
US7473624B2 (en) Method for manufacturing semiconductor device
US7317238B2 (en) Intrinsic decoupling capacitor
JP2522207B2 (ja) 半導体装置
JPH08316323A (ja) 電源配線の形成方法及びそれを用いた回路装置
JPH0566737B2 (enExample)
JP3134443B2 (ja) 半導体入力保護装置
WO2023127385A1 (ja) 半導体集積回路装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060202

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060202

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20080204

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080208

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20080508

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20080513

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080609

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20081024

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20090318